M. Eller

521 total citations
12 papers, 138 citations indexed

About

M. Eller is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Hardware and Architecture. According to data from OpenAlex, M. Eller has authored 12 papers receiving a total of 138 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 1 paper in Condensed Matter Physics and 1 paper in Hardware and Architecture. Recurrent topics in M. Eller's work include Advancements in Semiconductor Devices and Circuit Design (11 papers), Semiconductor materials and devices (11 papers) and Ferroelectric and Negative Capacitance Devices (3 papers). M. Eller is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (11 papers), Semiconductor materials and devices (11 papers) and Ferroelectric and Negative Capacitance Devices (3 papers). M. Eller collaborates with scholars based in United States, Germany and South Korea. M. Eller's co-authors include Srikanth Samavedam, J. Félix, Dennis R. Ball, B.L. Draper, L. W. Massengill, T.L. Meisenheimer, Xiaogang Wu, M.R. Shaneyfelt, M. King and En Xia Zhang and has published in prestigious journals such as IEEE Electron Device Letters, IEEE Transactions on Nuclear Science and IEEE Transactions on Semiconductor Manufacturing.

In The Last Decade

M. Eller

11 papers receiving 132 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Eller United States	7	137	10	8	4	2	12	138
B.A. Rainey United States	5	131 1.0×	13 1.3×	5 0.6×	6 1.5×	2 1.0×	7	134
N. Feilchenfeld United States	8	171 1.2×	10 1.0×	6 0.8×	5 1.3×	5 2.5×	17	174
O. Saxod France	5	82 0.6×	5 0.5×	13 1.6×	6 1.5×		10	92
H. Deshpande United States	5	136 1.0×	24 2.4×	3 0.4×	7 1.8×	2 1.0×	10	136
R. James United States	2	143 1.0×	9 0.9×	3 0.4×	5 1.3×	5 2.5×	3	143
Slavica Malobabic United States	9	301 2.2×	16 1.6×	7 0.9×	2 0.5×	6 3.0×	24	304
B. Haran United States	4	66 0.5×	17 1.7×	3 0.4×	5 1.3×	1 0.5×	8	66
P. Hopper United States	12	377 2.8×	5 0.5×	11 1.4×	3 0.8×	4 2.0×	46	380
M. Iwai Japan	2	54 0.4×	8 0.8×	7 0.9×		2 1.0×	4	54
K. Komeyli United States	6	72 0.5×	3 0.3×	13 1.6×	5 1.3×	5 2.5×	6	72

Countries citing papers authored by M. Eller

Since Specialization

Citations

This map shows the geographic impact of M. Eller's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Eller with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Eller more than expected).

Fields of papers citing papers by M. Eller

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Eller. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Eller. The network helps show where M. Eller may publish in the future.

Co-authorship network of co-authors of M. Eller

This figure shows the co-authorship network connecting the top 25 collaborators of M. Eller. A scholar is included among the top collaborators of M. Eller based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Eller. M. Eller is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Lu, Yi, Haicheng Cao, Tsung‐Han Tsai, et al.. (2025). Band Alignment and Leakage Mechanism Analysis of p-Si/n-AlN Heterojunction Diodes with the Al ₂ O ₃ Interlayer. ACS Applied Electronic Materials. 7(21). 9700–9709.

Zhao, Pei, Xiaoli He, Haojun Zhang, et al.. (2017). Influence of stress induced CT local layout effect (LLE) on 14nm FinFET. T228–T229. 11 indexed citations

King, M., Xiaogang Wu, M. Eller, et al.. (2016). Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance. IEEE Transactions on Nuclear Science. 64(1). 285–292. 60 indexed citations

Togo, M., Xingxing Zhang, Dina H. Triyoso, et al.. (2016). Novel N/PFET Vt control by TiN plasma nitridation for aggressive gate scaling. 1–2. 2 indexed citations

Pal, Rohit, M. Togo, Xing Zhang, et al.. (2015). Variation improvement for manufacturable FINFET technology. 21.2.1–21.2.4. 5 indexed citations

Singh, Jagar, A. Bousquet, Lili Cheng, et al.. (2014). Analog, RF, and ESD device challenges and solutions for 14nm FinFET technology and beyond. 1–2. 8 indexed citations

Mittal, Anurag, et al.. (2014). Anti-fuse memory array embedded in 14nm FinFET CMOS with novel selector-less bit-cell featuring self-rectifying characteristics. 1–2. 6 indexed citations

Yuan, Jun, V. Chan, N. Rovedo, et al.. (2009). Blanket SMT With In Situ N2 Plasma Treatment on the $\langle \hbox{100} \rangle$ Wafer for the Low-Cost Low-Power Technology Application. IEEE Electron Device Letters. 30(9). 916–918. 1 indexed citations

Tilke, A., et al.. (2007). Shallow Trench Isolation for the 45-nm CMOS Node and Geometry Dependence of STI Stress on CMOS Device Performance. IEEE Transactions on Semiconductor Manufacturing. 20(2). 59–67. 12 indexed citations

10.

Huang, Shih-Fen, C. Wann, M. Eller, et al.. (2002). Scalability and biasing strategy for CMOS with active well bias. 107–108. 24 indexed citations

11.

Jungemann, Christoph, B. Meinerzhagen, & M. Eller. (1999). On the number of fast interface states of standard CMOS technologies. IEEE Electron Device Letters. 20(6). 283–285. 6 indexed citations

12.

Risch, Lorenz, et al.. (1996). Fabrication and Electrical Characterization of SI/SIGE P-Channel MOSFETs with a Delta Doped Boron Layer. European Solid-State Device Research Conference. 465–468. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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