C.L. Keast

2.5k citations

69 papers · 1.8k indexed · h-index 21

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 25
- Advancements in Semiconductor Devices and Circuit Design 20
- 3D IC and TSV technologies 19
- CCD and CMOS Imaging Sensors 12
- Thin-Film Transistor Technologies 11
- Integrated Circuits and Semiconductor Failure Analysis 11
- Advanced MEMS and NEMS Technologies 8
- Photonic and Optical Devices 8
Materials Chemistry top 10%
Instrumentation top 10%
Atomic and Molecular Physics, and Optics top 10%
Hardware and Architecture top 10%

Co-authors: P.W. Wyatt J. Kedzierski J.A. Burns Paul Healey J.M. Knecht Pei-Lan Hsu D. Yost K. Warner
Cited by: Electrical and Electronic Engineering Materials Chemistry Instrumentation
Journals: IEEE Electron Device Letters (4 papers)IEEE Transactions on Electron Devices (4 papers)IEEE Microwave and Wireless Components Letters (3 papers)
Partner nations: United States France Israel

In The Last Decade

C.L. Keast

66 papers receiving 1.7k citations

Peers

Countries citing papers authored by C.L. Keast

Since Specialization

Citations

This map shows the geographic impact of C.L. Keast's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.L. Keast with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.L. Keast more than expected).

Fields of papers citing papers by C.L. Keast

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.L. Keast. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.L. Keast. The network helps show where C.L. Keast may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C.L. Keast, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C.L. Keast Line = papers co-authored together C.L. Keast links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	FDSOI Process Technology for Subthreshold-Operation Ultra-Low-Power Electronics ECS Transactions ·Steven A. Vitale,P.W. Wyatt,Pradeep Balachandran,J. Kedzierski,C.L. Keast	2011	1
2	Wafer-scale 3D integration of InGaAs photodiode arrays with Si readout circuits by oxide bonding and through-oxide vias Microelectronic Engineering ·Feifei Ran,Feifei Ran,D. Yost,J.M. Knecht,Samantha Barrios,David Chapman,Douglas C. Oakley,A.M. Soares,L.J. Mahoney,J.P. Donnelly,C.K. Chen,Vyshnavi Suntharalingam,R. Berger,Wenqian Hu,Pramote Laoprapaipan,C.L. Keast,David C. Shaver	2010	9
3	FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics Proceedings of the IEEE ·Steven A. Vitale,P.W. Wyatt,Pradeep Balachandran,J. Kedzierski,C.L. Keast	2010	70
4	Improvement of SOI MOSFET RF Performance by Implant Optimization IEEE Microwave and Wireless Components Letters ·Feifei Ran,J.M. Knecht,J. Kedzierski,Xiaodi Hu,Pascale Gouker,D. Yost,Jacqueline Tellinga,P.W. Wyatt,C.L. Keast	2010	5
5	Wafer-Scale 3D Integration of Silicon-on-Insulator RF Amplifiers DSpace@MIT (Massachusetts Institute of Technology) ·Feifei Ran,Xiaodi Hu,D. Yost,J.M. Knecht,P.W. Wyatt,J.A. Burns,K. Warner,Pascale Gouker,Jacqueline Tellinga,WK McShane,C.L. Keast	2009	8
6	Engineering polycrystalline Ni films to improve thickness uniformity of the chemical-vapor-deposition-grown graphene films Nanotechnology ·Stefan Thiele,Alfonso Reina,Paul Healey,J. Kedzierski,P.W. Wyatt,Pei-Lan Hsu,C.L. Keast,J.A. Schaefer,Jing Kong	2009	84
7	Radiation effects in MIT Lincoln lab 3DIC technology Pascale Gouker,P.W. Wyatt,Phyllis A. Gimotty,Xiaodi Hu,J.M. Knecht,Feifei Ran,C.L. Keast	2009	2
8	Wafer-Scale Packaged RF Microelectromechanical Switches IEEE Transactions on Microwave Theory and Techniques ·Jeremy Muldavin,C. O. Bozler,E. Fernandez,P.W. Wyatt,C.L. Keast	2008	20
9	Fully Depleted SOI RF Switch with Dynamic Biasing Mia Stiernman,C.K. Chen,P.W. Wyatt,J.M. Knecht,D. Yost,Pascale Gouker,Paul Healey,C.L. Keast	2007	7
10	Fully Packaged 4-bit 100 ps RFMEMS Time Delay IEEE MTT-S International Microwave Symposium digest ·Jeremy Muldavin,C. O. Bozler,E. Fernandez,C.L. Keast	2007	3
11	Wafer-Scale Packaged RF-MEMS Switches Jeremy Muldavin,C. O. Bozler,C.L. Keast	2006	15
12	Laser Radar Imager Based on 3D Integration of Geiger-Mode Avalanche Photodiodes with Two SOI Timing Circuit Layers Brian F. Aull,J.A. Burns,Hugo Emil Rudolph Arndt,Caidan Zhuoma,Д Я Антипин,C.L. Keast,J.M. Knecht,Andrew H. Loomis,Matthew J. Renzi,Junya Sato,Vyshnavi Suntharalingam,K. Warner,Deanna L. Wolfson,D. Yost,Douglas Young	2006	41
13	An investigation of wafer-to-wafer alignment tolerances for three-dimensional integrated circuit fabrication K. Warner,Hugo Emil Rudolph Arndt,Kenda Abed Al-Kareem,C.L. Keast,Margaret E. Mooney	2005	8
14	Wide-band low-loss MEMS packaging technology IEEE MTT-S International Microwave Symposium Digest, 2005. ·Jeremy Muldavin,C. O. Bozler,S. Rabe,C.L. Keast	2005	12
15	Power handling and linearity of MEM capacitive series switches Jeremy Muldavin,Giovanny A. Olarte,C. O. Bozler,S. Rabe,C.L. Keast	2003	26
16	Analog VLSI systems for early vision processing John L. Wyatt,C.L. Keast,Viktoriya Doroshko,Tina Santi Flaherty,Berthold K. P. Horn,Terry Knight,C.G. Sodini,Gabriel Le Mat Chez,Tomaso Poggio	2003	1
17	Characteristics of submicrometer LOCOS isolation Ch. Karibuhoye,J.E. Chung,C.L. Keast	2002	0
18	New insights into fully-depleted SOI transistor response after total-dose irradiation IEEE Transactions on Nuclear Science ·J.R. Schwank,M.R. Shaneyfelt,P.E. Dodd,J.A. Burns,C.L. Keast,P.W. Wyatt	2000	52
19	Sub-100 nm silicon on insulator complimentary metal–oxide semiconductor transistors by deep ultraviolet optical lithography Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. Fritze,J.A. Burns,P.W. Wyatt,Xiaodi Hu,Pascale Gouker,Feifei Ran,C.L. Keast,何鹏彬,D. Yost,Hoseung Yi,S. Mroczkowski,Paul H. Davis,M. Don Carriker,S. Deneault,Marek Kameništiak	2000	10
20	How practical is 193 nm lithography? Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. Rothschild,J.A. Burns,M. Don Carriker,Anthony R. Forte,C.L. Keast,Roderick R. Kunz,S. C. Palmateer,Jan Sedláček,M. Trites,Andrew Grenville,Daniel Corliss	1996	6

About C.L. Keast

C.L. Keast is a scholar working on Electrical and Electronic Engineering, Media Technology, Instrumentation, Biomedical Engineering and Surfaces, Coatings and Films, having authored 69 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), 3D IC and TSV technologies (19 papers), CCD and CMOS Imaging Sensors (12 papers), Thin-Film Transistor Technologies (11 papers), Integrated Circuits and Semiconductor Failure Analysis (11 papers), Advanced MEMS and NEMS Technologies (8 papers) and Photonic and Optical Devices (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Materials Chemistry (503 citations), Instrumentation (37 citations), Atomic and Molecular Physics, and Optics (302 citations) and Hardware and Architecture (65 citations). C.L. Keast has collaborated with scholars based in United States, France and Israel. Frequent co-authors include P.W. Wyatt, J. Kedzierski, J.A. Burns, Paul Healey, J.M. Knecht, Pei-Lan Hsu, D. Yost, K. Warner, C. O. Bozler and Steven A. Vitale. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Microwave and Wireless Components Letters, IEEE Transactions on Nuclear Science and IEEE Journal of Solid-State Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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