H. Tews

586 total citations
39 papers, 457 citations indexed

About

H. Tews is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, H. Tews has authored 39 papers receiving a total of 457 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Atomic and Molecular Physics, and Optics, 31 papers in Electrical and Electronic Engineering and 12 papers in Condensed Matter Physics. Recurrent topics in H. Tews's work include Semiconductor Quantum Structures and Devices (31 papers), GaN-based semiconductor devices and materials (12 papers) and Semiconductor materials and devices (11 papers). H. Tews is often cited by papers focused on Semiconductor Quantum Structures and Devices (31 papers), GaN-based semiconductor devices and materials (12 papers) and Semiconductor materials and devices (11 papers). H. Tews collaborates with scholars based in Germany, France and United States. H. Tews's co-authors include H. Venghaus, P. Dean, H. Riechert, R. Averbeck, M. Schienle, Warren S. Rehm, D. W. Kisker, Matthias Schneider, R. Neumann and G. Cohen‐Solal and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H. Tews

38 papers receiving 436 citations

Peers

H. Tews

EEE

AMPO

MC

CMP

EOMM

G. F. McLane United States

T. Wethkamp Germany

D. Eisert Germany

K. Ando Japan

M. L. Lovejoy United States

K. Haberland Germany

H.‐J. Bühlmann Switzerland

D. S. Poloskin Russia

H.H. Yao Taiwan

H. Protzmann Germany

G. F. McLane United States

H. Tews

287 ×0.9

EEE

143 ×0.5

AMPO

152 ×0.9

MC

91 ×0.5

CMP

62 ×0.9

EOMM

Citations per year, relative to H. Tews H. Tews (= 1×) peers G. F. McLane

Countries citing papers authored by H. Tews

Since Specialization

Citations

This map shows the geographic impact of H. Tews's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Tews with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Tews more than expected).

Fields of papers citing papers by H. Tews

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Tews. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Tews. The network helps show where H. Tews may publish in the future.

Co-authorship network of co-authors of H. Tews

This figure shows the co-authorship network connecting the top 25 collaborators of H. Tews. A scholar is included among the top collaborators of H. Tews based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Tews. H. Tews is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

McStay, K., D. Chidambarrao, J. Mandelman, et al.. (2003). Vertical pass transistor design for sub-100 nm DRAM technologies. 180–181. 2 indexed citations

2.

Murthy, Ch. S. N., R. Rengarajan, O. Dokumaci, et al.. (2002). Nitrogen-induced transient enhanced diffusion of dopants. Applied Physics Letters. 80(15). 2696–2698. 7 indexed citations

3.

Averbeck, R., et al.. (1998). GaN-based LEDs grown by molecular beam epitaxy. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3279. 28–28. 5 indexed citations

4.

Ramsteiner, M., et al.. (1998). Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate. Applied Physics Letters. 72(3). 365–367. 14 indexed citations

5.

Strauß, Uwe, H. Tews, H. Riechert, et al.. (1997). Structural and optical analysis of epitaxial GaN on sapphire. Semiconductor Science and Technology. 12(5). 637–644. 5 indexed citations

6.

Tews, H., et al.. (1996). Blue and green electroluminescence from MBE grownGaN/InGaN heterostructures. Electronics Letters. 32(21). 2004–2006. 23 indexed citations

7.

Tews, H., et al.. (1991). High frequency AlGaAs/GaAs heterojunction bipolar transistors: the role of MOVPE. Journal of Crystal Growth. 107(1-4). 883–892. 1 indexed citations

8.

Tews, H., et al.. (1990). Photoluminescence in GaAs/AlGaAs heterojunction bipolar transistors: An investigation of the properties of the Mg acceptor. Journal of Applied Physics. 68(3). 1310–1317. 6 indexed citations

9.

Tews, H. & R. Neumann. (1990). High temperature rapid thermal annealing of Mg in GaAs. Semiconductor Science and Technology. 5(7). 649–652. 1 indexed citations

10.

Treichler, R., et al.. (1989). Implantation-induced diffusion of Zn and Be in GaAs/AlGaAs heterostructures. Journal of Applied Physics. 66(1). 181–186. 7 indexed citations

11.

Tews, H., et al.. (1989). Nonequivalent heterointerfaces in AlGaAs/GaAs double barrier resonant tunnelling diodes grown by metalorganic vapour phase epitaxy. Electronics Letters. 25(25). 1709–1711. 7 indexed citations

12.

Kisker, D. W., H. Tews, & Warren S. Rehm. (1983). Luminescence study of C, Zn, Si, and Ge acceptors in GaAs. Journal of Applied Physics. 54(3). 1332–1336. 30 indexed citations

13.

Schneider, Matthias, H. Tews, & R. Legros. (1982). Oxygen diffusion in ZnTe during laser annealing. Journal of Crystal Growth. 59(1-2). 293–296. 4 indexed citations

14.

Tews, H. & G. Neu. (1982). Donor-induced acceptor-state splittings in ZnSe. Physical review. B, Condensed matter. 25(2). 1253–1259. 3 indexed citations

15.

Tews, H., et al.. (1982). Ohmic contacts to p-type CdTe by pulsed laser heating. Journal of Crystal Growth. 59(1-2). 289–292. 20 indexed citations

16.

Tews, H., et al.. (1982). Laser-induced diffusion of oxygen in ZnTe. Applied Physics Letters. 40(1). 41–43. 11 indexed citations

17.

Tews, H.. (1981). Zeeman study of donor-acceptor pairs in ZnTe. Physical review. B, Condensed matter. 23(2). 587–596. 7 indexed citations

18.

Tews, H., et al.. (1981). Photoluminescence of ZnS_xSe_1-xepilayers and single crystals. IEEE Transactions on Electron Devices. 28(4). 436–439. 4 indexed citations

19.

Tews, H. & H. Venghaus. (1979). Selective pair luminescence in semiconductors. Solid State Communications. 30(4). 219–221. 30 indexed citations

20.

Tews, H.. (1978). Hartree calculations for n-inversion layers on stressed silicon surfaces. Solid State Communications. 26(6). 349–352. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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