T.P. Ma

4.0k citations

102 papers · 3.3k indexed · 1 hit paper · h-index 26

Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices 92
- Advancements in Semiconductor Devices and Circuit Design 69
- Integrated Circuits and Semiconductor Failure Analysis 44
- Ferroelectric and Negative Capacitance Devices 14
- Advanced Memory and Neural Computing 9
- Silicon Carbide Semiconductor Technologies 7
Materials Chemistry top 5%
- Electronic and Structural Properties of Oxides 5
Condensed Matter Physics top 5%
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces 8
Electronic, Optical and Magnetic Materials top 10%

Co-authors: Jin‐Ping Han Weihang Zhu T. TamagawaXin GuoA. Balasiński Yasushiro Nishioka M. Gibson T. Furukawa
Cited by: Electrical and Electronic Engineering Materials Chemistry Condensed Matter Physics
Journals: IEEE Electron Device Letters (30 papers)IEEE Transactions on Electron Devices (10 papers)IEEE Transactions on Nuclear Science (7 papers)
Partner nations: United States Japan United Kingdom

In The Last Decade

T.P. Ma

99 papers receiving 3.1k citations

Hit Papers

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Peers

Countries citing papers authored by T.P. Ma

Since Specialization

Citations

This map shows the geographic impact of T.P. Ma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.P. Ma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.P. Ma more than expected).

Fields of papers citing papers by T.P. Ma

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.P. Ma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.P. Ma. The network helps show where T.P. Ma may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T.P. Ma, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T.P. Ma Line = papers co-authored together T.P. Ma links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Piezoresistive Cantilever Microprobe with Integrated Actuator for Contact Resonance Imaging Sensors ·T.P. Ma,S Tanner-Barth,Erwin Peiner	2025	1
2	PSF-engineered snapshot full-Stokes polarizing-spectral-imaging via metasurface with reciprocally encoded anisotropic detour phase Optics & Laser Technology ·Wei Du,大之小林,大之小林,Zhi Wang,Zi‐Lan Deng,T.P. Ma,Xin He,Ji Qi,Zhixiong Hu,Xu Liu,Qing Yang	2024	1
3	Inelastic Electron Tunneling Spectroscopy (IETS) Study of Ultra-Thin Gate Dielectrics for Advanced CMOS Technology ECS Transactions ·T.P. Ma	2011	2
4	FEDRAM: A capacitor-less DRAM based on ferroelectric-gated field-effect transistor T.P. Ma	2008	2
5	Special reliability features for Hf-based high-/spl kappa/ gate dielectrics IEEE Transactions on Device and Materials Reliability ·T.P. Ma,H. Bu,X.W. Wang,Melia sri devi,Wei He,Miaomiao Wang,H.‐H. Tseng,P.J. Tobin	2005	43
6	A New Method to Extract EOT of Ultrathin Gate Dielectric With High Leakage Current IEEE Electron Device Letters ·(unknown),T.P. Ma	2004	34
7	Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition Microelectronics Journal ·T.P. Ma	2003	3
8	Kilovolt AlGaN/GaN HEMTs as Switching Devices physica status solidi (a) ·N.-Q. Zhang,Brendan Moran,Steven P. DenBaars,Umesh K. Mishra,X.W. Wang,T.P. Ma	2001	58
9	JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics MRS Proceedings ·T.P. Ma	1999	2
10	Electrical and Physical Characterization of Ultrathin Silicon Oxynitride Gate Dielectric Films Formed by the Jet Vapor Deposition Technique MRS Proceedings ·Mervyn M. Morse,Ghulam Sakhi Hassani,芳夫大原,David J. Brady,Valentina Ikonnikova,M. Balaaditya,Glenn W. Gale,Howard R. Huff,Stuart Ivor,K. Torres,Alain C. Diebold,Claudia Kimble,Karen Pechulis,George Brown,G. Bersuker,P. Zeitzoff,T. Tamagawa,Xi Guo,X.W. Wang,T.P. Ma	1999	1
11	Polarity-dependent tunneling current and oxide breakdown in dual-gate CMOSFETs IEEE Electron Device Letters ·Ying Shi,T.P. Ma,Suellen Silva‐Martins,Sumit Singh Dhanda	1998	24
12	Channel length dependence of random telegraph signal in sub-micron MOSFET's IEEE Electron Device Letters ·Ksenia Repina,T.P. Ma,Terence B. Hook	1994	22
13	Oxide charge buildup and spread-out during channel-hot-carrier injection in NMOSFETs IEEE Electron Device Letters ·Luka Hvalec,T.P. Ma	1992	7
14	A charge pumping method for rapid determination of interface-trap parameters in metal-oxide-semiconductor devices Review of Scientific Instruments ·Wenliang Chen,A. Balasiński,T.P. Ma	1992	6
15	Lateral distribution of radiation-induced damage in MOSFETs IEEE Transactions on Nuclear Science ·Luka Hvalec,A. Balasiński,T.P. Ma	1991	13
16	Theory of complementary holograms arising from electron–hole transport in photorefractive media Journal of the Optical Society of America B ·M. C. Bashaw,Oscar Hagström,T.P. Ma,R. C. Barker,S. Mroczkowski	1990	27
17	The Photorefractive Effect In Doped Bismuth Silicon Oxide Crystals Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Oscar Hagström,Dieter Just,M. C. Bashaw,S. Mroczkowski,T.P. Ma,R. C. Barker	1989	2
18	Hot-electron hardened Si-gate MOSFET utilizing F implantation IEEE Electron Device Letters ·Yasushiro Nishioka,K. Ohyu,Yuzuru Ohji,Coleen McCracken,K. Mukai,T.P. Ma	1989	83
19	Radiation-Induced Interface Traps in Mo/SiO2/Si Capacitors IEEE Transactions on Nuclear Science ·Yasushiro Nishioka,Eronides F. da Silva,T.P. Ma	1987	24
20	The effect of RF annealing upon electron-beam irradiated MIS structures Solid-State Electronics ·Wei Ma,T.P. Ma	1979	11

About T.P. Ma

T.P. Ma is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Ceramics and Composites and Surfaces, Coatings and Films, having authored 102 papers that have together received 3.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (92 papers), Advancements in Semiconductor Devices and Circuit Design (69 papers), Integrated Circuits and Semiconductor Failure Analysis (44 papers), Ferroelectric and Negative Capacitance Devices (14 papers), Advanced Memory and Neural Computing (9 papers), Semiconductor materials and interfaces (8 papers), Silicon Carbide Semiconductor Technologies (7 papers) and Electronic and Structural Properties of Oxides (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.1k citations), Materials Chemistry (921 citations), Condensed Matter Physics (206 citations), Atomic and Molecular Physics, and Optics (470 citations) and Electronic, Optical and Magnetic Materials (261 citations). T.P. Ma has collaborated with scholars based in United States, Japan and United Kingdom. Frequent co-authors include Jin‐Ping Han, Weihang Zhu, T. Tamagawa, Xin Guo, A. Balasiński, Yasushiro Nishioka, M. Gibson, T. Furukawa, X.W. Wang and Ying Shi. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, Journal of Applied Physics and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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