J. C. Lee

754 total citations
20 papers, 654 citations indexed

About

J. C. Lee is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. C. Lee has authored 20 papers receiving a total of 654 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. C. Lee's work include Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). J. C. Lee is often cited by papers focused on Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Ferroelectric and Negative Capacitance Devices (6 papers). J. C. Lee collaborates with scholars based in United States, South Korea and Taiwan. J. C. Lee's co-authors include P. D. Kirsch, John G. Ekerdt, Chang Seok Kang, J. G. Lozano, S. Oktyabrsky, S. Koveshnikov, Michail M. Yakimov, Kang Min Ok, Wilman Tsai and Rajni Sharma and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Electronic Materials.

In The Last Decade

J. C. Lee

20 papers receiving 632 citations

Peers

J. C. Lee
K. A. Nasyrov Russia
D. Roan United States
B.J. Garcı́a Spain
L. Chahed Algeria
C. W. Kim South Korea
弘之 松波
M.-Y. Ho United States
Igor Krylov Israel
Sergio A. Ajuria United States
Y. Akasaka Japan
K. A. Nasyrov Russia
J. C. Lee
Citations per year, relative to J. C. Lee J. C. Lee (= 1×) peers K. A. Nasyrov

Countries citing papers authored by J. C. Lee

Since Specialization
Citations

This map shows the geographic impact of J. C. Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. Lee more than expected).

Fields of papers citing papers by J. C. Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. Lee. The network helps show where J. C. Lee may publish in the future.

Co-authorship network of co-authors of J. C. Lee

This figure shows the co-authorship network connecting the top 25 collaborators of J. C. Lee. A scholar is included among the top collaborators of J. C. Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. C. Lee. J. C. Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Chang, Yao‐Feng, Burt Fowler, Fei Xue, et al.. (2013). Study of ambient effect in active SiO<inf>x</inf>-based resistive switching memory. 1–2. 3 indexed citations
4.
Chen, Yen‐Ting, Burt Fowler, Yao‐Feng Chang, et al.. (2013). Reduced Electroforming Voltage and Enhanced Programming Stability in Resistive Switching of SiO2 Thin Films. ECS Solid State Letters. 2(5). N18–N20. 6 indexed citations
5.
Yum, J., Derek W. Johnson, H. R. Harris, et al.. (2013). Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors. Applied Physics Letters. 103(22). 10 indexed citations
6.
Sohn, Chang-Woo, Chang Yong Kang, Rock‐Hyun Baek, et al.. (2013). Effect of fin height of tapered FinFETs on the sub-22-nm System on Chip (SoC) application using TCAD simulation. 1–2. 5 indexed citations
7.
Sohn, Chang-Woo, Chang Yong Kang, Rock‐Hyun Baek, et al.. (2012). Comparative study of geometry-dependent capacitances of planar FETs and double-gate FinFETs: Optimization and process variation. 1–2. 5 indexed citations
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Yum, J., Todd W. Hudnall, G. Bersuker, et al.. (2011). Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices. Journal of Applied Physics. 109(6). 41 indexed citations
10.
Yum, J., D. Ferrer, Todd W. Hudnall, et al.. (2011). Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric. Applied Physics Letters. 99(3). 13 indexed citations
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Shahrjerdi, Davood, Noppadon Nuntawong, Ganesh Balakrishnan, et al.. (2008). Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge∕Si1−xGex∕Si substrates with Al2O3 gate dielectric. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(3). 1182–1186. 2 indexed citations
13.
Koveshnikov, S., Wilman Tsai, Kang Min Ok, et al.. (2006). Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer. Applied Physics Letters. 88(2). 160 indexed citations
14.
Kang, Chang Yong, J. C. Lee, Rino Choi, et al.. (2006). Transient bicarrier response in high-k dielectrics and its impact on transient charge effects in high-k complementary metal oxide semiconductor devices. Applied Physics Letters. 88(16). 8 indexed citations
15.
Kirsch, P. D., Chang Seok Kang, J. G. Lozano, J. C. Lee, & John G. Ekerdt. (2002). Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100). Journal of Applied Physics. 91(7). 4353–4363. 237 indexed citations
16.
Ngai, T., et al.. (2001). Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric. Applied Physics Letters. 78(20). 3085–3087. 15 indexed citations
17.
Ngai, T., et al.. (2000). Electrical properties of ZrO2 gate dielectric on SiGe. Applied Physics Letters. 76(4). 502–504. 95 indexed citations
18.
Lee, J. C., et al.. (1995). Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides. Applied Physics Letters. 66(9). 1126–1128. 28 indexed citations
19.
Sudhama, C., J. Kim, R. Khamankar, V. Chikarmane, & J. C. Lee. (1994). Thickness-scaling of sputtered PZT films in the 200 nm range for memory applications. Journal of Electronic Materials. 23(12). 1261–1268. 5 indexed citations
20.
Sudhama, C., John C. Carrano, Logan Parker, et al.. (1990). Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film Capacitors. MRS Proceedings. 200. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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