G.A.M. Hurkx

2.4k citations

72 papers · 1.9k indexed · 1 hit paper · h-index 19

Impact in

Instrumentation top 5%
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Radio Frequency Integrated Circuit Design

Papers in

Electrical and Electronic Engineering 65
- Advancements in Semiconductor Devices and Circuit Design 39
- Semiconductor materials and devices 27
- Silicon Carbide Semiconductor Technologies 23
- Electrostatic Discharge in Electronics 12
- Radio Frequency Integrated Circuit Design 10
- Chalcogenide Semiconductor Thin Films 8
Condensed Matter Physics 8
- GaN-based semiconductor devices and materials 8

Co-authors: D.B.M. Klaassen H.C. de Graaff W.J. Kloosterman J.A. Croon Jan Šonský Marco Silvestri W. van Haeringen Michael J. Uren
Journals: IEEE Transactions on Electron Devices (14 papers)Solid-State Electronics (5 papers)Journal of Applied Physics (4 papers)IEEE Electron Device Letters (3 papers)Applied Physics Letters (2 papers)
Partner nations: Netherlands Belgium Finland

In The Last Decade

G.A.M. Hurkx

67 papers receiving 1.8k citations

Hit Papers

align trajectories log scale

A new recombination model for device simulation including tunneling 1992 · 724 citations

Peers

Countries citing papers authored by G.A.M. Hurkx

Since Specialization

Citations

This map shows the geographic impact of G.A.M. Hurkx's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.A.M. Hurkx with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.A.M. Hurkx more than expected).

Fields of papers citing papers by G.A.M. Hurkx

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.A.M. Hurkx. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.A.M. Hurkx. The network helps show where G.A.M. Hurkx may publish in the future.

Co-authorship network

The 25 scholars most cited alongside G.A.M. Hurkx, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G.A.M. Hurkx Line = papers co-authored together G.A.M. Hurkx links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	2DEG Retraction and Potential Distribution of GaN–on–Si HEMTs Investigated Through a Floating Gate Terminal IEEE Transactions on Electron Devices ·Isabella Rossetto, Matteo Meneghini, Carlo De Santi, 洪新发, Razia Sultana, G.A.M. Hurkx, J.A. Croon, Jan Šonský, Gaudenzio Meneghesso, Enrico Zanoni	2018	11
2	Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation IEEE Transactions on Electron Devices ·Isabella Rossetto, Matteo Meneghini, 洪新发, Razia Sultana, G.A.M. Hurkx, J.A. Croon, Jan Šonský, Gaudenzio Meneghesso, Enrico Zanoni	2016	18
3	Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs IEEE Electron Device Letters ·Giorgia Longobardi, Florin Udrea, S. J. Sque, G.A.M. Hurkx, J.A. Croon, Ettore Napoli, Jan Šonský	2014	44
4	Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory Journal of Applied Physics ·Byeong Jun Ahn, K. Attenborough, G.A.M. Hurkx, F. J. Jedema, D. J. Gravesteijn, Bart J. Kooi	2011	21
5	Evidence of the Prominent Role of the Time-Under-Melt Parameter in the Reset Switching of Phase-Change Line Cells L. Goux, Mrs. Hema Kumbhar, Caterina Pons, G.A.M. Hurkx, J. G. Lisoni, Romain Delhougne, D. J. Gravesteijn, K. De Meyer, K. Attenborough, Dirk J. Wouters	2008	1
6	Physical Description of the Mixed-Mode Degradation Mechanism for High Performance Bipolar Transistors Institutional Research Information System (University of Udine) ·Andrew J. Borgdorff, G.A.M. Hurkx, Rebecca Ludvigsen, (unknown), Josué Antunes de Macêdo, Pierpaolo Palestri, L. Selmi	2006	16
7	RF Figures-of-Merit for Process Optimization IEEE Transactions on Electron Devices ·G.A.M. Hurkx, P. Agarwal, Rommert Dekker, Najah Abdallah, H. Veenstra	2004	18
8	Intermodulation Distortion of a Bipolar Common-Emitter Amplifier With Arbitrary Emitter Impedance and Input Matching Network IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications ·G.A.M. Hurkx, Najah Abdallah	2004	5
9	A physics-based model for the avalanche ruggedness of power diodes G.A.M. Hurkx, Zekerya Batur	2003	6
10	SiGe fast-switching power diodes Adam R. Brown, G.A.M. Hurkx, H.G.A. Huizing, 刘光耀, W.B. de Boer, J. G. M. van Berkum, P. C. Zalm, Elbert Huang, Zekerya Batur	2002	5
11	An efficient simulation method for linking bipolar process and device optimization to circuit performance G.A.M. Hurkx, Peter Baltus, Antonio Skarmeta, Ze-Ruxing Luo	2002	0
12	Selectively-Implanted Collector Profile Optimisation for High-Speed Vertical Bipolar Transistors European Solid-State Device Research Conference ·刘光耀, G.A.M. Hurkx, C.E. Timmering	1997	4
13	Physical Modelling and Simulation of Advanced Si-devices - An Industrial Approach European Solid-State Device Research Conference ·J.W. Slotboom, M.J. van Dort, G.A.M. Hurkx, D.B.M. Klaassen, W.J. Kloosterman, F. van Rijs, Renato Rivera Rusca, Matej Drame	1993	1
14	A novel compact model description of reverse-biased diode characteristics including tunnelling European Solid-State Device Research Conference ·G.A.M. Hurkx, H.C. de Graaff, W.J. Kloosterman, Ze-Ruxing Luo	1990	4
15	Modelling sidewall effects in downscaled bipolar transistors Solid-State Electronics ·G.A.M. Hurkx	1989	5
16	A new approach to A.C. characterization of bipolar transistors Solid-State Electronics ·G.A.M. Hurkx	1988	15
17	Physical modelling problems of ultrafast silicon bipolar transistors European Solid-State Device Research Conference ·H.C. de Graaff, G.A.M. Hurkx	1987	2
18	Self-consistent calculations on GaAs-Al_xGa_1-xAs heterojunctions Journal of Physics C Solid State Physics ·G.A.M. Hurkx, W. van Haeringen	1985	33
19	Calculations of Mechanical Stresses in Electrical Contact Situations IEEE Transactions on Components Hybrids and Manufacturing Technology ·Feihu Shao, G.A.M. Hurkx	1985	15
20	Novel method of producing ultrasmall platinum silicide gate electrodes Applied Physics Letters ·P.H. Woerlee, G.A.M. Hurkx, Ilari Welling, Manoj Kumar	1985	2

About G.A.M. Hurkx

G.A.M. Hurkx is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 72 papers that have together received 1.9k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (39 papers), Semiconductor materials and devices (27 papers), Silicon Carbide Semiconductor Technologies (23 papers), Phase-change materials and chalcogenides (13 papers), Electrostatic Discharge in Electronics (12 papers), Radio Frequency Integrated Circuit Design (10 papers), Chalcogenide Semiconductor Thin Films (8 papers) and GaN-based semiconductor devices and materials (8 papers). The work is most often cited by research in Instrumentation (113 citations), Electrical and Electronic Engineering (1.6k citations), Condensed Matter Physics (316 citations), Atomic and Molecular Physics, and Optics (386 citations) and Electronic, Optical and Magnetic Materials (173 citations). G.A.M. Hurkx has collaborated with scholars based in Netherlands, Belgium and Finland. Frequent co-authors include D.B.M. Klaassen, H.C. de Graaff, W.J. Kloosterman, J.A. Croon, Jan Šonský, Marco Silvestri, W. van Haeringen, Michael J. Uren, Martin Kuball and Markus Cäsar. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, Journal of Applied Physics, IEEE Electron Device Letters and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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