J.H. Sim

880 total citations
45 papers, 707 citations indexed

About

J.H. Sim is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J.H. Sim has authored 45 papers receiving a total of 707 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in J.H. Sim's work include Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Ferroelectric and Negative Capacitance Devices (17 papers). J.H. Sim is often cited by papers focused on Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Ferroelectric and Negative Capacitance Devices (17 papers). J.H. Sim collaborates with scholars based in United States, United Kingdom and Australia. J.H. Sim's co-authors include G. Bersuker, Rino Choi, Chadwin D. Young, Byoung Hun Lee, Dim‐Lee Kwong, George Brown, H.C. Wen, J.P. Lu, Chang Seo Park and P. Zeitzoff and has published in prestigious journals such as Applied Physics Letters, Langmuir and IEEE Transactions on Electron Devices.

In The Last Decade

J.H. Sim

43 papers receiving 648 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.H. Sim United States	15	693	126	75	39	20	45	707
Tsunehiro Ino Japan	11	447 0.6×	152 1.2×	80 1.1×	44 1.1×	19 0.9×	27	487
Paul Vande Voorde United States	11	537 0.8×	84 0.7×	103 1.4×	24 0.6×	29 1.4×	25	555
Masato Koyama Japan	10	312 0.5×	121 1.0×	57 0.8×	41 1.1×	21 1.1×	46	339
P. Jamison United States	13	529 0.8×	100 0.8×	58 0.8×	28 0.7×	43 2.1×	39	544
L.B. La United States	7	399 0.6×	170 1.3×	48 0.6×	42 1.1×	10 0.5×	13	413
Alessandro Callegari United States	7	355 0.5×	72 0.6×	88 1.2×	19 0.5×	25 1.3×	12	380
Injo Ok United States	14	537 0.8×	140 1.1×	199 2.7×	24 0.6×	37 1.9×	49	551
V. Dhandapani United States	6	555 0.8×	128 1.0×	114 1.5×	43 1.1×	20 1.0×	10	575
M. Bude United States	4	392 0.6×	217 1.7×	42 0.6×	55 1.4×	12 0.6×	5	409
Y. Ma United States	9	307 0.4×	147 1.2×	37 0.5×	37 0.9×	13 0.7×	17	320

Countries citing papers authored by J.H. Sim

Since Specialization

Citations

This map shows the geographic impact of J.H. Sim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.H. Sim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.H. Sim more than expected).

Fields of papers citing papers by J.H. Sim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.H. Sim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.H. Sim. The network helps show where J.H. Sim may publish in the future.

Co-authorship network of co-authors of J.H. Sim

This figure shows the co-authorship network connecting the top 25 collaborators of J.H. Sim. A scholar is included among the top collaborators of J.H. Sim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.H. Sim. J.H. Sim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zamdmer, N., K. Onishi, D. Chidambarrao, et al.. (2023). Design and Analysis of Discrete FET Monitors in 7nm FinFET Product for Robust Technology Validation. 1–3.

Zhang, Kan, et al.. (2016). Inline electrical yield versus optical inspection: Correlations, connections and disconnections. 451–455.

Zhang, Kan, et al.. (2014). The importance of reporting both composite and maze yield for process split yield learning. 21–25. 1 indexed citations

Young, Chadwin D., Dawei Heh, Rino Choi, et al.. (2006). Detection of TRAP Generation in High-K Gate Stacks. 43. 79–83. 2 indexed citations

Sim, J.H., et al.. (2005). Hot carrier degradation of HfSiON gate dielectrics with TiN electrode. IEEE Transactions on Device and Materials Reliability. 5(2). 177–182. 36 indexed citations

Sim, J.H., Rino Choi, Byoung Hun Lee, et al.. (2005). Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode. Japanese Journal of Applied Physics. 44(4S). 2420–2420. 15 indexed citations

Sim, J.H., Sook‐Keun Song, P. D. Kirsch, et al.. (2005). Effects of ALD HfO2 thickness on charge trapping and mobility. Microelectronic Engineering. 80. 218–221. 54 indexed citations

Bersuker, G., P. Zeitzoff, J.H. Sim, et al.. (2005). Mobility evaluation in transistors with charge-trapping gate dielectrics. Applied Physics Letters. 87(4). 32 indexed citations

Bersuker, G., P. Zeitzoff, J.H. Sim, et al.. (2005). Mobility evaluation in high-K devices. 141–144. 5 indexed citations

10.

Kirsch, P. D., J.H. Sim, S. Krishnan, et al.. (2005). Mobility enhancement of high-k gate stacks through reduced transient charging. 367–370. 14 indexed citations

11.

Lee, Byoung Hun, et al.. (2004). Transient charging and relaxation in high-k gate dielectrics and its implications. 1 indexed citations

12.

Bersuker, G., J.H. Sim, Chadwin D. Young, et al.. (2004). Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance. MRS Proceedings. 811. 25 indexed citations

13.

Sim, J.H., Rino Choi, Byoung Hun Lee, et al.. (2004). Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode. 3 indexed citations

14.

Young, Chadwin D., G. Bersuker, Jeff J. Peterson, et al.. (2004). Probing stress effects in HfO2 gate stacks with time dependent measurements. Microelectronics Reliability. 45(5-6). 806–810. 10 indexed citations

15.

Young, Chadwin D., Byoung Hun Lee, K. Matthews, et al.. (2004). Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-κ Devices. 5 indexed citations

16.

Lee, Byoung Hun, et al.. (2004). Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs. 691–692. 11 indexed citations

17.

Sim, J.H., H.C. Wen, J.P. Lu, & Dim‐Lee Kwong. (2003). Dual work function metal gates using full nickel silicidation of doped poly-Si. IEEE Electron Device Letters. 24(10). 631–633. 51 indexed citations

18.

Bae, Sang‐Hoon, J.H. Sim, Xiaoyi Lei, et al.. (2003). Self-aligned ultra thin HfO/sub 2/ CMOS transistors with high quality CVD TaN gate electrode. 82–83. 10 indexed citations

19.

Choi, Chang‐Hwan, Se Jong Rhee, T.S. Jeon, et al.. (2003). Thermally stable CVD HfO/sub x/N/sub y/ advanced gate dielectrics with poly-Si gate electrode. 857–860. 48 indexed citations

20.

Sim, J.H., et al.. (2002). Thermal Reactions of 2-Naphthalenethiol Adsorbed on Ag(111). Langmuir. 18(8). 3159–3166. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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