Huiling Shang

1.9k citations

35 papers · 1.1k indexed · h-index 16

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 32
- Advancements in Semiconductor Devices and Circuit Design 29
- Integrated Circuits and Semiconductor Failure Analysis 8
- Silicon Carbide Semiconductor Technologies 5
- Ferroelectric and Negative Capacitance Devices 4
- Advanced Memory and Neural Computing 4
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces 3
Materials Chemistry
Biomedical Engineering
- Nanowire Synthesis and Applications 6
Electronic, Optical and Magnetic Materials

Co-authors: M. Copel P. Kozlowski J. A. Ott M. Ieong K.W. Guarini H.‐S. Philip Wong Martin M. Frank E. P. Gusev
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: IEEE Electron Device Letters (5 papers)Applied Physics Letters (4 papers)Solid-State Electronics (2 papers)
Partner nations: United States South Korea China

In The Last Decade

Huiling Shang

32 papers receiving 1.1k citations

Peers

Countries citing papers authored by Huiling Shang

Since Specialization

Citations

This map shows the geographic impact of Huiling Shang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Huiling Shang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Huiling Shang more than expected).

Fields of papers citing papers by Huiling Shang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Huiling Shang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Huiling Shang. The network helps show where Huiling Shang may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Huiling Shang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Huiling Shang Line = papers co-authored together Huiling Shang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Fractional-order equivalent impedance model for junction-case thermal characteristics of insulated gate bipolar transistor modules COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering ·Huiling Shang,KoraA. A. Mahmoud,Fei Chen,Nan Zhang,Zhen Feng,Xi Chen	2025	0
2	TMEM16A Activation Inhibits Autophagy in Dorsal Root Ganglion Cells, Which is Associated with the p38 MAPK/mTOR Pathway Cellular and Molecular Neurobiology ·d' Ecouen Groupe de Recherche,Huiling Shang,D. Kawabata,敏博中館,Juan José Jiménez,Mira Günther,Carlos Jorge Aguilar-Ortigoza,Shaoyang Cui,L. Warnier-Wandel,Sri Resuti	2024	0
3	A Reliability Enhanced 5nm CMOS Technology Featuring 5^th Generation FinFET with Fully-Developed EUV and High Mobility Channel for Mobile SoC and High Performance Computing Application Risyad Fauziansyah Budi,Subhadeep Mukhopadhyay,Karla Jurjević,Saeidi Gh.A.,Qiguang Chen,Dongsheng Huang,Y. T. Harris,陈锦才,Ryan Lu,Shiwei Lin,K. A. S. U. Kuruppuarachchi,Huiling Shang,Andy Wilch,Hsin-Ying Lin,Geoffrey Yeap,Jun He	2020	19
4	Blanket SMT With In Situ N2 Plasma Treatment on the $\langle \hbox{100} \rangle$ Wafer for the Low-Cost Low-Power Technology Application IEEE Electron Device Letters ·Jun Yuan,V. Chan,N. Rovedo,R.B. Lincoln,أسماء محمد بن أحمد,V. Varadarajan,Carlos García Zavaleta,Е С Харченко,Saro Armenian,Anatoly Sh. Zhvitiashvili,Michael Belyansky,M. Eller,Nicolas. Werth,N. Cave,Huiling Shang,Yingsong Li,R. Divakaruni	2009	1
5	A novel, low-cost deep trench decoupling capacitor for high-performance, low-power bulk CMOS applications Costinel ȘERBAN,Abdel Rahman Al-Asha Hamedel Niel,Johanna Menhard,F. Faccenda,Xi Li,E. Parry,P. Parries,Huiling Shang,R. Divakaruni,Subramanian S. Iyer	2008	18
6	Germanium channel MOSFETs: Opportunities and challenges IBM Journal of Research and Development ·Huiling Shang,Martin M. Frank,E. P. Gusev,J. O. Chu,Stephen W. Bedell,K.W. Guarini,M. Ieong	2006	146
7	A low voltage SANOS nonvolatile semiconductor memory (NVSM) device Solid-State Electronics ·Yijie Zhao,Mao Cheng Tan,Huiling Shang,Marvin H. White	2006	20
8	Hafnium oxide gate dielectrics on sulfur-passivated germanium Applied Physics Letters ·Martin M. Frank,Steven J. Koester,M. Copel,J. A. Ott,Vamsi Paruchuri,Huiling Shang,Clara Claudia Stirbu	2006	112
9	High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Vicki Fraaza,Martin M. Frank,Huiling Shang,Sandrine Rivillon,Fabrice Amy,F.R. Veeneklaas,Vamsi Paruchuri,R. Mo,M. Copel,Tamara Sztyma,M. Gribelyuk,Yves J. Chabal	2005	7
10	Selectively formed high mobility strained Ge PMOSFETs for high performance CMOS Huiling Shang,J. O. Chu,Stephen W. Bedell,E. P. Gusev,P. Jamison,Achyut Tiwari,J. A. Ott,M. Copel,D. K. Sadana,K.W. Guarini,M. Ieong	2005	21
11	Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate IEEE Electron Device Letters ·Huiling Shang,贾欣蕊,P. Kozlowski,C. D’Emic,I. Babich,E. Sikorski,M. Ieong,H.‐S. Philip Wong,K.W. Guarini,Wilfried Haensch	2004	136
12	Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100) Applied Physics Letters ·E. P. Gusev,Huiling Shang,M. Copel,M. Gribelyuk,C. D’Emic,P. Kozlowski,T. Zabel	2004	79
13	Ultrathin<tex>$hbox Al_2hbox O_3$</tex>and<tex>$hboxHfO_2$</tex>Gate Dielectrics on Surface-Nitrided Ge IEEE Transactions on Electron Devices ·学花野,Carmen Croitoru,Huiling Shang,M. Copel,J. B. Hannon,J. Karasiński,Edward Preisler,Sanjay K. Banerjee,Supratik Guha	2004	107
14	Recent progress in devices and materials for CMOS technology H.‐S. Philip Wong,B. Doris,Evgeni Gusev,M. Ieong,E.C. Jones,J. Kedzierski,Zhibin Ren,K. Rim,Huiling Shang	2004	0
15	Channel design and mobility enhancement in strained germanium buried channel MOSFETs Huiling Shang,J. O. Chu,Marcin Burdacki,P. M. Mooney,Hilmy Machfudi,J. A. Ott,K. Rim,K. Chan,K.W. Guarini,M. Ieong	2004	7
16	Electrical characterization of germanium p-channel MOSFETs IEEE Electron Device Letters ·Huiling Shang,Justine Gallo,J. A. Ott,P. Kozlowski,S.E. Steen,E.C. Jones,H.‐S. Philip Wong,Stefanie Kuerten	2003	135
17	Epitaxial silicon and germanium on buried insulator heterostructures and devices Applied Physics Letters ·N. A. Bojarczuk,M. Copel,Supratik Guha,Vijay Narayanan,Edward Preisler,Frances M. Ross,Huiling Shang	2003	63
18	0.25V FDSOI CMOS technology for ultra-low voltage applications Huiling Shang,重幸光田,Ch Hemanth	2002	2
19	Interface studies of tungsten gate metal–oxide–silicon capacitors Applied Physics Letters ·Huiling Shang,Marvin H. White,K.W. Guarini,P. M. Solomon,E. Cartier,M Foster,J. Yurkas,Wen‐Chin Lee	2001	21
20	A novel 6H-SiC power DMOSFET with implanted p-well spacer IEEE Electron Device Letters ·David Juan Govantes Edwards,Huiling Shang,Michael White	1999	12

About Huiling Shang

Huiling Shang is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Control and Systems Engineering and Physiology, having authored 35 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers), Nanowire Synthesis and Applications (6 papers), Silicon Carbide Semiconductor Technologies (5 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Advanced Memory and Neural Computing (4 papers) and Semiconductor materials and interfaces (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Atomic and Molecular Physics, and Optics (329 citations), Materials Chemistry (290 citations), Biomedical Engineering (185 citations) and Electronic, Optical and Magnetic Materials (35 citations). Huiling Shang has collaborated with scholars based in United States, South Korea and China. Frequent co-authors include M. Copel, P. Kozlowski, J. A. Ott, M. Ieong, K.W. Guarini, H.‐S. Philip Wong, Martin M. Frank, E. P. Gusev, Wilfried Haensch and S.E. Steen. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Solid-State Electronics, IEEE Transactions on Electron Devices and Cellular and Molecular Neurobiology.

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