A.F. Tasch

4.6k total citations
213 papers, 3.5k citations indexed

About

A.F. Tasch is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A.F. Tasch has authored 213 papers receiving a total of 3.5k indexed citations (citations by other indexed papers that have themselves been cited), including 202 papers in Electrical and Electronic Engineering, 54 papers in Atomic and Molecular Physics, and Optics and 48 papers in Materials Chemistry. Recurrent topics in A.F. Tasch's work include Semiconductor materials and devices (137 papers), Advancements in Semiconductor Devices and Circuit Design (87 papers) and Silicon and Solar Cell Technologies (67 papers). A.F. Tasch is often cited by papers focused on Semiconductor materials and devices (137 papers), Advancements in Semiconductor Devices and Circuit Design (87 papers) and Silicon and Solar Cell Technologies (67 papers). A.F. Tasch collaborates with scholars based in United States, Taiwan and Belgium. A.F. Tasch's co-authors include Logan Parker, C.M. Maziar, Sanjay K. Banerjee, S. Jallepalli, K. Klein, B. Anthony, Tsan‐sheng Hsu, T.C. Holloway, S.A. Hareland and Hon Wai Lam and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

A.F. Tasch

198 papers receiving 3.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A.F. Tasch United States 31 3.0k 1.3k 644 627 486 213 3.5k
B. E. Weir United States 30 3.1k 1.0× 776 0.6× 522 0.8× 1.6k 2.5× 149 0.3× 96 3.6k
J.P. McVittie United States 30 2.6k 0.9× 987 0.8× 649 1.0× 517 0.8× 265 0.5× 116 3.3k
Yukinori Morita Japan 26 2.2k 0.7× 736 0.6× 496 0.8× 710 1.1× 103 0.2× 219 2.7k
Judy L. Hoyt United States 36 4.6k 1.5× 767 0.6× 965 1.5× 1.4k 2.2× 108 0.2× 173 4.9k
P. V. Dressendorfer United States 28 4.0k 1.3× 988 0.8× 293 0.5× 440 0.7× 126 0.3× 59 4.4k
E.F. Crabbé United States 23 3.3k 1.1× 1.2k 0.9× 556 0.9× 1.0k 1.6× 125 0.3× 72 3.5k
Chih‐Tang Sah United States 31 4.4k 1.5× 869 0.7× 276 0.4× 1.5k 2.4× 112 0.2× 118 4.7k
E. H. Snow United States 20 3.6k 1.2× 1.1k 0.8× 334 0.5× 1.2k 1.9× 118 0.2× 29 3.9k
F.H. Baumann United States 19 1.7k 0.6× 820 0.7× 262 0.4× 594 0.9× 160 0.3× 86 2.5k
C.A. Spindt United States 21 1.8k 0.6× 1.7k 1.4× 710 1.1× 931 1.5× 293 0.6× 65 2.9k

Countries citing papers authored by A.F. Tasch

Since Specialization
Citations

This map shows the geographic impact of A.F. Tasch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.F. Tasch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.F. Tasch more than expected).

Fields of papers citing papers by A.F. Tasch

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.F. Tasch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.F. Tasch. The network helps show where A.F. Tasch may publish in the future.

Co-authorship network of co-authors of A.F. Tasch

This figure shows the co-authorship network connecting the top 25 collaborators of A.F. Tasch. A scholar is included among the top collaborators of A.F. Tasch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A.F. Tasch. A.F. Tasch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Geng, et al.. (2002). A universal ion implantation model for all species into single-crystal silicon. IEEE Transactions on Electron Devices. 49(9). 1519–1525. 5 indexed citations
2.
Mudanai, S., G. Chindalore, W.-K. Shih, et al.. (1999). Models for electron and hole mobilities in MOS accumulation layers. IEEE Transactions on Electron Devices. 46(8). 1749–1759. 23 indexed citations
3.
Tian, Shijie, Michael F. Morris, Steven J. Morris, et al.. (1998). A detailed physical model for ion implant induced damage in silicon. IEEE Transactions on Electron Devices. 45(6). 1226–1238. 36 indexed citations
4.
Morris, Steven J., et al.. (1996). A Monte Carlo Binary Collision Model for  BF 2 Implants into (100) Single‐Crystal Silicon. Journal of The Electrochemical Society. 143(11). 3784–3790. 5 indexed citations
5.
Steiner, Peter, et al.. (1994). Adaptive temperature program ALE of Si1 − xGex/Si heterostructures from Si2H6/Ge2H6. Applied Surface Science. 82-83. 359–366. 4 indexed citations
6.
Tasch, A.F., et al.. (1994). Experimental observations and modeling of ultra-shallow BF2 and As implants in single-crystal silicon. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(1). 166–171. 8 indexed citations
7.
Magee, C. W., et al.. (1993). High Miller index channeling in silicon substrates. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 74(1-2). 142–146. 6 indexed citations
8.
Qian, Ruizhe, et al.. (1993). Hydrogen Plasma Cleaning of the Si(100) Surface: Removal of Oxygen and Carbon and the Etching of Si. MRS Proceedings. 315(1). 219–224. 1 indexed citations
9.
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11.
Carrano, John C., C. Sudhama, V. Chikarmane, et al.. (1991). Electrical and reliability properties of PZT thin films for ULSI DRAM applications. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 38(6). 690–703. 74 indexed citations
12.
Maziar, C.M., et al.. (1991). An evaluation of energy transport models for silicon device simulation. Solid-State Electronics. 34(6). 617–628. 27 indexed citations
13.
Park, Keeseong, C. S. Kyono, Shuvajit Bhattacharya, et al.. (1989). Rapid thermal annealing for H passivation of polysilicon MOSFETs from Si3N4 overcoat. 455–458. 2 indexed citations
14.
Tasch, A.F., et al.. (1989). Accurate profile simulation parameters in BF/sub 2/ implants in pre-amorphized silicon. IEEE Transactions on Electron Devices. 36(1). 149–152. 1 indexed citations
15.
Holloway, T.C., et al.. (1982). Composite TiSi2/n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology. IEEE Transactions on Electron Devices. 29(4). 547–553. 19 indexed citations
16.
Lam, Hon Wai, A.F. Tasch, & T.C. Holloway. (1980). Characteristics of MOSFETs fabricated in laser-recrystallized polysilicon islands with a retaining wall structure on an insulating substrate. IEEE Electron Device Letters. 1(10). 206–208. 38 indexed citations
17.
Tasch, A.F., et al.. (1979). Silicon-on-insulator m.o.s.f.e.t.s fabricated on laser-annealed polysilicon on SiO 2. Electronics Letters. 15(14). 435–437. 35 indexed citations
18.
Buss, D.D., William H. Bailey, R.W. Brodersen, C. R. Hewes, & A.F. Tasch. (1975). Applications of charge-coupled device transversal filters to communication. International Conference on Communications. 1. 1 indexed citations
19.
Tasch, A.F., H.-S. Fu, & R.C. Frye. (1975). The charge-coupled RAM cell—A new MOS dynamic RAM cell simpler than the one-transistor cell. 21. 7–8. 2 indexed citations
20.
Buss, D.D., R.W. Brodersen, C. R. Hewes, & A.F. Tasch. (1975). Communication applications of CCD transversal filters. 1. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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