W. Hänsch

1.8k citations

97 papers · 1.4k indexed · h-index 17

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
Biomedical Engineering top 10%
- Nanowire Synthesis and Applications

Papers in

Electrical and Electronic Engineering 87
- Semiconductor materials and devices 61
- Advancements in Semiconductor Devices and Circuit Design 43
- Integrated Circuits and Semiconductor Failure Analysis 14
- Silicon Carbide Semiconductor Technologies 13
- Electronic Packaging and Soldering Technologies 6
Instrumentation 4

Co-authors: D. Schmitt‐Landsiedel I. Eisele T. Nirschl Mirjam Weis Elisabeth Oswald Matheus Hauder Jörg Schulze Harald Goßner
Journals: Thin Solid Films (15 papers)Solid-State Electronics (6 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (5 papers)Applied Physics Letters (5 papers)Microelectronic Engineering (4 papers)
Partner nations: Germany United States Japan

In The Last Decade

W. Hänsch

94 papers receiving 1.4k citations

Peers

Countries citing papers authored by W. Hänsch

Since Specialization

Citations

This map shows the geographic impact of W. Hänsch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Hänsch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Hänsch more than expected).

Fields of papers citing papers by W. Hänsch

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Hänsch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Hänsch. The network helps show where W. Hänsch may publish in the future.

Co-authorship network

The 25 scholars most cited alongside W. Hänsch, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W. Hänsch Line = papers co-authored together W. Hänsch links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon Field Emitter Arrays Micromachines ·Yan DESFOSSÉS, STHEFANY INGRID DA SILVA, Alex Shigueo Linczuk, Sandrine Blanchard, A. HONEIN, Michael Bachmann, Andreas Pahlke, Rupert Schreiner, W. Hänsch	2023	2
2	Enhancing photodetection efficiency of CMOS SiPMs using virtual guard rings in a standard 0.35 µm process Electronics Letters ·W Mello Júnior, 保雄山田, W. Hänsch	2023	0
3	Beta Factor Mapping of Individual Emitting Tips During Integral Operation of Field Emission Arrays Yan DESFOSSÉS, STHEFANY INGRID DA SILVA, Alex Shigueo Linczuk, Sandrine Blanchard, Michael Bachmann, A. HONEIN, Li-Xuan Xie, Andreas Pahlke, D. V. Khudyakov, Rupert Schreiner, W. Hänsch	2023	2
4	Experimental reliability study of cumulative damage models on state-of-the-art semiconductor technologies for step-stress tests and mission profile stresses Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Yassine Elmourabit, Tobias Schlegl, S. ABBERGER, 隼石山, LI Zhao-wen, Steven Simon, T. Sulima, S. Tomassetti, W. Hänsch	2020	2
5	Alternating Temperature Stress and Deduction of Effective Stress Levels from Mission Profiles for Semiconductor Reliability Yassine Elmourabit, C Luetke, Tobias Schlegl, Asce. Environmental, S. ABBERGER, 隼石山, LI Zhao-wen, Stefan Tielen, T. Sulima, S. Tomassetti, W. Hänsch	2019	2
6	Design of a 1D and 3D monolithically integrated piezoresistive MEMS high-g accelerometer Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·Vasunee Tiewtranon, Sajid MR, Siegfried Nau, M. Salk, K. Thoma, W. Hänsch	2014	7
7	Correlation between texture and mechanical stress durability of thin aluminum films Thin Solid Films ·WR Sabes, U Prasetyohadi Prabowo, W. Ruile, T. Sulima, W. Hänsch	2014	10
8	Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer Applied Physics Letters ·Deblina Sarkar, Harald Goßner, W. Hänsch, Kaustav Banerjee	2013	71
9	Reduction of optical crosstalk in silicon photomultipliers Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Olabisi Aminah Makanju, Sue Dallas, Helena Paul, Tobias Eggert, N. Nittur, Andreas Pahlke, 陳伯雄, 陈宇昕, Jürgen Knobloch, Sarkis S. Derderian, W. Hänsch, Wolf Sauter	2012	3
10	Applications of tunneling FET in memory devices Christopher W. Borsellino, Xinyan Liu, Xi Lin, Lei Liu, Wei Liu, David Wei Zhang, Pengfei Wang, W. Hänsch	2010	4
11	MOSFET-controlled emission from nanoscale silicon field emitters Srinivas Reddy Nookala, Markus Becherer, Tobias Schlegl, W. Hänsch	2009	1
12	Interface of atomic layer deposited Al₂O₃ on H‐terminated silicon physica status solidi (a) ·Kun Gao, Florian Speck, K. V. Emtsev, Thomas Seyller, L. Ley, Martin R. Oswald, W. Hänsch	2006	11
13	The tunnelling field effect transistors (TFET): the temperature dependence, the simulation model, and its application T. Nirschl, Pengfei Wang, W. Hänsch, D. Schmitt‐Landsiedel	2004	31
14	Ag metallization with high electromigration resistance for ULSI Solid-State Electronics ·Matheus Hauder, W. Hänsch, A. S. Nandeppanavar, D. Schmitt‐Landsiedel	2003	9
15	Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs DSpace (IIT Bombay) ·V. Ramgopal Rao, W. Hänsch, I. Eisele	2002	7
16	A vertical MOS-gated Esaki tunneling transistor in silicon Thin Solid Films ·W. Hänsch, 齐晓君, Jörg Schulze, I. Eisele	2000	86
17	Channel Engineering for the Reduction of Random-Dopant Placement-Induced Threshold Voltage Fluctuations in Vertical sub-100nm MOSFETs European Solid-State Device Research Conference ·W. Hänsch, 刘晓越, T. Gillman Moorhead, 齐晓君, Saline, Leonardo Peña Severiche, 松木直己, M. Miura–Mattausch	1999	1
18	Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry Thin Solid Films ·Jiang Hong, 洋一中野, W. Hänsch, V.M. Fuenzalida, A.L. Álvarez, 喻钟麟, I. Mártil, F. L. Martı́nez, I. Eisele	1999	13
19	Optimization of the channel doping profile of vertical sub-100 nm MOSFETs Thin Solid Films ·Saline, 齐晓君, K.G. Anil, W. Hänsch, Theodor Doll, T. Grabolla, Horst Schreiber, I. Eisele	1998	14
20	The Planar-Doped-Barrier-FET: MOSFET Overcomes Conventional Limitations European Solid-State Device Research Conference ·W. Hänsch, Valluri Rao, I. Eisele	1997	2

About W. Hänsch

W. Hänsch is a scholar working on Electrical and Electronic Engineering, Instrumentation, Radiation, Bioengineering and General Materials Science, having authored 97 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (61 papers), Advancements in Semiconductor Devices and Circuit Design (43 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers), Silicon Carbide Semiconductor Technologies (13 papers), Nanowire Synthesis and Applications (12 papers), Copper Interconnects and Reliability (8 papers), Radiation Detection and Scintillator Technologies (7 papers) and Electronic Packaging and Soldering Technologies (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Biomedical Engineering (369 citations), Electronic, Optical and Magnetic Materials (126 citations), Bioengineering (31 citations) and Materials Chemistry (214 citations). W. Hänsch has collaborated with scholars based in Germany, United States and Japan. Frequent co-authors include D. Schmitt‐Landsiedel, I. Eisele, T. Nirschl, Mirjam Weis, Elisabeth Oswald, Matheus Hauder, Jörg Schulze, Harald Goßner, Kaustav Banerjee and Deblina Sarkar. Their work appears in journals such as Thin Solid Films, Solid-State Electronics, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Applied Physics Letters and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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