P.D. Ye

818 total citations
19 papers, 674 citations indexed

About

P.D. Ye is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P.D. Ye has authored 19 papers receiving a total of 674 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in P.D. Ye's work include Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). P.D. Ye is often cited by papers focused on Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). P.D. Ye collaborates with scholars based in United States, China and Italy. P.D. Ye's co-authors include Yi Xuan, Yanqing Wu, Tian Shen, G. D. Wilk, Tao Yang, Han Liu, Adam T. Neal, Jiangjiang Gu, S. Nakahara and E.A. Stach and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

P.D. Ye

18 papers receiving 653 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P.D. Ye United States 10 628 202 186 116 34 19 674
S. Petrosyan Armenia 8 321 0.5× 252 1.2× 237 1.3× 129 1.1× 22 0.6× 45 433
Baoxue Bo China 10 361 0.6× 156 0.8× 215 1.2× 47 0.4× 31 0.9× 80 422
Hazem K. Khanfar Palestinian Territory 10 272 0.4× 239 1.2× 129 0.7× 56 0.5× 33 1.0× 56 339
Seth A. Fortuna United States 7 316 0.5× 270 1.3× 137 0.7× 400 3.4× 49 1.4× 23 501
W. Wohlmuth United States 11 324 0.5× 107 0.5× 143 0.8× 60 0.5× 25 0.7× 36 357
J. A. Czaban Canada 6 296 0.5× 202 1.0× 183 1.0× 342 2.9× 40 1.2× 10 435
Niti Goel United States 10 293 0.5× 132 0.7× 160 0.9× 212 1.8× 25 0.7× 17 384
S. J. Lee Singapore 10 335 0.5× 77 0.4× 131 0.7× 84 0.7× 19 0.6× 15 355
J. Penaud Belgium 10 354 0.6× 136 0.7× 157 0.8× 57 0.5× 22 0.6× 31 372
Yichen Mao China 12 338 0.5× 163 0.8× 166 0.9× 67 0.6× 16 0.5× 33 381

Countries citing papers authored by P.D. Ye

Since Specialization
Citations

This map shows the geographic impact of P.D. Ye's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.D. Ye with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.D. Ye more than expected).

Fields of papers citing papers by P.D. Ye

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.D. Ye. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.D. Ye. The network helps show where P.D. Ye may publish in the future.

Co-authorship network of co-authors of P.D. Ye

This figure shows the co-authorship network connecting the top 25 collaborators of P.D. Ye. A scholar is included among the top collaborators of P.D. Ye based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.D. Ye. P.D. Ye is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Ye, P.D., et al.. (2025). Extreme Environment-Compatible silicon resonant pressure sensors with high precision and reliability. Measurement. 256. 118275–118275. 1 indexed citations
2.
Ye, P.D., Yulan Lu, Bo Xie, et al.. (2025). Resonant High-Pressure Microsensors With Stress Redistributions Based on Supporting Micro-Beams. IEEE Electron Device Letters. 46(6). 984–987.
3.
Ye, P.D., et al.. (2024). High-Pressure Silicon Resonant Microsensor Based on Microbeam Arrays. 1–4. 1 indexed citations
4.
Neal, Adam T., Han Liu, Jiangjiang Gu, & P.D. Ye. (2012). Metal contacts to MoS<inf>2</inf>: A two-dimensional semiconductor. 65–66. 48 indexed citations
5.
Wrachien, Nicola, Andrea Cester, Enrico Zanoni, et al.. (2012). Effects of channel hot carrier stress on III&#x2013;V bulk planar MOSFETs. Padua Research Archive (University of Padova). 32. 3D.4.1–3D.4.7. 4 indexed citations
6.
Wu, Yanqing, O. Koybasi, Dmitri N. Zakharov, et al.. (2009). 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFET. IEEE Electron Device Letters. 30(7). 700–702. 78 indexed citations
7.
Wu, Yanqing, Min Xu, Yi Xuan, et al.. (2008). Inversion-Type Enhancement-Mode InP Mosfets with ALD High-K Al2O3 and HFO2 as Gate Dielectrics. 49–52. 2 indexed citations
8.
Xuan, Yi, Tian Shen, Yanqing Wu, Min Xu, & P.D. Ye. (2008). High-performance Inversion-type E-mode In<inf>0.65</inf>Ga<inf>0.35</inf>As MOSFETs with ALD HfO<inf>2</inf> as Gate Dielectric. 51. 37–38. 2 indexed citations
9.
10.
Varghese, Dhanoop, Yi Xuan, Yanqing Wu, et al.. (2008). Multi-probe interface characterization of In<inf>0.65</inf>Ga<inf>0.35</inf>As/Al<inf>2</inf>O<inf>3</inf> MOSFET. 84. 1–4. 13 indexed citations
11.
Xuan, Yi, Yanqing Wu, & P.D. Ye. (2008). High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm. IEEE Electron Device Letters. 29(4). 294–296. 242 indexed citations
12.
Xuan, Yi, Tian Shen, Min Xu, Yanqing Wu, & P.D. Ye. (2008). High-performance surface channel In-rich In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs with ALD high-k as gate dielectric. 29. 1–4. 32 indexed citations
13.
14.
Wu, Yanqing, Yi Xuan, P.D. Ye, Zhiyuan Cheng, & Anthony Lochtefeld. (2007). Inversion-type enhancement-mode InP MOSFETs with ALD Al<inf>2</inf>O<inf>3</inf>, HfO<inf>2</inf> and HfAlO nanolaminates as high-k gate dielectrics. 117–118. 8 indexed citations
15.
Xuan, Yi, et al.. (2007). Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- $\kappa$ Dielectrics. IEEE Transactions on Electron Devices. 54(8). 1811–1817. 101 indexed citations
16.
17.
Wu, Yanqing, P.D. Ye, G. D. Wilk, & Bingzheng Yang. (2006). GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric. Materials Science and Engineering B. 135(3). 282–284. 27 indexed citations
18.
Lin, H. C., P.D. Ye, & G. D. Wilk. (2006). Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs. Solid-State Electronics. 50(6). 1012–1015. 21 indexed citations
19.
Ye, P.D., G. D. Wilk, Bingzheng Yang, et al.. (2005). Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition. Solid-State Electronics. 49(5). 790–794. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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