J. Mogab

583 total citations
12 papers, 211 citations indexed

About

J. Mogab is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Instrumentation. According to data from OpenAlex, J. Mogab has authored 12 papers receiving a total of 211 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 1 paper in Mechanics of Materials and 1 paper in Instrumentation. Recurrent topics in J. Mogab's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). J. Mogab is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). J. Mogab collaborates with scholars based in United States and Taiwan. J. Mogab's co-authors include Philip J. Tobin, S. Samavedam, Bich-Yen Nguyen, Ana María Miranda Zavala, J. Schaeffer, B. E. White, R. Gregory, R. Martín, M. V. Raymond and V. Dhandapani and has published in prestigious journals such as IEEE Electron Device Letters, IEEE Transactions on Nanotechnology and Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.

In The Last Decade

J. Mogab

11 papers receiving 196 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Mogab United States	8	209	26	26	20	19	12	211
C. Richard France	7	137 0.7×	14 0.5×	23 0.9×	22 1.1×	13 0.7×	18	150
Tomasz Brożek United States	9	273 1.3×	19 0.7×	48 1.8×	20 1.0×	11 0.6×	76	292
J.D. Hayden United States	9	318 1.5×	29 1.1×	35 1.3×	17 0.8×	19 1.0×	34	326
C.D. Gunderson United States	6	237 1.1×	46 1.8×	28 1.1×	16 0.8×	13 0.7×	18	242
A. Bajolet France	10	280 1.3×	19 0.7×	23 0.9×	8 0.4×	21 1.1×	19	288
Seiji Inumiya Japan	9	286 1.4×	43 1.7×	42 1.6×	26 1.3×	17 0.9×	47	302
A. Upham United States	5	89 0.4×	9 0.3×	21 0.8×	51 2.5×	16 0.8×	6	106
C. Arvet France	10	223 1.1×	23 0.9×	44 1.7×	16 0.8×	61 3.2×	28	230
S. Siddiqui United States	7	137 0.7×	22 0.8×	31 1.2×	12 0.6×	38 2.0×	18	151
H. Katto Japan	10	255 1.2×	36 1.4×	19 0.7×	8 0.4×	19 1.0×	34	262

Countries citing papers authored by J. Mogab

Since Specialization

Citations

This map shows the geographic impact of J. Mogab's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Mogab with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Mogab more than expected).

Fields of papers citing papers by J. Mogab

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Mogab. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Mogab. The network helps show where J. Mogab may publish in the future.

Co-authorship network of co-authors of J. Mogab

This figure shows the co-authorship network connecting the top 25 collaborators of J. Mogab. A scholar is included among the top collaborators of J. Mogab based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Mogab. J. Mogab is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Burnett, David C., et al.. (2006). Moderately doped channel multiple-finFET for logic applications. 976–979. 5 indexed citations

Thean, Aaron, L. Prabhu, Victor Vartanian, et al.. (2006). Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations.. 51. 509–512. 16 indexed citations

Vandooren, A., L. Mathew, T. White, et al.. (2003). Fully-depleted SOI devices with TaSiN gate, HfO₂ gate dielectric, and elevated source/drain extensions. IEEE Electron Device Letters. 24(5). 342–344. 24 indexed citations

Vandooren, A., Ana María Miranda Zavala, L. Mathew, et al.. (2003). 50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate. IEEE Transactions on Nanotechnology. 2(4). 324–328. 11 indexed citations

Thean, Aaron, T. White, Zhu-Pei Shi, et al.. (2003). Computer aided design of sub-100 nm strained-Si/Si/sub 1-x/Ge/sub x/ NMOSFET through integrated process and device simulations. 195–198. 1 indexed citations

Csutak, S.M., J. Mogab, Joe C. Campbell, S. Wang, & J.D. Schaub. (2003). Integrated silicon optical receiver with avalanche photodiode. IEE Proceedings - Optoelectronics. 150(3). 235–237. 14 indexed citations

Maiti, B., Philip J. Tobin, Chris Hobbs, et al.. (2002). PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology. 781–784. 13 indexed citations

Cheng, Baolei, B. Maiti, S. Samavedam, et al.. (2002). Metal gates for advanced sub-80-nm SOI CMOS technology. 91–92. 22 indexed citations

Schaeffer, J., S. Samavedam, D. C. Gilmer, et al.. (2002). Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(1). 11–17. 85 indexed citations

10.

Samavedam, S., J. Schaeffer, D. C. Gilmer, et al.. (2002). Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO₂ Gate Dielectric. MRS Proceedings. 716. 4 indexed citations

11.

Tseng, H.‐H., Pei-Ling Tsui, P.J. Tobin, et al.. (2002). Application of JVD nitride gate dielectric to a 0.35 micron CMOS process for reduction of gate leakage current and boron penetration. 2058. 647–650. 5 indexed citations

12.

Maiti, B., Daniel Connelly, Fanghao Huang, et al.. (1999). 0.18 /spl mu/m metal gate fully-depleted SOI MOSFETs for advanced CMOS applications. 25–26. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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