Pushkara R. Varanasi

547 total citations
39 papers, 467 citations indexed

About

Pushkara R. Varanasi is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Pushkara R. Varanasi has authored 39 papers receiving a total of 467 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 24 papers in Biomedical Engineering and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Pushkara R. Varanasi's work include Advancements in Photolithography Techniques (33 papers), Nanofabrication and Lithography Techniques (17 papers) and 3D IC and TSV technologies (13 papers). Pushkara R. Varanasi is often cited by papers focused on Advancements in Photolithography Techniques (33 papers), Nanofabrication and Lithography Techniques (17 papers) and 3D IC and TSV technologies (13 papers). Pushkara R. Varanasi collaborates with scholars based in United States, Japan and India. Pushkara R. Varanasi's co-authors include Irishi N. N. Namboothiri, Jayaraman Chandrasekhar, Alex K.‐Y. Jen, A. Rathna, Robert D. Allen, Wu‐Song Huang, Hoa D. Truong, Wenjie Li, Hiroshi Itô and George M. Jordhamo and has published in prestigious journals such as Journal of the American Chemical Society, IBM Journal of Research and Development and Polymers for Advanced Technologies.

In The Last Decade

Pushkara R. Varanasi

36 papers receiving 443 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Pushkara R. Varanasi United States	10	215	185	183	161	137	39	467
Nicholas J. Clecak United States	12	115 0.5×	246 1.3×	151 0.8×	135 0.8×	127 0.9×	30	498
Donghong Gu China	14	95 0.4×	101 0.5×	122 0.7×	267 1.7×	91 0.7×	44	424
S. Anandhi India	16	226 1.1×	251 1.4×	102 0.6×	321 2.0×	87 0.6×	37	599
S. Taboukhat France	14	229 1.1×	68 0.4×	169 0.9×	248 1.5×	92 0.7×	30	452
I. Yu. Denisyuk Russia	10	102 0.5×	103 0.6×	116 0.6×	126 0.8×	75 0.5×	81	357
Shinji Tarutani Japan	13	97 0.5×	456 2.5×	207 1.1×	93 0.6×	87 0.6×	50	573
Lydia Sosa‐Vargas France	13	118 0.5×	220 1.2×	120 0.7×	294 1.8×	89 0.6×	31	508
P. T. Anusha India	13	133 0.6×	78 0.4×	272 1.5×	334 2.1×	43 0.3×	24	466
Christoph Hunziker Switzerland	12	192 0.9×	251 1.4×	101 0.6×	129 0.8×	39 0.3×	18	441

Countries citing papers authored by Pushkara R. Varanasi

Since Specialization

Citations

This map shows the geographic impact of Pushkara R. Varanasi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Pushkara R. Varanasi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Pushkara R. Varanasi more than expected).

Fields of papers citing papers by Pushkara R. Varanasi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Pushkara R. Varanasi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Pushkara R. Varanasi. The network helps show where Pushkara R. Varanasi may publish in the future.

Co-authorship network of co-authors of Pushkara R. Varanasi

This figure shows the co-authorship network connecting the top 25 collaborators of Pushkara R. Varanasi. A scholar is included among the top collaborators of Pushkara R. Varanasi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Pushkara R. Varanasi. Pushkara R. Varanasi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Iyer, Subramanian S., G. Freeman, A. Chou, et al.. (2011). 45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications. IBM Journal of Research and Development. 55(3). 5:1–5:14. 13 indexed citations

Cameron, James F., et al.. (2010). Design and development of production-worthy developable BARCs(DBARCs) for implant lithography. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7639. 76390H–76390H. 1 indexed citations

Cameron, James F., Gregory Prokopowicz, Kevin Ε. Ο'Shea, et al.. (2009). Progress towards production worthy developable BARCs (DBARCs). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7273. 72733L–72733L. 2 indexed citations

Huang, Wu‐Song, et al.. (2008). Resist freezing process for double exposure lithography. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6923. 69230G–69230G. 19 indexed citations

Sooriyakumaran, Ratnam, Richard A. DiPietro, Phillip J. Brock, et al.. (2008). A new class of low bake resists for 193-nm immersion lithography. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6923. 69230C–69230C. 3 indexed citations

Varanasi, Pushkara R., Linda K. Sundberg, Chris Robinson, et al.. (2007). Building an immersion topcoat from the ground up: materials perspective. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6519. 651907–651907. 4 indexed citations

Varanasi, Pushkara R., Krishna Kumar Patel, Robert D. Allen, et al.. (2005). Fluoroalcohol-Methacrylate Resists for 193nm Lithography. Journal of Photopolymer Science and Technology. 18(3). 381–387. 3 indexed citations

Sooriyakumaran, Ratnam, Carl E. Larson, Phillip J. Brock, et al.. (2004). 193-nm negative resist based on acid-catalyzed elimination of polar molecules. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5376. 71–71.

Varanasi, Pushkara R., et al.. (2003). High-performance 193-nm photoresist materials based on a new class of polymers containing spaced ester finctionalities. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5039. 187–187. 4 indexed citations

10.

Li, Wenjie, Pushkara R. Varanasi, Kuang‐Jung Chen, et al.. (2003). Rational design in cyclic olefin resists for sub-100-nm lithography. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5039. 61–61. 10 indexed citations

11.

Brunsvold, William R., et al.. (2001). ArF resist for contact hole application. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4345. 791–791.

12.

Kajita, Toru, Yukio Nishimura, Masafumi Yamamoto, et al.. (2001). 193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4345. 712–712. 6 indexed citations

13.

Varanasi, Pushkara R., George M. Jordhamo, Arpan P. Mahorowala, et al.. (2001). IBM 193-nm bilayer resist: materials, lithographic performance, and optimization. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4345. 50–50. 5 indexed citations

14.

Varanasi, Pushkara R., et al.. (2000). Polymers Containing Etch Resistant Ether Protecting Groups for DUV Lithography.. Journal of Photopolymer Science and Technology. 13(4). 645–649. 1 indexed citations

15.

Itô, Hiroshi, Robert D. Allen, Thomas I. Wallow, et al.. (2000). Dissolution/swelling behavior of cycloolefin polymers in aqueous base. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3999. 2–2. 11 indexed citations

16.

Allen, Robert D., Hiroshi Itô, Thomas I. Wallow, et al.. (1999). Cyclic Olefin Resist Polymers and Polymerizations for Improved Etch Resistance.. Journal of Photopolymer Science and Technology. 12(3). 501–507. 3 indexed citations

17.

Varanasi, Pushkara R., George M. Jordhamo, Robert D. Allen, et al.. (1999). IBM 193nm Semiconductor Resist: Material Properties, Resist Characteristics and Lithographic Performance.. Journal of Photopolymer Science and Technology. 12(3). 493–500. 10 indexed citations

18.

Varanasi, Pushkara R., et al.. (1999). Important role of hydroxyethyl derivatives of poly(hydroxystyrene) in the development of advanced negative resists. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3678. 1246–1246. 1 indexed citations

19.

Brunsvold, William R., et al.. (1997). PHS with inert blocking groups for DUV negative resist. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3049. 372–372. 3 indexed citations

20.

Varanasi, Pushkara R., Alex K.‐Y. Jen, Jayaraman Chandrasekhar, Irishi N. N. Namboothiri, & A. Rathna. (1996). The Important Role of Heteroaromatics in the Design of Efficient Second-Order Nonlinear Optical Molecules: Theoretical Investigation on Push−Pull Heteroaromatic Stilbenes. Journal of the American Chemical Society. 118(49). 12443–12448. 263 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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