N. V. Edwards

1.1k total citations
46 papers, 877 citations indexed

About

N. V. Edwards is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. V. Edwards has authored 46 papers receiving a total of 877 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 19 papers in Condensed Matter Physics and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. V. Edwards's work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (16 papers) and Semiconductor Quantum Structures and Devices (11 papers). N. V. Edwards is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (16 papers) and Semiconductor Quantum Structures and Devices (11 papers). N. V. Edwards collaborates with scholars based in United States, Sweden and Germany. N. V. Edwards's co-authors include Theodore E. Madey, D. E. Aspnes, M. D. Bremser, R. F. Davis, N. S. Faradzhev, B. V. Yakshinskiy, S. Bajt, N.R. Parikh, T. W. Weeks and J. Kulik and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. V. Edwards

46 papers receiving 838 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. V. Edwards United States 14 582 317 279 176 169 46 877
P. Specht United States 18 515 0.9× 390 1.2× 269 1.0× 135 0.8× 568 3.4× 61 975
R. N. Kyutt Russia 13 337 0.6× 412 1.3× 276 1.0× 145 0.8× 280 1.7× 95 738
Thorsten Mehrtens Germany 16 265 0.5× 237 0.7× 207 0.7× 128 0.7× 257 1.5× 43 741
Fredrik Owman Sweden 14 767 1.3× 479 1.5× 112 0.4× 212 1.2× 379 2.2× 15 1.1k
J. Massies France 15 372 0.6× 350 1.1× 557 2.0× 285 1.6× 541 3.2× 36 964
M. Hanke Germany 19 513 0.9× 633 2.0× 215 0.8× 257 1.5× 632 3.7× 85 1.2k
B. D. Hunt United States 20 421 0.7× 339 1.1× 713 2.6× 276 1.6× 513 3.0× 61 1.2k
R. M. Biefeld United States 18 700 1.2× 360 1.1× 436 1.6× 205 1.2× 597 3.5× 49 1.1k
B. W. Hussey United States 18 318 0.5× 481 1.5× 510 1.8× 207 1.2× 220 1.3× 33 1.0k
M. Baeumler Germany 17 585 1.0× 377 1.2× 490 1.8× 247 1.4× 495 2.9× 64 1.1k

Countries citing papers authored by N. V. Edwards

Since Specialization
Citations

This map shows the geographic impact of N. V. Edwards's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. V. Edwards with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. V. Edwards more than expected).

Fields of papers citing papers by N. V. Edwards

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. V. Edwards. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. V. Edwards. The network helps show where N. V. Edwards may publish in the future.

Co-authorship network of co-authors of N. V. Edwards

This figure shows the co-authorship network connecting the top 25 collaborators of N. V. Edwards. A scholar is included among the top collaborators of N. V. Edwards based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. V. Edwards. N. V. Edwards is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bajt, S., N. V. Edwards, & Theodore E. Madey. (2007). Properties of ultrathin films appropriate for optics capping layers exposed to high energy photon irradiation. Surface Science Reports. 63(2). 73–99. 60 indexed citations
2.
Ermanoski, Ivan, Steven Grantham, T. B. Lucatorto, et al.. (2006). EUV testing of multilayer mirrors: critical issues. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6151. 61510F–61510F. 7 indexed citations
3.
Clift, W. Miles, Leonard E. Klebanoff, C. Tarrio, et al.. (2004). Scaling studies of capping layer oxidation by water exposure with EUV radiation and electrons. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5374. 666–666. 11 indexed citations
4.
Anderson, R. J., et al.. (2004). The erosion of materials exposed to a laser-pulsed-plasma (LPP) extreme ultraviolet (EUV) illumination source. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5374. 710–710. 13 indexed citations
5.
Edwards, N. V., D. Roan, R. Gregory, et al.. (2003). HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium. Journal of The Electrochemical Society. 150(4). F67–F67. 53 indexed citations
6.
Thomas, Shawn, Robert E. Jones, R. Thomä, et al.. (2003). Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition. Journal of Electronic Materials. 32(9). 976–980. 33 indexed citations
7.
Edwards, N. V., et al.. (2002). Integration of Anti-reflection Coatings on EUV Absorber Stacks. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4889. 382–382. 1 indexed citations
8.
Wang, Xiangdong, J. Kulik, N. V. Edwards, S. Samavedam, & Shi-Feng Lu. (2002). Characterization of High-k Dielectric Films with Tunneling AFM. MRS Proceedings. 738. 3 indexed citations
9.
Позина, Г., N. V. Edwards, J. P. Bergman, et al.. (2001). Time-Resolved Photoluminescence in Strained GaN Layers. physica status solidi (a). 183(1). 151–155. 5 indexed citations
10.
Позина, Г., N. V. Edwards, J. P. Bergman, et al.. (2001). Time-resolved spectroscopy of strained GaN/AlN/6H–SiC heterostructures grown by metalorganic chemical vapor deposition. Applied Physics Letters. 78(8). 1062–1064. 11 indexed citations
11.
Järrendahl, Kenneth, S. Peters, J.‐T. Zettler, et al.. (2001). Ordinary and extraordinary dielectric functions of 4H– and 6H–SiC from 3.5 to 9.0 eV. Applied Physics Letters. 78(18). 2715–2717. 21 indexed citations
12.
Vella, Joseph B., et al.. (2001). Mechanical Properties and Porosity of Organo-Silicate Glass (OSG) Low-k Dielectric Films. MRS Proceedings. 695. 3 indexed citations
13.
Cobet, Christoph, K. Wilmers, T. Wethkamp, et al.. (2000). Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV. Thin Solid Films. 364(1-2). 111–113. 24 indexed citations
14.
Yoo, Seunghyun, N. V. Edwards, & D. E. Aspnes. (1998). Analysis of optical spectra by Fourier methods. Thin Solid Films. 313-314. 143–148. 6 indexed citations
15.
Edwards, N. V., Seunghyun Yoo, M. D. Bremser, et al.. (1998). Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films. Thin Solid Films. 313-314. 187–192. 6 indexed citations
16.
Edwards, N. V., Seunghyun Yoo, M. D. Bremser, et al.. (1997). Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films. Materials Science and Engineering B. 50(1-3). 134–141. 3 indexed citations
17.
Edwards, N. V., Seunghyun Yoo, M. D. Bremser, et al.. (1997). Variation of GaN valence bands with biaxial stress and quantification of residual stress. Applied Physics Letters. 70(15). 2001–2003. 38 indexed citations
18.
Bremser, M. D., W. G. Perry, Tsvetanka Zheleva, et al.. (1996). Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates. MRS Internet Journal of Nitride Semiconductor Research. 1. 85 indexed citations
19.
Edwards, N. V., Seunghyun Yoo, M. D. Bremser, et al.. (1996). Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters. MRS Proceedings. 449. 2 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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