Kazuyoshi Torii

2.8k total citations
144 papers, 2.3k citations indexed

About

Kazuyoshi Torii is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Kazuyoshi Torii has authored 144 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 134 papers in Electrical and Electronic Engineering, 43 papers in Materials Chemistry and 20 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Kazuyoshi Torii's work include Semiconductor materials and devices (116 papers), Advancements in Semiconductor Devices and Circuit Design (69 papers) and Integrated Circuits and Semiconductor Failure Analysis (38 papers). Kazuyoshi Torii is often cited by papers focused on Semiconductor materials and devices (116 papers), Advancements in Semiconductor Devices and Circuit Design (69 papers) and Integrated Circuits and Semiconductor Failure Analysis (38 papers). Kazuyoshi Torii collaborates with scholars based in Japan, United States and United Kingdom. Kazuyoshi Torii's co-authors include Masahiko Hiratani, Hiroshi Miki, Shinichi Saito, Yasuhiro Shimamoto, Keiko Kushida-Abdelghafar, Yoshihisa Fujisaki, Shin’ichiro Kimura, Hiroshi Kitajima, T. Onai and T. Arikado and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Kazuyoshi Torii

139 papers receiving 2.2k citations

Peers

Kazuyoshi Torii

EEE

AMPO

EOMM

T. Schram Belgium

Feng Zhu United States

D. L. Kwong United States

T. Puzzer Australia

Bertrand Vilquin France

Morteza Fathipour Iran

Dieter Mergel Germany

D. Vignaud France

Paola Favia Belgium

Shinji Migita Japan

T. Schram Belgium

Kazuyoshi Torii

2.1k ×1.0

EEE

828 ×0.9

189 ×0.6

425 ×1.7

AMPO

188 ×0.9

EOMM

Citations per year, relative to Kazuyoshi Torii Kazuyoshi Torii (= 1×) peers T. Schram

Countries citing papers authored by Kazuyoshi Torii

Since Specialization

Citations

This map shows the geographic impact of Kazuyoshi Torii's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kazuyoshi Torii with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kazuyoshi Torii more than expected).

Fields of papers citing papers by Kazuyoshi Torii

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kazuyoshi Torii. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kazuyoshi Torii. The network helps show where Kazuyoshi Torii may publish in the future.

Co-authorship network of co-authors of Kazuyoshi Torii

This figure shows the co-authorship network connecting the top 25 collaborators of Kazuyoshi Torii. A scholar is included among the top collaborators of Kazuyoshi Torii based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kazuyoshi Torii. Kazuyoshi Torii is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ishida, Takeshi, Naoki Tega, Yuki Mori, et al.. (2013). State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal–Oxide–Silicon Structure. Japanese Journal of Applied Physics. 52(11R). 110203–110203. 1 indexed citations

Tsuchiya, Ryuta, Nobuyuki Sugii, Takashi Ishigaki, et al.. (2006). Low voltage (V dd ∼0.6 V) SRAM operation achieved by reduced threshold voltage variability in SOTB (silicon on thin BOX). Symposium on VLSI Technology. 150–151. 4 indexed citations

Takeda, Ken’ichi, et al.. (2006). Impact of backside Cu contamination in the 3D integration process. Symposium on VLSI Technology. 172–173. 5 indexed citations

Hamamura, Hirotaka, M. Matsumura, Toshiyuki Mine, & Kazuyoshi Torii. (2006). High-Quality CVD SiO[sub 2] Interfacial Layer Prepared by Cyclic Deposition with O[sub 2] Plasma Treatment. Journal of The Electrochemical Society. 153(7). G636–G636. 2 indexed citations

Sasago, Y., M. Kinoshita, Takahiro Morikawa, et al.. (2006). Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode. Symposium on VLSI Technology. 109(133). 24–25. 29 indexed citations

Inumiya, Seiji, et al.. (2005). Extendibility of High Mobility HfSiON Gate Dielectrics. 2 indexed citations

Kawahara, Takaaki & Kazuyoshi Torii. (2004). Effect of Purge Time on the Properties of HfO 2 Films Prepared by Atomic Layer Deposition. IEICE Transactions on Electronics. 87(1). 2–8. 3 indexed citations

Tonomura, Osamu, Y. Shimamoto, Hiroshi Miki, et al.. (2004). Accurate Evaluation of Mobility in High Gate-Leakage-Current MOSFETs by Using a Transmission-Line Model. IEEE Transactions on Electron Devices. 51(10). 1653–1658. 2 indexed citations

Kawahara, Takaaki, Kazuyoshi Torii, Akiyoshi Muto, et al.. (2004). Effect of Hf Sources, Oxidizing Agents, and NH₃/Ar Plasma on the Properties of HfAlO_x Films Prepared by Atomic Layer Deposition. Japanese Journal of Applied Physics. 43(7R). 4129–4129. 19 indexed citations

10.

Torii, Kazuyoshi, Y. Shimamoto, Shinichi Saito, et al.. (2003). The mechanism of mobility degradation in MISFETs with Al/sub 2/O/sub 3/ gate dielectric. 188–189. 16 indexed citations

11.

Yugami, J., Shigeo Tsujikawa, Ryuta Tsuchiya, et al.. (2003). Advanced oxynitride gate dielectrics for CMOS applications. 140–145. 2 indexed citations

12.

Muto, Akiyoshi, et al.. (2003). Improved performance of FETs with HfAlOx gate dielectrics using optimized poly-SiGe gate electrodes. 745. 64–68.

13.

Aoyama, Tadayoshi, Satoshi Kamiyama, T. Sasaki, et al.. (2003). In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system. 174–179. 12 indexed citations

14.

Horiuchi, Atsushi, et al.. (2003). Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks. 150–154. 4 indexed citations

15.

Kadoshima, Masaru, Masahiko Hiratani, Yasuhiro Shimamoto, et al.. (2003). Rutile-type TiO2 thin film for high-k gate insulator. Thin Solid Films. 424(2). 224–228. 212 indexed citations

16.

Torii, Kazuyoshi, Y. Shimamoto, Shinichi Saito, et al.. (2002). Fixed charge-induced mobility degradation and its recovery in MISFETs with Al/sub 2/O/sub 3/ gate dielectric. 230–232. 5 indexed citations

17.

Torii, Kazuyoshi, et al.. (2001). A High-Endurance Read/Write Scheme for Half-V~c~c Plate Nonvolatile DRAMs with Ferroelectric Capacitors. IEICE Transactions on Electronics. 84(6). 763–770. 1 indexed citations

18.

Takata, Keiji, Hiroshi Miki, Kazuyoshi Torii, Keiko Kushida-Abdelghafar, & Yasumasa Fujisaki. (1999). Strain-imaging observation of the polarization freezing of the domains under the electrode of a Pb(Zr, Ti)O3 film. Applied Physics Letters. 75(20). 3126–3128. 7 indexed citations

19.

Fujisaki, Yoshihisa, Kazuyoshi Torii, Masahiko Hiratani, & Keiko Kushida-Abdelghafar. (1997). Analysis and control of surface degenerated layers grown on thin Pb(Zr, Ti)O3 films. Applied Surface Science. 108(3). 365–369. 17 indexed citations

20.

Torii, Kazuyoshi, T. Kaga, & Eiji Takeda. (1992). Dielectric Properties of RF-Magnetron-Sputtered (Ba, Pb)(Zr, Ti)O₃ Thin Films. Japanese Journal of Applied Physics. 31(9S). 2989–2989. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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