K. Shubhakar

610 total citations
42 papers, 451 citations indexed

About

K. Shubhakar is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, K. Shubhakar has authored 42 papers receiving a total of 451 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in K. Shubhakar's work include Semiconductor materials and devices (38 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). K. Shubhakar is often cited by papers focused on Semiconductor materials and devices (38 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers) and Integrated Circuits and Semiconductor Failure Analysis (19 papers). K. Shubhakar collaborates with scholars based in Singapore, India and Italy. K. Shubhakar's co-authors include K. L. Pey, Nagarajan Raghavan, Michel Bosman, S. J. O’Shea, Alok Ranjan, Sen Mei, Sunil Singh Kushvaha, Luca Larcher, Andrea Padovani and X. Wu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

K. Shubhakar

41 papers receiving 449 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Shubhakar Singapore 13 402 149 39 36 34 42 451
Hongsik Jeong South Korea 11 289 0.7× 111 0.7× 40 1.0× 39 1.1× 27 0.8× 47 327
Shaoan Yan China 12 266 0.7× 173 1.2× 20 0.5× 19 0.5× 31 0.9× 49 342
Daewoong Kwon South Korea 14 499 1.2× 188 1.3× 24 0.6× 39 1.1× 31 0.9× 34 526
Hubert Hody Belgium 13 428 1.1× 169 1.1× 67 1.7× 55 1.5× 50 1.5× 39 488
I. Kasko Germany 10 283 0.7× 158 1.1× 65 1.7× 32 0.9× 45 1.3× 31 356
Chang-Hsien Lin Taiwan 8 497 1.2× 199 1.3× 17 0.4× 29 0.8× 15 0.4× 20 526
Gaobo Xu China 13 648 1.6× 157 1.1× 33 0.8× 17 0.5× 20 0.6× 89 677
Kai‐Shin Li Taiwan 13 739 1.8× 302 2.0× 44 1.1× 47 1.3× 30 0.9× 36 804
Kil‐Su Jung South Korea 7 370 0.9× 184 1.2× 53 1.4× 69 1.9× 12 0.4× 12 429
N. Jossart Belgium 11 310 0.8× 58 0.4× 95 2.4× 50 1.4× 30 0.9× 24 344

Countries citing papers authored by K. Shubhakar

Since Specialization
Citations

This map shows the geographic impact of K. Shubhakar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Shubhakar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Shubhakar more than expected).

Fields of papers citing papers by K. Shubhakar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Shubhakar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Shubhakar. The network helps show where K. Shubhakar may publish in the future.

Co-authorship network of co-authors of K. Shubhakar

This figure shows the co-authorship network connecting the top 25 collaborators of K. Shubhakar. A scholar is included among the top collaborators of K. Shubhakar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Shubhakar. K. Shubhakar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
O’Shea, S. J., et al.. (2024). Destructive dielectric breakdown of 2D muscovite mica. Applied Physics Letters. 125(11). 1 indexed citations
2.
Shubhakar, K., et al.. (2023). Advances in VLSI, Signal Processing, Power Electronics, IoT, Communication and Embedded Systems. Lecture notes in electrical engineering. 1 indexed citations
3.
4.
Zhu, Xinyu, Shurong Dong, Fangjun Yu, et al.. (2022). Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection. Nanomaterials. 12(10). 1743–1743. 3 indexed citations
5.
Shubhakar, K., et al.. (2022). Dielectric breakdown of 2D muscovite mica. Scientific Reports. 12(1). 14076–14076. 15 indexed citations
6.
Shubhakar, K., et al.. (2021). Advances in VLSI, Signal Processing, Power Electronics, IoT, Communication and Embedded Systems. Lecture notes in electrical engineering. 1 indexed citations
7.
Ranjan, Alok, Nagarajan Raghavan, Francesco Maria Puglisi, et al.. (2019). Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics. IEEE Electron Device Letters. 40(8). 1321–1324. 20 indexed citations
8.
Pey, K. L., Alok Ranjan, Nagarajan Raghavan, K. Shubhakar, & S. J. O’Shea. (2019). Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride — The Knowns and the Unknowns. 1–12. 2 indexed citations
9.
Ranjan, Alok, Nagarajan Raghavan, S. J. O’Shea, et al.. (2018). Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films. Scientific Reports. 8(1). 64 indexed citations
10.
Ranjan, Alok, Francesco Maria Puglisi, Nagarajan Raghavan, et al.. (2018). Random telegraph noise in 2D hexagonal boron nitride dielectric films. Applied Physics Letters. 112(13). 22 indexed citations
11.
Shubhakar, K., Sen Mei, Nagarajan Raghavan, et al.. (2018). Impact of Carbon Doping on Polysilicon Grain Size Distribution and Yield Enhancement for 40-nm Embedded Nonvolatile Memory Technology. IEEE Transactions on Device and Materials Reliability. 18(1). 64–69. 3 indexed citations
12.
Puglisi, Francesco Maria, Alok Ranjan, Nagarajan Raghavan, et al.. (2017). Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations. Journal of Applied Physics. 122(2). 6 indexed citations
13.
Raghavan, Nagarajan, Francesco Maria Puglisi, S. J. O’Shea, et al.. (2016). Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy. Journal of Applied Physics. 119(8). 16 indexed citations
14.
Pey, K. L., et al.. (2016). Understanding the switching mechanism in RRAM using in-situ TEM. l 11500130. 36–37. 5 indexed citations
15.
Shubhakar, K., K. L. Pey, Michel Bosman, et al.. (2014). Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks: A nanoscopic study. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(3). 4 indexed citations
16.
Shubhakar, K., Nagarajan Raghavan, Sunil Singh Kushvaha, et al.. (2014). Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer. Microelectronics Reliability. 54(9-10). 1712–1717. 8 indexed citations
17.
Pey, K. L., et al.. (2013). Real-time analysis of ultra-thin gate dielectric breakdown and recovery - A reality. 319–331. 3 indexed citations
18.
Pey, K. L., K. Shubhakar, Nagarajan Raghavan, X. Wu, & Michel Bosman. (2013). Impact of local variations in high-k dielectric on breakdown and recovery characteristics of advanced gate stacks. 6. 1–2. 2 indexed citations
19.
Raghavan, Nagarajan, et al.. (2012). Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks. DR-NTU (Nanyang Technological University). 6A.1.1–6A.1.11. 18 indexed citations
20.
Raghavan, Nagarajan, K. L. Pey, K. Shubhakar, & Michel Bosman. (2010). Modified Percolation Model for Polycrystalline High-$ \kappa$ Gate Stack With Grain Boundary Defects. IEEE Electron Device Letters. 32(1). 78–80. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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