W. Bergner

494 total citations
17 papers, 272 citations indexed

About

W. Bergner is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Ceramics and Composites. According to data from OpenAlex, W. Bergner has authored 17 papers receiving a total of 272 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Ceramics and Composites. Recurrent topics in W. Bergner's work include Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Silicon Carbide Semiconductor Technologies (8 papers). W. Bergner is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (12 papers), Semiconductor materials and devices (12 papers) and Silicon Carbide Semiconductor Technologies (8 papers). W. Bergner collaborates with scholars based in Germany, Austria and United States. W. Bergner's co-authors include Thomas Aichinger, Thomas Basler, Dethard Peters, Romain Esteve, Ralf Siemieniec, Lorenz Risch, Roland Rupp, Regine Mallwitz, M. Kunze and Wolfgang Mueller and has published in prestigious journals such as Japanese Journal of Applied Physics, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems and Materials science forum.

In The Last Decade

W. Bergner

16 papers receiving 269 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W. Bergner Germany	7	261	22	16	15	9	17	272
P.M. Shenoy United States	8	279 1.1×	37 1.7×	11 0.7×	14 0.9×	10 1.1×	17	286
G. Dolny United States	8	314 1.2×	17 0.8×	23 1.4×	9 0.6×	11 1.2×	25	320
Josef Štengl Germany	4	330 1.3×	28 1.3×	28 1.8×	10 0.7×	4 0.4×	9	336
Bo Yi China	11	320 1.2×	21 1.0×	27 1.7×	26 1.7×	17 1.9×	74	337
Phil Rutter United Kingdom	9	426 1.6×	21 1.0×	24 1.5×	24 1.6×	11 1.2×	15	433
Haimeng Huang China	12	333 1.3×	29 1.3×	29 1.8×	25 1.7×	22 2.4×	59	374
Xintian Zhou China	11	518 2.0×	36 1.6×	14 0.9×	14 0.9×	8 0.9×	41	522
Junji Cheng China	12	304 1.2×	28 1.3×	26 1.6×	31 2.1×	22 2.4×	62	329
Roozbeh Bonyadi United Kingdom	7	402 1.5×	17 0.8×	15 0.9×	7 0.5×	4 0.4×	16	407
A. Matt Francis United States	9	325 1.2×	8 0.4×	11 0.7×	8 0.5×	8 0.9×	12	328

Countries citing papers authored by W. Bergner

Since Specialization

Citations

This map shows the geographic impact of W. Bergner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Bergner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Bergner more than expected).

Fields of papers citing papers by W. Bergner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Bergner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Bergner. The network helps show where W. Bergner may publish in the future.

Co-authorship network of co-authors of W. Bergner

This figure shows the co-authorship network connecting the top 25 collaborators of W. Bergner. A scholar is included among the top collaborators of W. Bergner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Bergner. W. Bergner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

1.

Peters, Dethard, Ralf Siemieniec, Thomas Aichinger, et al.. (2017). Performance and ruggedness of 1200V SiC — Trench — MOSFET. 239–242. 114 indexed citations

2.

Siemieniec, Ralf, Dethard Peters, Romain Esteve, et al.. (2017). A SiC Trench MOSFET concept offering improved channel mobility and high reliability. P.1–P.13. 56 indexed citations

3.

Peters, Dethard, Thomas Basler, Thomas Aichinger, et al.. (2017). The New CoolSiC™ Trench MOSFET Technology for Low Gate Oxide Stress and High Performance. 1–7. 22 indexed citations

4.

Peters, Dethard, et al.. (2017). 1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance. Materials science forum. 897. 489–492. 19 indexed citations

5.

Mallwitz, Regine, et al.. (2014). GaN Power Semiconductors for PV Inverter Applications ¿ Opportunities and Risks. 1–6. 14 indexed citations

6.

Bergner, W., et al.. (2014). 650V SiC JFET for High Efficiency Applications. Materials science forum. 778-780. 871–874.

7.

Mueller, Wolfgang, G. Aichmayr, W. Bergner, et al.. (2006). Trench DRAM Technologies for the 50nm Node and Beyond. 1–2. 4 indexed citations

8.

Chidambarrao, D., K. McStay, R. Divakaruni, et al.. (2004). On the retention time distribution of dual-channel vertical DRAM technologies. 243–246. 2 indexed citations

9.

McStay, K., D. Chidambarrao, J. Mandelman, et al.. (2003). Vertical pass transistor design for sub-100 nm DRAM technologies. 180–181. 2 indexed citations

10.

Gluschenkov, Oleg, Bin He, Yujun Li, et al.. (2002). High performance single work-function tungsten gate CMOS devices for gigabit DRAM. 3.3.1–3.3.4. 3 indexed citations

11.

Malik, R., L. A. Clevenger, Oleg Gluschenkov, et al.. (2002). W/WN/poly gate implementation for sub-130 nm vertical cell DRAM. 31–32. 2 indexed citations

12.

Schwerin, A. v., et al.. (2002). Simulation of amplified gate-induced-drain-leakage (GIDL) in short-channel SOI MOSFETs. 7–10. 2 indexed citations

13.

Bergner, W., et al.. (1991). Three-Dimensional Simulation of Semiconductor Devices. Birkhäuser Basel eBooks. 11 indexed citations

14.

Bergner, W., et al.. (1990). Modeling of Band-to-Band Tunneling Mechanisms. 4 indexed citations

15.

Bergner, W., et al.. (1990). SITAR-an efficient 3-D simulator for optimization of nonplanar trench structures. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 9(11). 1184–1188. 5 indexed citations

16.

Risch, Lorenz, et al.. (1988). Charge Losses of N-Doped Trench Cells. Japanese Journal of Applied Physics. 27(11A). L2223–L2223. 8 indexed citations

17.

Risch, Lorenz, et al.. (1988). Charge Losses of n-Doped Trench Cells. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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