G. Mavrou

1.1k citations

35 papers · 939 · h-index 18

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides
- Silicon Nanostructures and Photoluminescence

Papers in

Electrical and Electronic Engineering 35
- Semiconductor materials and devices 35
- Advancements in Semiconductor Devices and Circuit Design 12
- Ferroelectric and Negative Capacitance Devices 9
- Advanced Memory and Neural Computing 6
Materials Chemistry 19
- Electronic and Structural Properties of Oxides 16
- Ferroelectric and Piezoelectric Materials 4

Co-authors: A. Dimoulas (35 shared papers)A. Sotiropoulos (15 shared papers)Y. Panayiotatos (17 shared papers)E. K. Evangelou (12 shared papers)S. Galata (17 shared papers)G. Vellianitis (8 shared papers)Polychronis Tsipas (10 shared papers)Dimitra Tsoutsou (7 shared papers)
Journals: Applied Physics Letters (10 papers)Microelectronic Engineering (4 papers)Journal of Applied Physics (4 papers)Materials Science and Engineering B (3 papers)Solid-State Electronics (2 papers)
Partner nations: Greece Belgium Switzerland

In The Last Decade

G. Mavrou

35 papers receiving 914 citations

Peers

Countries citing papers authored by G. Mavrou

Since Specialization

Citations

This map shows the geographic impact of G. Mavrou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Mavrou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Mavrou more than expected).

Fields of papers citing papers by G. Mavrou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Mavrou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Mavrou. The network helps show where G. Mavrou may publish in the future.

Co-authors

The 25 scholars most cited alongside G. Mavrou, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Mavrou Line = papers co-authored together G. Mavrou links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Hf O 2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition Applied Physics Letters ·A. Dimoulas, G. Mavrou, G. Vellianitis, E. K. Evangelou, Nikos Boukos, Michel Houssa, Matty Caymax	2005	127
2	Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices Journal of Applied Physics ·G. Mavrou, S. Galata, Polychronis Tsipas, A. Sotiropoulos, Y. Panayiotatos, A. Dimoulas, E. K. Evangelou, Jin Won Seo, Ch. Dieker	2008	97
3	Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack Applied Physics Letters ·Andrew Ritenour, A. Khakifirooz, D.A. Antoniadis, Rui Lei, Wilman Tsai, A. Dimoulas, G. Mavrou, Y. Panayiotatos	2006	63
4	Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates Applied Physics Letters ·G. Mavrou, Polychronis Tsipas, A. Sotiropoulos, S. Galata, Y. Panayiotatos, A. Dimoulas, Chiara Marchiori, J. Fompeyrine	2008	59
5	Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks Applied Physics Letters ·Polychronis Tsipas, S.N. Volkos, A. Sotiropoulos, S. Galata, G. Mavrou, Dimitra Tsoutsou, Y. Panayiotatos, A. Dimoulas, Chiara Marchiori, J. Fompeyrine	2008	57
6	Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitors Applied Physics Letters ·A. Dimoulas, G. Vellianitis, G. Mavrou, E. K. Evangelou, A. Sotiropoulos	2005	51
7	La 2 Hf 2 O 7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy Applied Physics Letters ·A. Dimoulas, G. Vellianitis, G. Mavrou, Γ. Αποστολόπουλος, A. Travlos, Claudia Wiemer, M. Fanciulli, Z. M. Rittersma	2004	48
8	The role of La surface chemistry in the passivation of Ge Applied Physics Letters ·A. Dimoulas, Dimitra Tsoutsou, Y. Panayiotatos, A. Sotiropoulos, G. Mavrou, S. Galata, Evangelos Golias	2010	47
9	Hf O 2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability Applied Physics Letters ·Jin Won Seo, Ch. Dieker, Jean‐Pierre Locquet, G. Mavrou, A. Dimoulas	2005	41
10	Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition Journal of Applied Physics ·Dimitra Tsoutsou, Γ. Αποστολόπουλος, S. Galata, Polychronis Tsipas, A. Sotiropoulos, G. Mavrou, Y. Panayiotatos, A. Dimoulas, A. Lagoyannis, A. G. Karydas, V. Kantarelou, S. Harissopoulos	2009	33
11	MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement Materials Science and Engineering B ·G. Vellianitis, Γ. Αποστολόπουλος, G. Mavrou, K. Argyropoulos, A. Dimoulas, Jacob C. Hooker, Thierry Conard, M. Butcher	2004	30
12	Band alignment at the La2Hf2O7∕(001)Si interface Applied Physics Letters ·Gabriele Seguini, Sabina Spiga, Emiliano Bonera, M. Fanciulli, A. Reyes Huamantinco, Clemens J. Först, C. Ashman, Peter E. Blöchl, A. Dimoulas, G. Mavrou	2006	28
13	Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium Microelectronic Engineering ·Dimitra Tsoutsou, Γ. Αποστολόπουλος, S. Galata, Polychronis Tsipas, A. Sotiropoulos, G. Mavrou, Y. Panayiotatos, A. Dimoulas	2009	27
14	Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric Microelectronic Engineering ·G. Mavrou, S. Galata, A. Sotiropoulos, Polychronis Tsipas, Y. Panayiotatos, A. Dimoulas, E. K. Evangelou, Jin Won Seo, Ch. Dieker	2007	24
15	Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors Solid-State Electronics ·E. K. Evangelou, G. Mavrou, A. Dimoulas, N. Konofaos	2006	23
16	X-ray absorption study of the growth ofY2O3on Si(001) Physical Review B ·Marco Malvestuto, R. Carboni, F. Boscherini, F. D’Acapito, Sabina Spiga, M. Fanciulli, A. Dimoulas, G. Vellianitis, G. Mavrou	2005	21
17	Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry Journal of Applied Physics ·Dimitra Tsoutsou, Y. Panayiotatos, A. Sotiropoulos, G. Mavrou, Evangelos Golias, S. Galata, A. Dimoulas	2010	21
18	Total Dose Response of Ge MOS Capacitors With HfO$_{2}$/Dy$_{2}$O$_{3}$ Gate Stacks IEEE Transactions on Nuclear Science ·D. K. Chen, Ronald D. Schrimpf, Daniel M. Fleetwood, K.F. Galloway, Sokrates T. Pantelides, A. Dimoulas, G. Mavrou, A. Sotiropoulos, Y. Panayiotatos	2007	21
19	Anomalous charge trapping dynamics in cerium oxide grown on germanium substrate Journal of Applied Physics ·Md. Shahinur Rahman, E. K. Evangelou, A. Dimoulas, G. Mavrou, S. Galata	2008	17
20	Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers Applied Physics Letters ·V. V. Afanas’ev, A. Stesmans, G. Mavrou, A. Dimoulas	2008	14

About G. Mavrou

G. Mavrou is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Ceramics and Composites, having authored 35 papers that have together received 939 indexed citations. Recurring topics across this work include Semiconductor materials and devices (35 papers), Electronic and Structural Properties of Oxides (16 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Advanced Memory and Neural Computing (6 papers), Semiconductor materials and interfaces (6 papers), Copper Interconnects and Reliability (5 papers) and Ferroelectric and Piezoelectric Materials (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (870 citations), Materials Chemistry (492 citations), Atomic and Molecular Physics, and Optics (303 citations), Electronic, Optical and Magnetic Materials (101 citations) and Surfaces, Coatings and Films (19 citations). G. Mavrou has collaborated with scholars based in Greece, Belgium and Switzerland. Frequent co-authors include A. Dimoulas, A. Sotiropoulos, Y. Panayiotatos, E. K. Evangelou, S. Galata, G. Vellianitis, Polychronis Tsipas, Dimitra Tsoutsou, Ch. Dieker and Jin Won Seo. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, Journal of Applied Physics, Materials Science and Engineering B and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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