G. Lucovsky

22.8k citations

532 papers · 18.8k indexed · 7 hit papers · h-index 64

Ceramics and Composites top 0.05%
Materials Chemistry top 0.1%
- Silicon Nanostructures and Photoluminescence 106
- Electronic and Structural Properties of Oxides 76
- Phase-change materials and chalcogenides 66
Electrical and Electronic Engineering top 0.1%
- Semiconductor materials and devices 327
- Thin-Film Transistor Technologies 148
- Advancements in Semiconductor Devices and Circuit Design 64
- Silicon and Solar Cell Technologies 53
Electronic, Optical and Magnetic Materials top 0.5%
Atomic and Molecular Physics, and Optics top 0.5%
- Semiconductor materials and interfaces 68

Co-authors: R. J. Nemanich F. L. Galeener J. C. Knights D. V. Tsu Robert M. White Richard M. Martin M. J. Mantini R. C. Keezer
Cited by: Ceramics and Composites Materials Chemistry Electrical and Electronic Engineering
Journals: Journal of Non-Crystalline Solids (57 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (50 papers)Applied Surface Science (25 papers)
Partner nations: United States Germany South Korea

In The Last Decade

G. Lucovsky

515 papers receiving 17.9k citations

Hit Papers

7 papers align trajectories log scale

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

2007 Physical Review Letters
1988 Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
1983 Physical review. B, Condensed matter
1979 Physical review. B, Condensed matter
1979 Solid State Communications
1974 Physical review. B, Solid state
1965 Solid State Communications

Peers

Countries citing papers authored by G. Lucovsky

Since Specialization

Citations

This map shows the geographic impact of G. Lucovsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Lucovsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Lucovsky more than expected).

Fields of papers citing papers by G. Lucovsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Lucovsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Lucovsky. The network helps show where G. Lucovsky may publish in the future.

Co-authorship network

The 25 scholars most cited alongside G. Lucovsky, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Lucovsky Line = papers co-authored together G. Lucovsky links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO₂, Si₃N₄, and Si Oxynitride Alloy Thin Films Japanese Journal of Applied Physics ·G. Lucovsky	2011	5
2	Intrinsic bonding defects in thin-film non-crystalline solids: Amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si:H), amorphous selenium (a-Se) and amorphous selenium–arsenic alloys (a-As _x Se₁₋ _x ) The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics ·G. Lucovsky	2009	1
3	Origin of Charge Density atLaAlO3onSrTiO3Heterointerfaces: Possibility of Intrinsic Dopingbreakdown → Physical Review Letters ·Wolter Siemons,Gertjan Koster,Hideki Yamamoto,Walter A. Harrison,G. Lucovsky,T. H. Geballe,Dave H. A. Blank,M. R. Beasley	2007	498
4	Application of Bond Constraint Theory to the Switchable Optical Memory MaterialGe2Sb2Te5 Physical Review Letters ·D.A. Baker,M. A. Paesler,G. Lucovsky,S. C. Agarwal,P. C. Taylor	2006	158
5	X-ray absorption spectra for transition metal high-κ dielectrics: Final state differences for intra- and inter-atomic transitions Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·G. Lucovsky,E. Conjura,C. C. Fulton,Ying Zou,R. J. Nemanich,Harald Ade	2004	18
6	Self-organized Si suboxide (SiO<sub>x</sub>, x<2) interfacial layers - optimization of performance and reliability in advanced devices G. Lucovsky,J. C. Phillips	2003	1
7	Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Hong Yang,G. Lucovsky	1998	11
8	Deposition of ultra-thin oxide dielectrics for MOSFETs by a combination of low-temperature plasma-assisted oxidation, and intermediate and high-temperature rapid thermal processing Journal of Non-Crystalline Solids ·G. Lucovsky,Veena Misra,S. V. Hattangady,Tetsuji Yasuda,J. J. Wortman	1995	1
9	Low-temperature plasma-assisted oxidation of Si: a new approach for creation of device-quality SiSiO2 interfaces with deposited dielectrics for applications in Si MOSFET technologies Journal of Non-Crystalline Solids ·G. Lucovsky,Tetsuji Yasuda,Yi Ma,S. V. Hattangady,Veena Misra,Xiaoli Xu,Yao Zhong-yao,J. J. Wortman	1994	5
10	A Dual-Function Uhv-Compatible Chamber for i) Low-Temperature Plasma-Assisted Oxidation, and ii) High-Temperature Rapid Thermal Processing of Si-Based Dielectric Gate Heterostructures MRS Proceedings ·S. V. Hattangady,Junpeng Huo,Mark J. Watkins,Yao Zhong-yao,Veena Misra,G. Lucovsky,J. J. Wortman	1993	1
11	Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors Journal of Vacuum Science and Technology ·SONIA YGLORIA,G. Lucovsky,K. J. Bachmann	1992	0
12	Chemically Modified Second Harmonic Generation at Surfaces on Vicinal Si(111) Wafers MRS Proceedings ·U. Emmerichs,C. Meyer,Karl Leo,H. Kurz,C. H. Björkman,Rita de Cássia Andrade Neiva Santos,Yi Ma,Tetsuji Yasuda,G. Lucovsky	1992	2
13	A New Two-Step Plasma-Assisted Surface Cleaningoxidation and Film-Deposition Process Sequence for The Formation of Si(100)/SiO₂ Interfaces with Low Densities of Interfacial Traps MRS Proceedings ·Yuncan Ma,Tetsuji Yasuda,S. Habermehl,Siliang He,F Grammatico,G. Lucovsky	1992	1
14	Preparation and properties of SiO2–SiOx heterostructures formed by uninterrupted processing by remote plasma enhanced chemical vapor deposition Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·D. V. Tsu,Xuan Ren,Jeremy Theil,Elizabeth Hartnick,G. Lucovsky	1990	10
15	LOW-TEMPERATURE FORMATION OF HIGH-QUALITY ULTRA-THIN GATE OXIDE BY REMOTE PLASMA-ENHANCED CVD ( REMOTE PECVD ) PROCESS Hyun-Seop Tae,G. Lucovsky	1989	1
16	Defects in a-Si:H films produced by remote plasma enhanced chemical vapor deposition Journal of Non-Crystalline Solids ·Gregory N. Parsons,D. V. Tsu,G. Lucovsky	1989	3
17	Electronic and vibrational properties Springer eBooks ·J. D. Joannopoulos,G. Lucovsky,David Carlson	1984	1
18	The physics of MOS insulators : proceedings of the International Topical Conference on the Physics of MOS Insulators, held at the Jane S. McKimmon Conference Center, North Carolina State University Raleigh, North Carolina, June 18-20, 1980 Pergamon Press eBooks ·G. Lucovsky,Sokrates T. Pantelides,F. L. Galeener	1980	4
19	Detection of Coherent Light by Heterodyne Techniques Using Solid State Photodiodes Quantum Electronics ·G. Lucovsky,R. B. Emmons,Paul Carrillo-Mora,健史牧田	1964	2
20	RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GaAs p-n JUNCTIONS Applied Physics Letters ·G. Lucovsky,十三男今成	1963	17

About G. Lucovsky

G. Lucovsky is a scholar working on Ceramics and Composites, Electrical and Electronic Engineering and Materials Chemistry, having authored 532 papers that have together received 18.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (327 papers), Thin-Film Transistor Technologies (148 papers), Silicon Nanostructures and Photoluminescence (106 papers), Electronic and Structural Properties of Oxides (76 papers), Semiconductor materials and interfaces (68 papers), Phase-change materials and chalcogenides (66 papers), Advancements in Semiconductor Devices and Circuit Design (64 papers) and Silicon and Solar Cell Technologies (53 papers). The work is most often cited by research in Ceramics and Composites (3.0k citations), Materials Chemistry (12.6k citations) and Electrical and Electronic Engineering (13.2k citations). G. Lucovsky has collaborated with scholars based in United States, Germany and South Korea. Frequent co-authors include R. J. Nemanich, F. L. Galeener, J. C. Knights, D. V. Tsu, Robert M. White, Richard M. Martin, M. J. Mantini, R. C. Keezer, S. A. Solin and J. C. Phillips. Their work appears in journals such as Journal of Non-Crystalline Solids, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Applied Surface Science, Microelectronic Engineering and Solid State Communications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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