Shun-ichiro Ohmi

1.6k total citations
145 papers, 1.3k citations indexed

About

Shun-ichiro Ohmi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Shun-ichiro Ohmi has authored 145 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 127 papers in Electrical and Electronic Engineering, 43 papers in Materials Chemistry and 34 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Shun-ichiro Ohmi's work include Semiconductor materials and devices (111 papers), Ferroelectric and Negative Capacitance Devices (38 papers) and Advancements in Semiconductor Devices and Circuit Design (38 papers). Shun-ichiro Ohmi is often cited by papers focused on Semiconductor materials and devices (111 papers), Ferroelectric and Negative Capacitance Devices (38 papers) and Advancements in Semiconductor Devices and Circuit Design (38 papers). Shun-ichiro Ohmi collaborates with scholars based in Japan, United States and South Korea. Shun-ichiro Ohmi's co-authors include Hiroshi Iwai, T. Ohguro, Kazuo Tsutsui, R. T. Tung, Hiroshi Ishiwara, Jun Gao, Dae Hee Han, Hiroshi Nohira, Min Liao and Takanori Hattori and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Shun-ichiro Ohmi

137 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shun-ichiro Ohmi Japan 16 1.1k 420 411 119 92 145 1.3k
Takayuki Aoyama Japan 17 907 0.8× 234 0.6× 328 0.8× 106 0.9× 49 0.5× 145 1.1k
A. See Singapore 18 726 0.6× 270 0.6× 326 0.8× 106 0.9× 93 1.0× 74 873
Tsu-Jae King United States 12 1.2k 1.0× 273 0.7× 315 0.8× 154 1.3× 72 0.8× 23 1.3k
K. Cherkaoui Ireland 24 1.7k 1.5× 571 1.4× 597 1.5× 185 1.6× 119 1.3× 128 1.8k
S. Koveshnikov United States 16 916 0.8× 365 0.9× 250 0.6× 68 0.6× 42 0.5× 83 1.0k
Mau‐Phon Houng Taiwan 17 580 0.5× 224 0.5× 379 0.9× 113 0.9× 152 1.7× 76 781
R. Gregory United States 18 988 0.9× 164 0.4× 542 1.3× 60 0.5× 162 1.8× 46 1.1k
Howard R. Huff United States 19 1.1k 1.0× 201 0.5× 347 0.8× 109 0.9× 80 0.9× 92 1.2k
S. Samavedam United States 18 1.2k 1.1× 199 0.5× 357 0.9× 49 0.4× 98 1.1× 36 1.3k
Radek Roucka United States 21 1.4k 1.2× 734 1.7× 422 1.0× 434 3.6× 43 0.5× 55 1.6k

Countries citing papers authored by Shun-ichiro Ohmi

Since Specialization
Citations

This map shows the geographic impact of Shun-ichiro Ohmi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shun-ichiro Ohmi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shun-ichiro Ohmi more than expected).

Fields of papers citing papers by Shun-ichiro Ohmi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shun-ichiro Ohmi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shun-ichiro Ohmi. The network helps show where Shun-ichiro Ohmi may publish in the future.

Co-authorship network of co-authors of Shun-ichiro Ohmi

This figure shows the co-authorship network connecting the top 25 collaborators of Shun-ichiro Ohmi. A scholar is included among the top collaborators of Shun-ichiro Ohmi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shun-ichiro Ohmi. Shun-ichiro Ohmi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ohmi, Shun-ichiro, et al.. (2025). Dependence of ferroelectric characteristics on the crystallinity of HfN thin film formed on Si(100) by a two-step deposition method. Japanese Journal of Applied Physics. 64(10). 10SP10–10SP10.
2.
Ohmi, Shun-ichiro, et al.. (2024). Kr-Plasma Process for Conductance Control of MFSFET With FeND-HfO₂ Gate Insulator. IEEE Journal of the Electron Devices Society. 12. 775–778. 1 indexed citations
3.
Ohmi, Shun-ichiro. (2024). Digital/Analog-Operation of Hf-Based FeNOS Nonvolatile Memory Utilizing Ferroelectric Nondoped HfO<sub>2</sub> Blocking Layer. IEICE Transactions on Electronics. E107.C(9). 232–236. 1 indexed citations
4.
Shin, Joong‐Won, et al.. (2023). Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO<sub>2</sub> Gate Insulator for Analog Memory Application. IEICE Transactions on Electronics. E106.C(10). 581–587. 3 indexed citations
5.
Ohmi, Shun-ichiro, et al.. (2023). Effect of SiO2 Interfacial Layer Reduction on MFSFET With 5 nm-Thick Ferroelectric Nondoped HfO2 by Deposition Rate Control. IEEE Transactions on Semiconductor Manufacturing. 36(4). 553–557. 5 indexed citations
6.
7.
Ohmi, Shun-ichiro, et al.. (2021). N 2 gas flow rate dependence on the high- k LaB x N y thin film characteristics formed by RF sputtering for floating-gate memory applications. Japanese Journal of Applied Physics. 60(SB). SBBK12–SBBK12. 2 indexed citations
8.
Ohmi, Shun-ichiro, et al.. (2021). HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory. Japanese Journal of Applied Physics. 60(SB). SBBB03–SBBB03. 3 indexed citations
9.
Morita, Hiroki, et al.. (2021). Investigation of the HfON Tunneling Layer of MONOS Device for Low-Voltage and High-Speed Operation Nonvolatile Memory Application. IEEE Transactions on Semiconductor Manufacturing. 34(3). 323–327. 2 indexed citations
10.
Ohmi, Shun-ichiro, et al.. (2021). Effect of Kr/O2-Plasma Reactive Sputtering on Ferroelectric Nondoped HfO₂ Formation for MFSFET With Pt Gate Electrode. IEEE Transactions on Electron Devices. 68(5). 2427–2433. 14 indexed citations
11.
Ohmi, Shun-ichiro, et al.. (2021). Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate. IEEE Journal of the Electron Devices Society. 9. 1036–1040. 3 indexed citations
12.
Mimura, Takanori, Yuta Nakamura, Takao Shimizu, et al.. (2020). Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance. 1–4. 3 indexed citations
13.
14.
Ohmi, Shun-ichiro, et al.. (2019). The influence of Hf interlayers for ferroelectric non-doped HfO 2 with suppressing the interfacial layer formation. Japanese Journal of Applied Physics. 58(SI). SIIB16–SIIB16. 7 indexed citations
15.
Ohmi, Shun-ichiro, et al.. (2018). Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory. 1–2. 1 indexed citations
16.
17.
Ohmi, Shun-ichiro, et al.. (2015). Investigation of stacked HfN gate insulator formed by ECR plasma sputtering (シリコン材料・デバイス). IEICE technical report. Speech. 115(280). 57–62. 1 indexed citations
18.
Ohmi, Shun-ichiro, et al.. (2009). Electrical characteristics of OFETs with thin gate dielectric. 109(97). 59–62. 1 indexed citations
19.
Ohmi, Shun-ichiro, et al.. (2009). Investigation of characteristics of pentacene-based MOSFETs structures. 109(257). 43–46. 1 indexed citations
20.
Ohmi, Shun-ichiro, et al.. (2004). Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100). IEICE Transactions on Electronics. 87(1). 24–29. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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