T. Grabolla

1.0k total citations
31 papers, 263 citations indexed

About

T. Grabolla is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, T. Grabolla has authored 31 papers receiving a total of 263 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 5 papers in Biomedical Engineering. Recurrent topics in T. Grabolla's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Thin-Film Transistor Technologies (8 papers). T. Grabolla is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Thin-Film Transistor Technologies (8 papers). T. Grabolla collaborates with scholars based in Germany, United States and India. T. Grabolla's co-authors include I. Eisele, G. Kissinger, J. Moers, L. Vescan, Andreas Mai, Mindaugas Lukosius, Mirko Fraschke, Harald Goßner, H. Lüth and Marco Lisker and has published in prestigious journals such as Journal of The Electrochemical Society, Scientific Reports and Thin Solid Films.

In The Last Decade

T. Grabolla

30 papers receiving 245 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T. Grabolla Germany	10	224	63	47	42	18	31	263
A. Budrevich United States	5	324 1.4×	30 0.5×	98 2.1×	30 0.7×	25 1.4×	11	347
D. Iencinella Italy	8	290 1.3×	159 2.5×	82 1.7×	78 1.9×	13 0.7×	14	326
P. Sana United States	7	309 1.4×	140 2.2×	50 1.1×	95 2.3×	11 0.6×	15	348
J.F. Nijs Belgium	8	331 1.5×	97 1.5×	56 1.2×	124 3.0×	10 0.6×	13	357
A. Naem Canada	9	272 1.2×	62 1.0×	40 0.9×	105 2.5×	7 0.4×	28	311
T.C. Mele United States	6	249 1.1×	37 0.6×	22 0.5×	49 1.2×	9 0.5×	22	262
Mitsuhiro Omura Japan	8	169 0.8×	90 1.4×	51 1.1×	13 0.3×	16 0.9×	17	198
Jiro Ryuta Japan	8	261 1.2×	127 2.0×	52 1.1×	84 2.0×	23 1.3×	12	298
C. Richtarch France	9	298 1.3×	72 1.1×	88 1.9×	93 2.2×	24 1.3×	15	306
T.W. Ekstedt United States	6	446 2.0×	90 1.4×	35 0.7×	66 1.6×	12 0.7×	9	461

Countries citing papers authored by T. Grabolla

Since Specialization

Citations

This map shows the geographic impact of T. Grabolla's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Grabolla with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Grabolla more than expected).

Fields of papers citing papers by T. Grabolla

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Grabolla. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Grabolla. The network helps show where T. Grabolla may publish in the future.

Co-authorship network of co-authors of T. Grabolla

This figure shows the co-authorship network connecting the top 25 collaborators of T. Grabolla. A scholar is included among the top collaborators of T. Grabolla based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Grabolla. T. Grabolla is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lisker, Marco, et al.. (2021). Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene. Scientific Reports. 11(1). 13111–13111. 42 indexed citations

Lisker, Marco, et al.. (2021). Author Correction: Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene. Scientific Reports. 11(1). 17222–17222.

Knoll, D., et al.. (2012). Low-cost, high-voltage SiGe:C HBTs for a 0.18 μm BiCMOS Process. 22. 1–4. 3 indexed citations

Kissinger, G., et al.. (2006). Combination of optical measurement and precipitation theory to overcome the obstacles of detection limits. Materials Science in Semiconductor Processing. 9(1-3). 236–240. 6 indexed citations

Cuadras, Ángel, B. Garrido, J.R. Morante, et al.. (2004). Impact of carbon concentration on the interface density of states of metal-oxide Si1−x−y GexCy (strained) capacitors. Journal of Electronic Materials. 33(9). 1022–1027. 2 indexed citations

Grabolla, T., et al.. (2002). A novel buried oxide isolation for monolithic RF inductors on silicon. 535–539. 16 indexed citations

Fischer, Gunter, et al.. (2002). High performance integrated spiral inductors based on a minimum AC difference voltage principle. 71–74. 3 indexed citations

Knoll, D., H. Rücker, B. Heinemann, et al.. (2002). HBT before CMOS, a new modular SiGe BiCMOS integration scheme. 22.2.1–22.2.4. 3 indexed citations

Jungk, G., et al.. (1999). Ellipsometric Investigations on SiO2/Si: The Interface Response. physica status solidi (b). 215(1). 731–736. 2 indexed citations

10.

Kissinger, G., T. Grabolla, G. Morgenstern, et al.. (1999). Grown‐in Oxide Precipitate Nuclei in Czochralski Silicon Substrates and Their Role in Device Processing. Journal of The Electrochemical Society. 146(5). 1971–1976. 9 indexed citations

11.

Anil, K.G., W. Hänsch, Theodor Doll, et al.. (1998). Optimization of the channel doping profile of vertical sub-100 nm MOSFETs. Thin Solid Films. 336(1-2). 309–312. 14 indexed citations

12.

Moers, J., L. Vescan, M. Marso, et al.. (1998). Selectively grown vertical Si MOS transistor with reduced overlap capacitances. Thin Solid Films. 336(1-2). 306–308. 14 indexed citations

13.

Jungk, G. & T. Grabolla. (1998). Spectroscopic ellipsometry on silicon-oxide films on silicon. Thin Solid Films. 335(1-2). 253–257. 4 indexed citations

14.

Zastrow, U., Roger Loo, K. Szot, et al.. (1997). SIMS depth profiling of vertical p-channel Si-MOS transistor structures. Fresenius Journal of Analytical Chemistry. 358(1-2). 203–207. 5 indexed citations

15.

Kissinger, G., D. Gräf, U. Lambert, T. Grabolla, & Hans Richter. (1997). Key influence of the thermal history on process-induced defects in Czochralski silicon wafers. Semiconductor Science and Technology. 12(7). 933–937. 17 indexed citations

16.

Vescan, L., et al.. (1996). Selectively Grown Short Channel Vertical SI-P MOS Transistor for Future Three Dimensional Self-Aligned Integration. European Solid-State Device Research Conference. 943–946. 1 indexed citations

17.

Vescan, L., Roger Loo, J. Moers, et al.. (1996). Selectively grown vertical Si- p MOS transistorwith short channel lengths. Electronics Letters. 32(4). 406–407. 19 indexed citations

18.

Weidner, G., et al.. (1996). Nitrogen incorporation during N20- and NO-oxidation of silicon at temperatures down to 600°C. Microelectronics Journal. 27(7). 647–656. 2 indexed citations

19.

Goßner, Harald, et al.. (1995). Vertical MOS technology with sub-0.1 µm channellengths. Electronics Letters. 31(16). 1394–1396. 30 indexed citations

20.

Weidner, G., et al.. (1995). Nitrogen accumulation at thermally grown or chemical vapor deposited oxide on silicon by N2O- or NO-oxidation. Microelectronic Engineering. 28(1-4). 133–136. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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