Mathieu Moreau

653 citations

34 papers · 345 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 10%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- CCD and CMOS Imaging Sensors
Hardware and Architecture top 10%
- Physical Unclonable Functions (PUFs) and Hardware Security

Papers in

Electrical and Electronic Engineering 34
- Semiconductor materials and devices 29
- Advanced Memory and Neural Computing 24
- Ferroelectric and Negative Capacitance Devices 23
- Advancements in Semiconductor Devices and Circuit Design 10
- Silicon Carbide Semiconductor Technologies 5
Hardware and Architecture 1

Co-authors: Hassen Aziza Adnan Harb Daniela Munteanu Jean‐Michel Portal M. Bocquet H. Aziza Jean‐Luc Autran Damien Deleruyelle
Journals: Japanese Journal of Applied Physics (3 papers)Journal of Non-Crystalline Solids (3 papers)IEEE Transactions on Nanotechnology (3 papers)Electronics (2 papers)IEEE Access (2 papers)
Partner nations: France Lebanon Switzerland

In The Last Decade

Mathieu Moreau

33 papers receiving 333 citations

Peers

Countries citing papers authored by Mathieu Moreau

Since Specialization

Citations

This map shows the geographic impact of Mathieu Moreau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mathieu Moreau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mathieu Moreau more than expected).

Fields of papers citing papers by Mathieu Moreau

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mathieu Moreau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mathieu Moreau. The network helps show where Mathieu Moreau may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Mathieu Moreau, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Mathieu Moreau Line = papers co-authored together Mathieu Moreau links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Experimental Analysis of Oxide-Based RAM Analog Synaptic Behavior Electronics ·H. Aziza, Ruth M. J. Loewenstein-Benmair, Mathieu Moreau	2022	1
2	STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance IEEE Transactions on Device and Materials Reliability ·H. Aziza, Ruth M. J. Loewenstein-Benmair, Mathieu Moreau	2022	8
3	STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability 2022 IEEE International Symposium on Circuits and Systems (ISCAS) ·Hassen Aziza, Ruth M. J. Loewenstein-Benmair, Joe Mullender, Mathieu Moreau, Adnan Harb	2022	2
4	Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State Electronics ·H. Aziza, Said Hamdioui, Moritz Fieback, Mottaqiallah Taouil, Mathieu Moreau, Patrick Girard, A. Virazel, Sicheng Bing	2021	13
5	Storage Class Memory with Computing Row Buffer: A Design Space Exploration HAL (Le Centre pour la Communication Scientifique Directe) ·M Balcerek, Jean-Philippe Noël, Choudhury Meshkat Ahmed, Bastien Giraud, L. Ciampolini, Regiane Ferreira de Carvalho Lúcio, Jim Meckiff, Чебанов Виктор Сергеевич, Mathieu Moreau, Jean‐Michel Portal	2021	2
6	Density Enhancement of RRAMs using a RESET Write Termination for MLC Operation HAL (Le Centre pour la Communication Scientifique Directe) ·Hassen Aziza, Said Hamdioui, Moritz Fieback, Mottaqiallah Taouil, Mathieu Moreau	2021	9
7	An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs) IEEE Access ·Hassen Aziza, Mathieu Moreau, Moritz Fieback, Mottaqiallah Taouil, Said Hamdioui	2020	11
8	Write Termination Circuits for RRAM: A Holistic Approach From Technology to Application Considerations IEEE Access ·Alexandre Levisse, M. Bocquet, Masood Shahrokhi, Lynette Oon Lin Ean, Mathieu Moreau, E. Nowak, G. Molas, Elisa Vianello, David Atienza, Ángel Luis Muñoz Martín	2020	8
9	RRAM-based non-volatile SRAM cell architectures for ultra-low-power applications Analog Integrated Circuits and Signal Processing ·Joe Mullender, Adnan Harb, Hassen Aziza, Mathieu Moreau, Abdallah Kassem	2020	23
10	Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays IEEE Transactions on Circuits & Systems II Express Briefs ·Lynette Oon Lin Ean, Markus-N. Kruse, Alexandre Levisse, Gilles Barreto, Mathieu Moreau, E. Nowak, G. Molas, Elisa Vianello, Jean‐Michel Portal	2019	10
11	A Capacitor-Less CMOS Neuron Circuit for Neuromemristive Networks HAL (Le Centre pour la Communication Scientifique Directe) ·H. Aziza, Mathieu Moreau, Daoudi Samih, A. Virazel, Patrick Girard	2019	10
12	Resistive Switching Memory Architecture Based on Polarity Controllable Selectors IEEE Transactions on Nanotechnology ·Alexandre Levisse, Pierre‐Emmanuel Gaillardon, Bastien Giraud, Ian O’Connor, Shibiraj, Mathieu Moreau, Jean‐Michel Portal	2018	5
13	Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO2 )/28 nm FDSOI CMOS Technology IEEE Transactions on Nanotechnology ·Jean‐Michel Portal, M. Bocquet, Polina Pototskaja, Mathieu Moreau, Hassen Aziza, Damien Deleruyelle, K. Torki, Elisa Vianello, Alexandre Levisse, Bastien Giraud, Olivier Thomas, Fabien Clermidy	2017	22
14	A Built-In Self-Test Structure (BIST) for Resistive RAMs characterization: Application to bipolar OxRRAM Solid-State Electronics ·H. Aziza, Gilles Barreto, Mathieu Moreau, M.Revendra Diva Firdiansyah	2014	4
15	Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells Journal of Parallel and Distributed Computing ·Weisheng Zhao, J.M. Portal, Wang Kang, Mathieu Moreau, Novya Indri Astuti, H. Aziza, Jacques‐Olivier Klein, О.А. Штайн, Damien Querlioz, Damien Deleruyelle, M. Bocquet, D. Ravelosona, Christophe Müller, C. Chappert	2013	15
16	Effects of localized gate stack parasitic charge on current-voltage characteristics of double-gate MOSFETs with high-permittivity dielectrics and Ge-channel Journal of Non-Crystalline Solids ·Daniela Munteanu, Mathieu Moreau, J.L. Autran	2011	1
17	Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials Microelectronic Engineering ·Mathieu Moreau, Daniela Munteanu, Morgan J. Hart	2010	9
18	Electron transport through high-κ dielectric barriers: A non-equilibrium Green’s function (NEGF) study Journal of Non-Crystalline Solids ·Daniela Munteanu, J.L. Autran, Mathieu Moreau, Michel Houssa	2009	5
19	Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices MRS Proceedings ·Mathieu Moreau, Daniela Munteanu, Jean‐Luc Autran, Florence Bellenger, Jérôme Mitard, Michel Houssa	2009	0
20	Simulation Analysis of Quantum Confinement and Short-Channel Effects in Independent Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Japanese Journal of Applied Physics ·Mathieu Moreau, Daniela Munteanu, Jean‐Luc Autran	2008	11

About Mathieu Moreau

Mathieu Moreau is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Cellular and Molecular Neuroscience, Atomic and Molecular Physics, and Optics and Computer Networks and Communications, having authored 34 papers that have together received 345 indexed citations. Recurring topics across this work include Semiconductor materials and devices (29 papers), Advanced Memory and Neural Computing (24 papers), Ferroelectric and Negative Capacitance Devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), Silicon Carbide Semiconductor Technologies (5 papers), Advanced Data Storage Technologies (2 papers), Neuroscience and Neural Engineering (2 papers) and Neural dynamics and brain function (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (330 citations), Hardware and Architecture (35 citations), Cellular and Molecular Neuroscience (66 citations), Atomic and Molecular Physics, and Optics (39 citations) and Polymers and Plastics (15 citations). Mathieu Moreau has collaborated with scholars based in France, Lebanon and Switzerland. Frequent co-authors include Hassen Aziza, Adnan Harb, Daniela Munteanu, Jean‐Michel Portal, M. Bocquet, H. Aziza, Jean‐Luc Autran, Damien Deleruyelle, Christophe Müller and Weisheng Zhao. Their work appears in journals such as Japanese Journal of Applied Physics, Journal of Non-Crystalline Solids, IEEE Transactions on Nanotechnology, Electronics and IEEE Access.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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