Koji Tsunoda

438 total citations
21 papers, 367 citations indexed

About

Koji Tsunoda is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Koji Tsunoda has authored 21 papers receiving a total of 367 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in Koji Tsunoda's work include Magnetic properties of thin films (10 papers), Advanced Memory and Neural Computing (9 papers) and Semiconductor Quantum Structures and Devices (6 papers). Koji Tsunoda is often cited by papers focused on Magnetic properties of thin films (10 papers), Advanced Memory and Neural Computing (9 papers) and Semiconductor Quantum Structures and Devices (6 papers). Koji Tsunoda collaborates with scholars based in Japan, United States and Switzerland. Koji Tsunoda's co-authors include Masaki Aoki, Yoshihiro Sato, Chikako Yoshida, Kentaro Kinoshita, Hideyuki Noshiro, Y. Fukuzumi, Zheng Wang, John R. Jameson, Peter B. Griffin and G. I. Meijer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Koji Tsunoda

21 papers receiving 357 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Koji Tsunoda Japan 9 323 132 83 67 43 21 367
N. Jossart Belgium 11 310 1.0× 95 0.7× 58 0.7× 34 0.5× 50 1.2× 24 344
Mei‐Chin Chen United States 9 302 0.9× 122 0.9× 39 0.5× 30 0.4× 36 0.8× 12 340
D. Crotti Belgium 15 417 1.3× 226 1.7× 83 1.0× 29 0.4× 55 1.3× 34 518
S. O. Park South Korea 6 383 1.2× 75 0.6× 107 1.3× 108 1.6× 55 1.3× 14 410
D. Gogl Germany 9 268 0.8× 152 1.2× 48 0.6× 24 0.4× 27 0.6× 13 328
Jiahao Yin China 13 333 1.0× 85 0.6× 107 1.3× 35 0.5× 41 1.0× 48 390
B. Sklénard France 12 314 1.0× 87 0.7× 121 1.5× 27 0.4× 30 0.7× 48 388
H. Hoenigschmid United States 8 219 0.7× 93 0.7× 42 0.5× 19 0.3× 21 0.5× 12 259
Gabriele Luca Donadio Belgium 13 405 1.3× 74 0.6× 304 3.7× 87 1.3× 36 0.8× 33 459
Chun‐Yen Chang Taiwan 13 466 1.4× 70 0.5× 202 2.4× 57 0.9× 23 0.5× 63 515

Countries citing papers authored by Koji Tsunoda

Since Specialization
Citations

This map shows the geographic impact of Koji Tsunoda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Koji Tsunoda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Koji Tsunoda more than expected).

Fields of papers citing papers by Koji Tsunoda

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Koji Tsunoda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Koji Tsunoda. The network helps show where Koji Tsunoda may publish in the future.

Co-authorship network of co-authors of Koji Tsunoda

This figure shows the co-authorship network connecting the top 25 collaborators of Koji Tsunoda. A scholar is included among the top collaborators of Koji Tsunoda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Koji Tsunoda. Koji Tsunoda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsunoda, Koji, et al.. (2021). Signal-to-noise characteristics of graphene photodetectors based on photothermoelectric effect. Journal of Applied Physics. 129(17). 5 indexed citations
2.
3.
Suzuki, Ryō, et al.. (2019). Suppression of three-dimensional pit formation of InAs on GaSb(0 0 1) by Sb-free two-step molecular beam epitaxy. Journal of Crystal Growth. 528. 125269–125269. 1 indexed citations
4.
5.
Suzuki, Ryō, et al.. (2019). Suppression of Three-Dimensional Pit Formation of InAs on GaSb(001) by Two-Step MBE. 1–2. 2 indexed citations
6.
Suzuki, Ryō, et al.. (2018). Effects of As2 pressure on InAs heteroepitaxial growth on vicinal GaSb(001) substrate by molecular beam epitaxy. Japanese Journal of Applied Physics. 57(11). 115502–115502. 8 indexed citations
7.
Suzuki, Ryō, et al.. (2017). Improvement in surface morphology of GaSb buffer layer by two-step high and low temperature growth. Journal of Crystal Growth. 477. 243–248. 3 indexed citations
8.
Yoshimoto, Shusuke, et al.. (2016). A Counter-based Read Circuit Tolerant to Process Variation for 0.4-V Operating STT-MRAM. 9(0). 79–83. 1 indexed citations
9.
Yoshimoto, Shusuke, et al.. (2015). A negative-resistance sense amplifier for low-voltage operating STT-MRAM. 8–9. 5 indexed citations
10.
Yoshida, Chikako, Yuichi Yamazaki, Hideyuki Noshiro, et al.. (2014). Reduction of Offset Field in Top-Pinned MTJ With Synthetic Antiferromagnetic Free Layer. IEEE Transactions on Magnetics. 50(11). 1–4. 1 indexed citations
11.
Yoshimoto, Shusuke, et al.. (2014). STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier. IEICE Transactions on Fundamentals of Electronics Communications and Computer Sciences. E97.A(12). 2411–2417. 2 indexed citations
12.
Yoshida, Chikako, Yuichi Yamazaki, Atsushi Takahashi, et al.. (2014). Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film. Journal of Applied Physics. 115(17). 10 indexed citations
13.
Yoshida, Chikako, et al.. (2013). Enhanced Thermal Stability in Perpendicular Top-Pinned Magnetic Tunnel Junction With Synthetic Antiferromagnetic Free Layers. IEEE Transactions on Magnetics. 49(7). 4363–4366. 24 indexed citations
14.
Yoshimoto, Shusuke, et al.. (2013). A 0.38-V operating STT-MRAM with process variation tolerant sense amplifier. 249–252. 8 indexed citations
15.
Lee, Young Min, et al.. (2010). Highly scalable STT-MRAM with MTJs of top-pinned structure in 1T/1MTJ cell. 49–50. 19 indexed citations
16.
Huda, Safeen, William J. Song, Ali Sheikholeslami, et al.. (2010). Negative-resistance read and write schemes for STT-MRAM in 0.13µm CMOS. 256–257. 55 indexed citations
17.
Yoshida, Chikako, et al.. (2009). A study of dielectric breakdown mechanism in CoFeB/MgO/CoFeB magnetic tunnel junction. 139–142. 32 indexed citations
18.
Kinoshita, Kentaro, et al.. (2008). Dominant Failure Mechanism in Data Retention Characteristics of Resistance Change Memory Consisting of NiO at High Temperature. Applied Physics Express. 1. 125001–125001. 6 indexed citations
19.
Sato, Yoshihiro, et al.. (2008). Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET. IEEE Transactions on Electron Devices. 55(5). 1185–1191. 80 indexed citations
20.
Jameson, John R., Y. Fukuzumi, Zheng Wang, et al.. (2007). Field-programmable rectification in rutile TiO2 crystals. Applied Physics Letters. 91(11). 86 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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