M. W. Goodwin

1.2k total citations
43 papers, 741 citations indexed

About

M. W. Goodwin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. W. Goodwin has authored 43 papers receiving a total of 741 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in M. W. Goodwin's work include Semiconductor Quantum Structures and Devices (19 papers), Advanced Semiconductor Detectors and Materials (15 papers) and Advancements in Semiconductor Devices and Circuit Design (14 papers). M. W. Goodwin is often cited by papers focused on Semiconductor Quantum Structures and Devices (19 papers), Advanced Semiconductor Detectors and Materials (15 papers) and Advancements in Semiconductor Devices and Circuit Design (14 papers). M. W. Goodwin collaborates with scholars based in United States, Belgium and United Kingdom. M. W. Goodwin's co-authors include David G. Seiler, Nadine Collaert, R. J. Koestner, M. A. Kinch, G. Groeseneken, R. Degraeve, B. Kaczer, Caitlin Stewart, M. Jurczak and S. Biesemans and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

M. W. Goodwin

43 papers receiving 713 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. W. Goodwin United States 17 652 332 85 57 25 43 741
T. Katsuyama Japan 13 433 0.7× 352 1.1× 84 1.0× 48 0.8× 42 1.7× 44 492
W.R. Hitchens United States 14 422 0.6× 308 0.9× 59 0.7× 46 0.8× 37 1.5× 28 477
R. W. Yanka United States 13 419 0.6× 322 1.0× 181 2.1× 43 0.8× 41 1.6× 27 484
K. Yasuda Japan 14 532 0.8× 250 0.8× 184 2.2× 76 1.3× 11 0.4× 69 563
Kazuhito Furuya Japan 13 658 1.0× 498 1.5× 50 0.6× 83 1.5× 34 1.4× 94 764
W.I. Wang United States 11 312 0.5× 313 0.9× 67 0.8× 55 1.0× 39 1.6× 42 371
M. Erdtmann United States 10 413 0.6× 292 0.9× 103 1.2× 89 1.6× 27 1.1× 38 467
Y. C. Lo United States 12 501 0.8× 437 1.3× 163 1.9× 36 0.6× 19 0.8× 18 556
S.E. Swirhun United States 14 614 0.9× 283 0.9× 54 0.6× 53 0.9× 24 1.0× 26 655
Kevin H. Chang United States 6 361 0.6× 391 1.2× 133 1.6× 54 0.9× 51 2.0× 9 470

Countries citing papers authored by M. W. Goodwin

Since Specialization
Citations

This map shows the geographic impact of M. W. Goodwin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. W. Goodwin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. W. Goodwin more than expected).

Fields of papers citing papers by M. W. Goodwin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. W. Goodwin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. W. Goodwin. The network helps show where M. W. Goodwin may publish in the future.

Co-authorship network of co-authors of M. W. Goodwin

This figure shows the co-authorship network connecting the top 25 collaborators of M. W. Goodwin. A scholar is included among the top collaborators of M. W. Goodwin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. W. Goodwin. M. W. Goodwin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lenoble, D., A. De Keersgieter, Nadine Collaert, et al.. (2006). Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions. 168–169. 17 indexed citations
2.
Collaert, Nadine, A. De Keersgieter, K.G. Anil, et al.. (2005). Performance improvement of tall triple gate devices with strained SiN layers. IEEE Electron Device Letters. 26(11). 820–822. 42 indexed citations
3.
Collaert, Nadine, M. Demand, Isabelle Ferain, et al.. (2005). Tall triple-gate devices with TiN/HfO/sub 2/ gate stack. 108–109. 38 indexed citations
4.
Kaczer, B., В. И. Архипов, R. Degraeve, et al.. (2005). Temperature dependence of the negative bias temperature instability in the framework of dispersive transport. Applied Physics Letters. 86(14). 42 indexed citations
5.
Kaczer, B., et al.. (2004). The influence of recovery and temperature on the NBTI power-law exponent. 1 indexed citations
7.
8.
Chandra, D., et al.. (1993). Influence of Hg pressure on diffusion coefficient of As in HgCdTe. Journal of Electronic Materials. 22(8). 1033–1037. 18 indexed citations
9.
Wale, Michael J. & M. W. Goodwin. (1992). Flip-chip bonding optimizes opto-ICs. IEEE Circuits and Devices Magazine. 8(6). 25–31. 16 indexed citations
10.
Goodwin, M. W., et al.. (1988). Deep levels in n-type HgCdTe. Journal of Crystal Growth. 86(1-4). 484–489. 6 indexed citations
11.
Goodwin, M. W., M. A. Kinch, & R. J. Koestner. (1988). Metal–insulator–semiconductor properties of HgTe–CdTe superlattices. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(4). 2685–2692. 17 indexed citations
12.
Seiler, David G., et al.. (1988). Two-dimensional behavior of molecular beam epitaxy grown HgTe. Applied Physics Letters. 52(16). 1332–1334. 1 indexed citations
13.
Seiler, David G., et al.. (1988). Characterization of molecular‐beam epitaxially grown HgTe films by Shubnikov–de Haas measurements. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(4). 2779–2784. 30 indexed citations
14.
Reed, Mark A., R. J. Koestner, M. W. Goodwin, & H. F. Schaake. (1988). Resonant tunneling in HgCdTe heterostructures. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(4). 2619–2622. 4 indexed citations
15.
Goodwin, M. W., et al.. (1987). Electrical measurements of molecular-beam epitaxy HgTe–CdTe superlattices and absorption coefficient analysis of molecular-beam epitaxy HgTe. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 5(5). 3110–3114. 12 indexed citations
16.
Reed, Mark A., R. J. Koestner, M. W. Goodwin, & H. F. Schaake. (1987). Resonant tunneling through a HgTe/Hg1−xCdxTe double-barrier, single-quantum-well heterostructure. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 5(5). 3147–3149. 1 indexed citations
17.
Reed, Mark A., R. J. Koestner, & M. W. Goodwin. (1986). Resonant tunneling through a HgTe/Hg1−xCdxTe double barrier, single quantum well heterostructure. Applied Physics Letters. 49(19). 1293–1295. 27 indexed citations
18.
Kinch, M. A. & M. W. Goodwin. (1985). II-VI infrared superlattices. Journal of Applied Physics. 58(11). 4455–4458. 12 indexed citations
19.
Goodwin, M. W. & Caitlin Stewart. (1983). Proton-exchanged optical waveguides in Y -cut lithium niobate. Electronics Letters. 19(6). 223–224. 29 indexed citations
20.
Seiler, David G., M. W. Goodwin, & Alan Miller. (1980). Resonant Magneto-optical Transitions from a Mid-Gap Level inn-InSb. Physical Review Letters. 44(12). 807–810. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026