Y. Shimamoto

413 total citations
25 papers, 327 citations indexed

About

Y. Shimamoto is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Y. Shimamoto has authored 25 papers receiving a total of 327 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in Y. Shimamoto's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). Y. Shimamoto is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). Y. Shimamoto collaborates with scholars based in Japan, Belgium and United States. Y. Shimamoto's co-authors include H. Miki, Yasumasa Fujisaki, Keiko Kushida-Abdelghafar, T. Onai, Toshiyuki Mine, J. Yugami, Shigeo Tsujikawa, Ryuta Tsuchiya, Shinichi Saito and Masahiko Hiratani and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

Y. Shimamoto

24 papers receiving 312 citations

Peers

Countries citing papers authored by Y. Shimamoto

Since Specialization

Citations

This map shows the geographic impact of Y. Shimamoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Shimamoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Shimamoto more than expected).

Fields of papers citing papers by Y. Shimamoto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Shimamoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Shimamoto. The network helps show where Y. Shimamoto may publish in the future.

Co-authorship network of co-authors of Y. Shimamoto

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Shimamoto. A scholar is included among the top collaborators of Y. Shimamoto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Shimamoto. Y. Shimamoto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Effects of interface properties in SiC MOSFETs on reliability 2015 ·Yuki Mori, Digh Hisamoto, Naoki Tega, M. Matsumura, (unknown), Akio Shima, Y. Shimamoto	11
2	Estimation of Real SiC-MOS Characteristics by Using Novel High-Speed Pulse IV 2014 ·Naoki Tega, Digh Hisamoto, Hiroyuki Yoshimoto, Akio Shima, Y. Shimamoto	1
3	Analysis of statistical variation in NBTI degradation of HfO<inf>2</inf>/SiO<inf>2</inf> FETs 2010 ·(unknown), Digh Hisamoto, Y. Shimamoto, Ryuta Tsuchiya, Itaru Yanagi, (unknown), Kazuyoshi Torii, (unknown), T. Hashimoto, (unknown), (unknown), T. Iwamatsu, (unknown), Masami Mizutani, Masashi Inoue, (unknown)	1
4	Anomalous Electron Storage Decrease in MONOS' Nitride Layers Thinner Than 4 nm 2008 ·IEEE Electron Device Letters ·Tadao Ishida, Toshiyuki Mine, Digh Hisamoto, Y. Shimamoto, R. Yamada	9
5	Quantum confinement effect for efficient hole injection in MONOS-type nonvolatile memory-the role of ultrathin i-Si/P<sup>+</sup> poly-Si stacked gate structure fabricated by laser spike annealing 2007 ·Itaru Yanagi, Toshiyuki Mine, Akio Shima, Shinichi Saito, Digh Hisamoto, Y. Shimamoto	0
6	Highly Reliable MIS Capacitors With Plasma Nitridation and Doubled Dielectric-Constant Tantalum Pentoxide 2005 ·IEEE Transactions on Electron Devices ·H. Miki, Y. Shimamoto, (unknown)	6
7	Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey 2005 ·Microelectronics Reliability ·(unknown), V. Kaushik, (unknown), Y. Shimamoto, T. Schram, L.-Å. Ragnarsson, Annelies Delabie, L. Pantisano, B. Eyckens, Jan Willem Maes, Stefan De Gendt, M. M. Heyns	3
8	Accurate Evaluation of Mobility in High Gate-Leakage-Current MOSFETs by Using a Transmission-Line Model 2004 ·IEEE Transactions on Electron Devices ·Osamu Tonomura, Y. Shimamoto, Hiroshi Miki, Shinichi Saito, Kazuyoshi Torii, Masahiko Hiratani, J. Yugami	2
9	The impact of sub monolayers of HfO/sub 2/ on the device performance of high-k based transistors [MOSFETs] 2004 ·Lars‐Åke Ragnarsson, L. Pantisano, V. Kaushik, Shinichi Saito, Y. Shimamoto, Stefan De Gendt, Marc Heyns	26
10	The impact of sub monolayers of HfO2 on the device performance of high-K based transistors 2003 ·L.-Å. Ragnarsson, L. Pantisano, (unknown), (unknown), Y. Shimamoto, Stefan De Gendt, Marc Heyns	9
11	The mechanism of mobility degradation in MISFETs with Al/sub 2/O/sub 3/ gate dielectric 2003 ·Kazuyoshi Torii, Y. Shimamoto, Shinichi Saito, Osamu Tonomura, Masahiko Hiratani, Y. Manabe, Matty Caymax, Jan Willem Maes	16
12	Advanced oxynitride gate dielectrics for CMOS applications 2003 ·J. Yugami, Shigeo Tsujikawa, Ryuta Tsuchiya, Shinichi Saito, Y. Shimamoto, Kazuyoshi Torii, Toshiyuki Mine, T. Onai	2
13	Effects of interactions between HfO<sub>2</sub> and poly-Si on MOSCAP and MOSFET electrical behavior 2003 ·V. Kaushik, E. Röhr, Stefan De Gendt, Annelies Delabie, Sven Van Elshocht, Martine Claes, (unknown), Y. Shimamoto, L.-Å. Ragnarsson, T. Witters, Y. Manabe, Marc Heyns	2
14	An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond 2003 ·Shigeo Tsujikawa, Toshiyuki Mine, Y. Shimamoto, Osamu Tonomura, Ryuta Tsuchiya, (unknown), (unknown), Kazuyoshi Torii, T. Onai, J. Yugami	7
15	A GaAs Bi-FET technology for large scale integration 2003 ·(unknown), Y. Shimamoto, Tetsuzo Ueda, (unknown), Daiju Ueda	4
16	High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies 2003 ·MRS Proceedings ·Matty Caymax, H. Bender, Bert Brijs, Thierry Conard, (unknown), Annelies Delabie, Marc Heyns, Bart Onsia, L.-Å. Ragnarsson, Olivier Richard, Wilfried Vandervorst, Sven Van Elshocht, Chao Zhao, Jan Willem Maes, L. Daté, (unknown), Edward Young, Wei‐Bor Tsai, Y. Shimamoto	6
17	Fixed charge-induced mobility degradation and its recovery in MISFETs with Al/sub 2/O/sub 3/ gate dielectric 2002 ·Kazuyoshi Torii, Y. Shimamoto, Shinichi Saito, (unknown), (unknown), Digh Hisamoto, N. Yokoyama, (unknown), T. Onai	5
18	A conformal ruthenium electrode for MIM capacitors in Gbit DRAMs using the CVD technology based on oxygen-controlled surface reaction 2002 ·Masahiko Hiratani, Toshihide Nabatame, Y. Matsui, Y. Shimamoto, Y. Sasago, Y. Nakamura, Yuzuru Ohji, Isamu Asano, S. Kimura	4
19	Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb (Zr, Ti) O~3 Thin Film Capacitors with IrO~2 Top Electrode 1998 ·IEICE Transactions on Electronics ·Y. Shimamoto, Yasumasa Fujisaki, (unknown), H. Miki	3
20	H 2 damage of ferroelectric Pb(Zr,Ti)O3 thin-film capacitors—The role of catalytic and adsorptive activity of the top electrode 1997 ·Applied Physics Letters ·Y. Shimamoto, Keiko Kushida-Abdelghafar, H. Miki, Yasumasa Fujisaki	114

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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