Kazuyoshi Torii

2.8k total citations
144 papers, 2.3k citations indexed

About

Kazuyoshi Torii is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Kazuyoshi Torii has authored 144 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 134 papers in Electrical and Electronic Engineering, 43 papers in Materials Chemistry and 20 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Kazuyoshi Torii's work include Semiconductor materials and devices (116 papers), Advancements in Semiconductor Devices and Circuit Design (69 papers) and Integrated Circuits and Semiconductor Failure Analysis (38 papers). Kazuyoshi Torii is often cited by papers focused on Semiconductor materials and devices (116 papers), Advancements in Semiconductor Devices and Circuit Design (69 papers) and Integrated Circuits and Semiconductor Failure Analysis (38 papers). Kazuyoshi Torii collaborates with scholars based in Japan, United States and United Kingdom. Kazuyoshi Torii's co-authors include Masahiko Hiratani, Hiroshi Miki, Shinichi Saito, Yasuhiro Shimamoto, Keiko Kushida-Abdelghafar, Yoshihisa Fujisaki, Shin’ichiro Kimura, Hiroshi Kitajima, T. Onai and T. Arikado and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Kazuyoshi Torii

139 papers receiving 2.2k citations

Peers

Countries citing papers authored by Kazuyoshi Torii

Since Specialization

Citations

This map shows the geographic impact of Kazuyoshi Torii's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kazuyoshi Torii with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kazuyoshi Torii more than expected).

Fields of papers citing papers by Kazuyoshi Torii

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kazuyoshi Torii. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kazuyoshi Torii. The network helps show where Kazuyoshi Torii may publish in the future.

Co-authorship network of co-authors of Kazuyoshi Torii

This figure shows the co-authorship network connecting the top 25 collaborators of Kazuyoshi Torii. A scholar is included among the top collaborators of Kazuyoshi Torii based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kazuyoshi Torii. Kazuyoshi Torii is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal–Oxide–Silicon Structure 2013 ·Japanese Journal of Applied Physics ·Takeshi Ishida, Naoki Tega, Yuki Mori, Hiroshi Miki, Toshiyuki Mine, (unknown), Kazuyoshi Torii, Renichi Yamada, Kenji Shiraishi	1
2	Low voltage (V dd ∼0.6 V) SRAM operation achieved by reduced threshold voltage variability in SOTB (silicon on thin BOX) 2006 ·Symposium on VLSI Technology ·Ryuta Tsuchiya, Nobuyuki Sugii, Takashi Ishigaki, Yukinori Morita, (unknown), Kazuyoshi Torii, S. Kimura	4
3	Impact of backside Cu contamination in the 3D integration process 2006 ·Symposium on VLSI Technology ·(unknown), Ken’ichi Takeda, Kazuyoshi Torii	5
4	High-Quality CVD SiO[sub 2] Interfacial Layer Prepared by Cyclic Deposition with O[sub 2] Plasma Treatment 2006 ·Journal of The Electrochemical Society ·Hirotaka Hamamura, M. Matsumura, Toshiyuki Mine, Kazuyoshi Torii	2
5	Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode 2006 ·Symposium on VLSI Technology ·Y. Sasago, M. Kinoshita, Takahiro Morikawa, (unknown), (unknown), Toshiyuki Mine, Akio Shima, Yasumasa Fujisaki, Haruki Kume, Hirokazu Moriya, N. Takaura, Kazuyoshi Torii	29
6	Extendibility of High Mobility HfSiON Gate Dielectrics 2005 ·Seiji Inumiya, (unknown), (unknown), Takeo Matsuki, Kazuyoshi Torii, Yasuo Nara	2
7	Effect of Purge Time on the Properties of HfO 2 Films Prepared by Atomic Layer Deposition 2004 ·IEICE Transactions on Electronics ·Takaaki Kawahara, Kazuyoshi Torii	3
8	Accurate Evaluation of Mobility in High Gate-Leakage-Current MOSFETs by Using a Transmission-Line Model 2004 ·IEEE Transactions on Electron Devices ·Osamu Tonomura, Y. Shimamoto, Hiroshi Miki, Shinichi Saito, Kazuyoshi Torii, Masahiko Hiratani, J. Yugami	2
9	Effect of Hf Sources, Oxidizing Agents, and NH₃/Ar Plasma on the Properties of HfAlO_x Films Prepared by Atomic Layer Deposition 2004 ·Japanese Journal of Applied Physics ·Takaaki Kawahara, Kazuyoshi Torii, (unknown), Akiyoshi Muto, Atsushi Horiuchi, Hiroyuki Ito, Hiroshi Kitajima	19
10	The mechanism of mobility degradation in MISFETs with Al/sub 2/O/sub 3/ gate dielectric 2003 ·Kazuyoshi Torii, Y. Shimamoto, Shinichi Saito, Osamu Tonomura, Masahiko Hiratani, Y. Manabe, Matty Caymax, Jan Willem Maes	16
11	Advanced oxynitride gate dielectrics for CMOS applications 2003 ·J. Yugami, Shigeo Tsujikawa, Ryuta Tsuchiya, Shinichi Saito, Y. Shimamoto, Kazuyoshi Torii, Toshiyuki Mine, T. Onai	2
12	Improved performance of FETs with HfAlO<sub>x</sub> gate dielectrics using optimized poly-SiGe gate electrodes 2003 ·Akiyoshi Muto, H. Ohji, T. Kawahara, (unknown), Kazuyoshi Torii, Hiroshi Kitajima	0
13	In-situ HfSiON/SiO<sub>2</sub> gate dielectric fabrication using hot wall batch system 2003 ·Tadayoshi Aoyama, Satoshi Kamiyama, (unknown), T. Sasaki, (unknown), Kazuyoshi Torii, Hiroshi Kitajima, T. Arikado	12
14	Improvement in thermal stability of the interfacial layer for poly Si/HfAlO<sub>x</sub> gate stacks 2003 ·(unknown), Atsushi Horiuchi, Akira Uedono, Kazuyoshi Torii	4
15	Rutile-type TiO2 thin film for high-k gate insulator 2003 ·Thin Solid Films ·Masaru Kadoshima, Masahiko Hiratani, Yasuhiro Shimamoto, Kazuyoshi Torii, Hiroshi Miki, Shin’ichiro Kimura, Toshihide Nabatame	212
16	Fixed charge-induced mobility degradation and its recovery in MISFETs with Al/sub 2/O/sub 3/ gate dielectric 2002 ·Kazuyoshi Torii, Y. Shimamoto, Shinichi Saito, (unknown), (unknown), Digh Hisamoto, N. Yokoyama, (unknown), T. Onai	5
17	A High-Endurance Read/Write Scheme for Half-V~c~c Plate Nonvolatile DRAMs with Ferroelectric Capacitors 2001 ·IEICE Transactions on Electronics ·Kazuyoshi Torii, Koji Kimura, (unknown), Hironori Fujisawa, T. Sakata, (unknown)	1
18	Strain-imaging observation of the polarization freezing of the domains under the electrode of a Pb(Zr, Ti)O3 film 1999 ·Applied Physics Letters ·Keiji Takata, Hiroshi Miki, Kazuyoshi Torii, Keiko Kushida-Abdelghafar, Yasumasa Fujisaki	7
19	Analysis and control of surface degenerated layers grown on thin Pb(Zr, Ti)O3 films 1997 ·Applied Surface Science ·Yoshihisa Fujisaki, Kazuyoshi Torii, Masahiko Hiratani, Keiko Kushida-Abdelghafar	17
20	Dielectric Properties of RF-Magnetron-Sputtered (Ba, Pb)(Zr, Ti)O₃ Thin Films 1992 ·Japanese Journal of Applied Physics ·Kazuyoshi Torii, T. Kaga, Eiji Takeda	10

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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