Josef Watts

708 total citations
28 papers, 345 citations indexed

About

Josef Watts is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Artificial Intelligence. According to data from OpenAlex, Josef Watts has authored 28 papers receiving a total of 345 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 3 papers in Hardware and Architecture and 2 papers in Artificial Intelligence. Recurrent topics in Josef Watts's work include Advancements in Semiconductor Devices and Circuit Design (21 papers), Semiconductor materials and devices (19 papers) and Silicon Carbide Semiconductor Technologies (6 papers). Josef Watts is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (21 papers), Semiconductor materials and devices (19 papers) and Silicon Carbide Semiconductor Technologies (6 papers). Josef Watts collaborates with scholars based in United States, Singapore and Netherlands. Josef Watts's co-authors include G. Gildenblat, R. van Langevelde, Sunghoon Lee, R. Williams, E. Nowak, N. Zamdmer, Jean‐Olivier Plouchart, Ning Lu, S. Springer and Weimin Wu and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems and Solid-State Electronics.

In The Last Decade

Josef Watts

28 papers receiving 317 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Josef Watts United States	11	330	43	37	16	11	28	345
R. Williams United States	9	400 1.2×	46 1.1×	26 0.7×	21 1.3×	23 2.1×	22	409
K. Joardar United States	9	391 1.2×	27 0.6×	36 1.0×	18 1.1×	32 2.9×	20	399
Chung-Hsun Lin United States	12	304 0.9×	21 0.5×	28 0.8×	9 0.6×	14 1.3×	26	322
Shivendra Singh Parihar India	7	197 0.6×	21 0.5×	32 0.9×	25 1.6×	15 1.4×	28	220
Chetan Kumar Dabhi India	10	297 0.9×	25 0.6×	19 0.5×	34 2.1×	9 0.8×	34	325
Pramod Kolar United States	6	446 1.4×	93 2.2×	37 1.0×	8 0.5×	12 1.1×	7	458
B. Gentinne Belgium	9	338 1.0×	19 0.4×	124 3.4×	14 0.9×	18 1.6×	24	348
Behzad Ebrahimi Iran	12	401 1.2×	50 1.2×	32 0.9×	10 0.6×	4 0.4×	45	412
J.-P. Eggermont Belgium	9	311 0.9×	21 0.5×	138 3.7×	13 0.8×	15 1.4×	21	321
E. Hamdy United States	10	286 0.9×	101 2.3×	28 0.8×	21 1.3×	9 0.8×	34	305

Countries citing papers authored by Josef Watts

Since Specialization

Citations

This map shows the geographic impact of Josef Watts's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Josef Watts with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Josef Watts more than expected).

Fields of papers citing papers by Josef Watts

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Josef Watts. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Josef Watts. The network helps show where Josef Watts may publish in the future.

Co-authorship network of co-authors of Josef Watts

This figure shows the co-authorship network connecting the top 25 collaborators of Josef Watts. A scholar is included among the top collaborators of Josef Watts based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Josef Watts. Josef Watts is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lin, Yen-Kai, Pragya Kushwaha, Juan Pablo Duarte, et al.. (2018). New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs. IEEE Transactions on Electron Devices. 65(2). 463–469. 3 indexed citations

Singh, Jagar, Anirban Bandyopadhyay, Xingxing Zhang, et al.. (2017). 14-nm FinFET Technology for Analog and RF Applications. IEEE Transactions on Electron Devices. 65(1). 31–37. 70 indexed citations

Watts, Josef, Kok Wai Chew, Steffen Lehmann, et al.. (2017). RF-pFET in fully depleted SOI demonstrates 420 GHz F_T. 84–87. 6 indexed citations

Zhang, Shaoqiang, Wei Gao, Kok Wai Chew, et al.. (2015). A 130nm RFSOI technology with switch, LNA, and EDNMOS devices for integrated front-end module SoC applications. 47–50. 4 indexed citations

Watts, Josef, et al.. (2012). Statistical Compact Model Extraction: A Neural Network Approach. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 31(12). 1920–1924. 11 indexed citations

Li, Xin, Weimin Wu, Amit Jha, et al.. (2009). Benchmark Tests for MOSFET Compact Models With Application to the PSP Model. IEEE Transactions on Electron Devices. 56(2). 243–251. 29 indexed citations

Li, Xin, Weimin Wu, Amit Jha, et al.. (2007). Benchmarking the PSP Compact Model for MOS Transistors. 11. 259–264. 13 indexed citations

Wu, Weimin, G. Gildenblat, G.O. Workman, et al.. (2007). PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs. 41–48. 14 indexed citations

Wu, Weimin, G. Gildenblat, G.O. Workman, et al.. (2007). PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs (Invited Paper). 3 indexed citations

10.

Watts, Josef. (2006). Enhancing Productivity by Continuously Improving Standard Compact Models. 623–630. 7 indexed citations

11.

Springer, S., Sunghoon Lee, Ning Lu, et al.. (2006). Modeling of Variation in Submicrometer CMOS ULSI Technologies. IEEE Transactions on Electron Devices. 53(9). 2168–2178. 60 indexed citations

12.

Watts, Josef, et al.. (2006). Netlisting and Modeling Well-Proximity Effects. IEEE Transactions on Electron Devices. 53(9). 2179–2186. 16 indexed citations

13.

Harame, D.L., X. Wang, B. Jagannathan, et al.. (2006). Semiconductor Technology Choices for Ultrawide-Band (UWB) Systems. 2005. 725–734. 2 indexed citations

14.

Lu, Ning, et al.. (2005). Modeling FET Variation Within a Chip as a Function of Circuit Design and Layout Choices. TechConnect Briefs. 87–92. 12 indexed citations

15.

Cottrell, P.E., S.M. Csutak, D. Greenberg, et al.. (2005). Enabling RFCMOS solutions for emergingadvanced applications. AMS Acta (University of Bologna). 29–35. 1 indexed citations

16.

Watts, Josef, C.C. Enz, Carlos Galup‐Montoro, et al.. (2005). Advanced Compact Models for MOSFETs. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 3–12. 41 indexed citations

17.

Clark, William F., et al.. (2004). Predicting the SOI History Effect Using Compact Models. TechConnect Briefs. 2(2004). 183–186. 3 indexed citations

18.

Watts, Josef, et al.. (2002). Timing qualification of a 0.25-μm CMOS ASIC library using BSIM3 FET models. 2. 317–320. 3 indexed citations

19.

Hoffman, J., et al.. (1999). Extraction of Compact Model Parameters for ULSI MOSFETs Using a Genetic Algorithm. TechConnect Briefs. 176–179. 13 indexed citations

20.

Watts, Josef & G.W. Neudeck. (1996). Buried-gate oxide thinning during epitaxial lateral overgrowth for dual-gated metal–oxide–semiconductor field-effect transistors. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 1670–1674. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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