G. Lucovsky

22.8k total citations · 7 hit papers
532 papers, 18.8k citations indexed

About

G. Lucovsky is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. Lucovsky has authored 532 papers receiving a total of 18.8k indexed citations (citations by other indexed papers that have themselves been cited), including 463 papers in Electrical and Electronic Engineering, 304 papers in Materials Chemistry and 112 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. Lucovsky's work include Semiconductor materials and devices (327 papers), Thin-Film Transistor Technologies (148 papers) and Silicon Nanostructures and Photoluminescence (106 papers). G. Lucovsky is often cited by papers focused on Semiconductor materials and devices (327 papers), Thin-Film Transistor Technologies (148 papers) and Silicon Nanostructures and Photoluminescence (106 papers). G. Lucovsky collaborates with scholars based in United States, Germany and South Korea. G. Lucovsky's co-authors include R. J. Nemanich, F. L. Galeener, J. C. Knights, D. V. Tsu, Robert M. White, Richard M. Martin, M. J. Mantini, R. C. Keezer, S. A. Solin and Jeffrey T. Glass and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

G. Lucovsky

515 papers receiving 17.9k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Structural interpretation of the vibrational spectra ofa-Si: H alloys

1979 662 citations G. Lucovsky, R. J. Nemanich et al. Physical review. B, Condensed matter profile →
Raman scattering characterization of carbon bonding in diamond and diamondlike thin films

1988 623 citations R. J. Nemanich, G. Lucovsky et al. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films profile →
Chemical effects on the frequencies of Si-H vibrations in amorphous solids

1979 541 citations G. Lucovsky profile →
On the photoionization of deep impurity centers in semiconductors

1965 530 citations G. Lucovsky profile →
Origin of Charge Density atLaAlO3onSrTiO3Heterointerfaces: Possibility of Intrinsic Doping

2007 498 citations G. Lucovsky et al. profile →
Structural interpretation of the infrared and Raman spectra of glasses in the alloy systemGe1−xSx

1974 401 citations G. Lucovsky, F. L. Galeener et al. profile →
Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films

1983 393 citations G. Lucovsky et al. Physical review. B, Condensed matter profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. Lucovsky United States	64	13.2k	12.6k	3.6k	3.0k	2.7k	532	18.8k
J. Tauc United States	42	13.9k 1.1×	20.5k 1.6×	3.5k 1.0×	3.1k 1.0×	4.9k 1.8×	159	28.8k
Erik Janzén Sweden	60	11.9k 0.9×	5.3k 0.4×	3.8k 1.1×	1.1k 0.4×	3.3k 1.2×	664	15.2k
R. A. Street United States	71	17.1k 1.3×	9.2k 0.7×	3.4k 1.0×	949 0.3×	2.9k 1.1×	483	22.9k
Alexander L. Shluger United Kingdom	60	7.2k 0.5×	8.0k 0.6×	3.7k 1.0×	833 0.3×	1.2k 0.4×	349	14.5k
Glen A. Slack United States	56	4.7k 0.4×	10.8k 0.9×	2.8k 0.8×	1.9k 0.6×	2.6k 1.0×	137	15.6k
A.K. Jonscher United Kingdom	41	7.8k 0.6×	12.7k 1.0×	2.3k 0.6×	2.7k 0.9×	4.7k 1.7×	151	18.6k
L. Ley Germany	74	11.9k 0.9×	17.6k 1.4×	6.8k 1.9×	652 0.2×	2.2k 0.8×	362	24.1k
Sokrates T. Pantelides United States	94	20.0k 1.5×	21.6k 1.7×	7.6k 2.1×	1.0k 0.3×	5.8k 2.1×	663	35.6k
S. P. S. Porto United States	45	4.3k 0.3×	7.2k 0.6×	3.2k 0.9×	838 0.3×	2.7k 1.0×	109	11.7k
K. L. Chopra India	46	9.3k 0.7×	9.8k 0.8×	2.0k 0.6×	648 0.2×	2.5k 0.9×	325	13.9k

Countries citing papers authored by G. Lucovsky

Since Specialization

Citations

This map shows the geographic impact of G. Lucovsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Lucovsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Lucovsky more than expected).

Fields of papers citing papers by G. Lucovsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Lucovsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Lucovsky. The network helps show where G. Lucovsky may publish in the future.

Co-authorship network of co-authors of G. Lucovsky

This figure shows the co-authorship network connecting the top 25 collaborators of G. Lucovsky. A scholar is included among the top collaborators of G. Lucovsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Lucovsky. G. Lucovsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lucovsky, G.. (2009). Intrinsic bonding defects in thin-film non-crystalline solids: Amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si:H), amorphous selenium (a-Se) and amorphous selenium–arsenic alloys (a-As _x Se₁₋ _x ). The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 89(28-30). 2449–2460. 1 indexed citations

Seo, Hyungtak, et al.. (2008). Suppression of defect states in HfSiON gate dielectric films on n-type Ge(100) substrates. Applied Physics Letters. 93(18). 16 indexed citations

Lucovsky, G., et al.. (2008). Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks. Microelectronic Engineering. 86(3). 224–234. 10 indexed citations

Lucovsky, G. & J. C. Phillips. (2004). Microscopic bonding and macroscopic strain relaxations at Si-SiO 2 interfaces. Applied Physics A. 78(4). 453–459. 29 indexed citations

Krug, C. & G. Lucovsky. (2004). Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(4). 1301–1308. 22 indexed citations

Fulton, C. C., Will Mecouch, K. M. Tracy, et al.. (2003). Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). Journal of Applied Physics. 93(7). 3995–4004. 89 indexed citations

Lamb, H. Henry, et al.. (2002). Reaction pathways in remote plasma nitridation of ultrathin SiO2 films. Journal of Applied Physics. 91(1). 48–55. 30 indexed citations

Niimi, H., et al.. (1998). Plasma-engineered Si−SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O. Surface and Coatings Technology. 98(1-3). 1524–1528. 2 indexed citations

Young, A. P., J. Schäfer, Gregg H. Jessen, et al.. (1998). Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si–SiO2 interfaces. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(4). 2177–2181. 4 indexed citations

10.

Hattangady, S. V., et al.. (1993). A Dual-Function Uhv-Compatible Chamber for i) Low-Temperature Plasma-Assisted Oxidation, and ii) High-Temperature Rapid Thermal Processing of Si-Based Dielectric Gate Heterostructures. MRS Proceedings. 303. 1 indexed citations

11.

Lucovsky, G., et al.. (1992). Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors. Journal of Vacuum Science and Technology. 10(3). 1070–1073.

12.

Lucovsky, G., J. T. Fitch, Cheng Wang, et al.. (1991). Process compatibility in integrated processing of semiconductor devices in multichamber systems. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 9(3). 1066–1072. 4 indexed citations

13.

Lucovsky, G., et al.. (1989). LOW-TEMPERATURE FORMATION OF HIGH-QUALITY ULTRA-THIN GATE OXIDE BY REMOTE PLASMA-ENHANCED CVD ( REMOTE PECVD ) PROCESS. 1. 386–389. 1 indexed citations

14.

Lucovsky, G., et al.. (1989). Formation of thin film dielectrics by remote plasma-enhanced chemical-vapor deposition (remote PECVD). Applied Surface Science. 39(1-4). 33–56. 16 indexed citations

15.

Lucovsky, G., et al.. (1985). Local Bonding in A—Sige Alloy Films. MRS Proceedings. 49. 3 indexed citations

16.

Joannopoulos, J. D., G. Lucovsky, & David Carlson. (1984). Electronic and vibrational properties. Springer eBooks. 1 indexed citations

17.

Lucovsky, G., Sokrates T. Pantelides, & F. L. Galeener. (1980). The physics of MOS insulators : proceedings of the International Topical Conference on the Physics of MOS Insulators, held at the Jane S. McKimmon Conference Center, North Carolina State University Raleigh, North Carolina, June 18-20, 1980. Pergamon Press eBooks. 4 indexed citations

18.

Galeener, F. L., G. Lucovsky, & J. C. Mikkelsen. (1980). Vibrational spectra and the structure of pure vitreousB2O3. Physical review. B, Condensed matter. 22(8). 3983–3990. 195 indexed citations

19.

Lucovsky, G., et al.. (1964). Detection of Coherent Light by Heterodyne Techniques Using Solid State Photodiodes. Quantum Electronics. 1731. 2 indexed citations

20.

Lucovsky, G., et al.. (1963). RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GaAs p-n JUNCTIONS. Applied Physics Letters. 3(5). 71–72. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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