G. Mavrou

1.1k total citations
35 papers, 939 citations indexed

About

G. Mavrou is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, G. Mavrou has authored 35 papers receiving a total of 939 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in G. Mavrou's work include Semiconductor materials and devices (35 papers), Electronic and Structural Properties of Oxides (16 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). G. Mavrou is often cited by papers focused on Semiconductor materials and devices (35 papers), Electronic and Structural Properties of Oxides (16 papers) and Advancements in Semiconductor Devices and Circuit Design (12 papers). G. Mavrou collaborates with scholars based in Greece, Belgium and Switzerland. G. Mavrou's co-authors include A. Dimoulas, A. Sotiropoulos, Y. Panayiotatos, E. K. Evangelou, S. Galata, G. Vellianitis, Polychronis Tsipas, Dimitra Tsoutsou, Jin Won Seo and Ch. Dieker and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

G. Mavrou

35 papers receiving 914 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Mavrou Greece 18 870 492 303 101 44 35 939
L. Lamagna Italy 18 642 0.7× 468 1.0× 126 0.4× 104 1.0× 57 1.3× 45 729
Laegu Kang United States 12 1.3k 1.4× 509 1.0× 149 0.5× 146 1.4× 43 1.0× 27 1.3k
A. Sotiropoulos Greece 17 1.1k 1.3× 515 1.0× 590 1.9× 95 0.9× 143 3.3× 24 1.2k
Antonio Rotondaro United States 16 927 1.1× 223 0.5× 150 0.5× 75 0.7× 49 1.1× 54 974
J. A. Hallmark United States 11 539 0.6× 448 0.9× 157 0.5× 72 0.7× 40 0.9× 22 641
G. Pourtois Belgium 14 577 0.7× 709 1.4× 349 1.2× 72 0.7× 74 1.7× 20 987
Mohit Raghuwanshi Germany 16 557 0.6× 614 1.2× 161 0.5× 67 0.7× 108 2.5× 32 737
D. Roan United States 14 1.1k 1.2× 417 0.8× 146 0.5× 87 0.9× 24 0.5× 20 1.1k
C. Overgaard United States 14 777 0.9× 699 1.4× 135 0.4× 187 1.9× 60 1.4× 19 905
T. W. Kim South Korea 15 545 0.6× 476 1.0× 283 0.9× 74 0.7× 94 2.1× 65 688

Countries citing papers authored by G. Mavrou

Since Specialization
Citations

This map shows the geographic impact of G. Mavrou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Mavrou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Mavrou more than expected).

Fields of papers citing papers by G. Mavrou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Mavrou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Mavrou. The network helps show where G. Mavrou may publish in the future.

Co-authorship network of co-authors of G. Mavrou

This figure shows the co-authorship network connecting the top 25 collaborators of G. Mavrou. A scholar is included among the top collaborators of G. Mavrou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Mavrou. G. Mavrou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Evangelou, E. K., et al.. (2010). SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress. Solid-State Electronics. 54(9). 979–984. 8 indexed citations
2.
Tsoutsou, Dimitra, Y. Panayiotatos, S. Galata, et al.. (2010). The effect of Se and Se/Al passivation on the oxidation of Ge. Microelectronic Engineering. 88(4). 407–410. 9 indexed citations
3.
Dimoulas, A., Dimitra Tsoutsou, Y. Panayiotatos, et al.. (2010). The role of La surface chemistry in the passivation of Ge. Applied Physics Letters. 96(1). 47 indexed citations
4.
Tsoutsou, Dimitra, Y. Panayiotatos, A. Sotiropoulos, et al.. (2010). Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry. Journal of Applied Physics. 108(6). 21 indexed citations
5.
Evangelou, E. K., Iosif Androulidakis, A. Dimoulas, et al.. (2009). Structural and electrical properties of HfO2/Dy2O3 gate stacks on Ge substrates. Thin Solid Films. 518(14). 3964–3971. 9 indexed citations
6.
Galata, S., G. Mavrou, Polychronis Tsipas, et al.. (2009). Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 246–248. 8 indexed citations
7.
Tsoutsou, Dimitra, Γ. Αποστολόπουλος, S. Galata, et al.. (2009). Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition. Journal of Applied Physics. 106(2). 33 indexed citations
8.
Mavrou, G., S. Galata, Polychronis Tsipas, et al.. (2008). Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices. Journal of Applied Physics. 103(1). 97 indexed citations
9.
Dimoulas, A., Y. Panayiotatos, Polychronis Tsipas, et al.. (2008). Gate Dielectrics for High Mobility Semiconductors. ECS Transactions. 16(5). 295–306. 3 indexed citations
10.
Mavrou, G., Polychronis Tsipas, A. Sotiropoulos, et al.. (2008). Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates. Applied Physics Letters. 93(21). 59 indexed citations
11.
Afanas’ev, V. V., A. Stesmans, G. Mavrou, & A. Dimoulas. (2008). Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers. Applied Physics Letters. 93(10). 14 indexed citations
12.
Tsipas, Polychronis, A. Sotiropoulos, S. Galata, et al.. (2008). Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks. Applied Physics Letters. 93(8). 57 indexed citations
13.
Tsipas, Polychronis, G. Mavrou, A. Sotiropoulos, et al.. (2008). Very High-k Tetragonal ZrO2 on Ge with GeO2 Passivating Interfacial Layer. ECS Transactions. 16(10). 767–772. 1 indexed citations
14.
Houssa, Michel, Thierry Conard, Florence Bellenger, et al.. (2006). Electrical Properties of Atomic-Beam Deposited GeO[sub 1−x]N[sub x]∕HfO[sub 2] Gate Stacks on Ge. Journal of The Electrochemical Society. 153(12). G1112–G1112. 14 indexed citations
15.
Malvestuto, Marco, R. Carboni, F. Boscherini, et al.. (2005). X-ray absorption study of the growth ofY2O3on Si(001). Physical Review B. 71(7). 21 indexed citations
16.
Dimoulas, A., G. Vellianitis, G. Mavrou, E. K. Evangelou, & A. Sotiropoulos. (2005). Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitors. Applied Physics Letters. 86(22). 51 indexed citations
17.
Dimoulas, A., G. Mavrou, G. Vellianitis, et al.. (2005). Hf O 2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition. Applied Physics Letters. 86(3). 127 indexed citations
18.
Seo, Jin Won, Ch. Dieker, Jean‐Pierre Locquet, G. Mavrou, & A. Dimoulas. (2005). Hf O 2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability. Applied Physics Letters. 87(22). 41 indexed citations
19.
Spiga, Sabina, Claudia Wiemer, G. Tallarida, et al.. (2004). Structural characterization of epitaxial Y2O3 on Si (0 0 1) and of the Y2O3/Si interface. Materials Science and Engineering B. 109(1-3). 47–51. 4 indexed citations
20.
Vellianitis, G., Γ. Αποστολόπουλος, G. Mavrou, et al.. (2004). MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement. Materials Science and Engineering B. 109(1-3). 85–88. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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