M. Arienzo

620 total citations
31 papers, 478 citations indexed

About

M. Arienzo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Arienzo has authored 31 papers receiving a total of 478 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Arienzo's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Silicon Nanostructures and Photoluminescence (11 papers). M. Arienzo is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Silicon Nanostructures and Photoluminescence (11 papers). M. Arienzo collaborates with scholars based in United States, France and Italy. M. Arienzo's co-authors include A. Neugroschel, J.M.C. Stork, Y. Komem, Swaminathan P. Iyer, E. de Frésart, R. Isaac, C. Y. Wong, F.A. Lindholm, P. A. Iles and L. Dori and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

M. Arienzo

30 papers receiving 458 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Arienzo United States	12	436	190	175	32	22	31	478
W. Kissinger Germany	13	369 0.8×	139 0.7×	264 1.5×	72 2.3×	36 1.6×	33	430
P. Warren France	13	457 1.0×	270 1.4×	195 1.1×	48 1.5×	11 0.5×	40	485
D. K. Sadana United States	12	421 1.0×	193 1.0×	109 0.6×	55 1.7×	19 0.9×	36	455
Masamichi Okamura Japan	11	363 0.8×	237 1.2×	95 0.5×	31 1.0×	24 1.1×	22	379
Steven C. Shatas United States	10	400 0.9×	145 0.8×	144 0.8×	39 1.2×	43 2.0×	26	445
Yoshihiro Todokoro Japan	11	451 1.0×	130 0.7×	209 1.2×	76 2.4×	29 1.3×	39	493
C.H. Ling Singapore	14	585 1.3×	95 0.5×	124 0.7×	27 0.8×	32 1.5×	77	614
E. Klausmann Germany	9	543 1.2×	413 2.2×	111 0.6×	14 0.4×	16 0.7×	13	576
T. J. Grasby United Kingdom	15	464 1.1×	224 1.2×	92 0.5×	61 1.9×	14 0.6×	28	512
C. J. Varker United States	10	372 0.9×	104 0.5×	101 0.6×	44 1.4×	47 2.1×	26	413

Countries citing papers authored by M. Arienzo

Since Specialization

Citations

This map shows the geographic impact of M. Arienzo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Arienzo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Arienzo more than expected).

Fields of papers citing papers by M. Arienzo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Arienzo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Arienzo. The network helps show where M. Arienzo may publish in the future.

Co-authorship network of co-authors of M. Arienzo

This figure shows the co-authorship network connecting the top 25 collaborators of M. Arienzo. A scholar is included among the top collaborators of M. Arienzo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Arienzo. M. Arienzo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Conde, J. P., K. Chan, J. M. Blum, et al.. (1993). Annealing kinetics of a-Si:H deposited by concentric-electrode rf glow discharge at room temperature. Journal of Applied Physics. 73(4). 1826–1831. 4 indexed citations

Arienzo, M., J.H. Comfort, E.F. Crabbé, et al.. (1992). SiGe Heterojunctions Transistors and Optoelectronic Devices. MRS Proceedings. 281. 2 indexed citations

Conde, J. P., et al.. (1992). Deposition of amorphous silicon using a tubular reactor with concentric-electrode confinement. Journal of Applied Physics. 71(8). 3981–3989. 12 indexed citations

Arienzo, M., J.H. Comfort, E.F. Crabbé, et al.. (1991). SiGe Heterojunction Bipolar Transistors. MRS Proceedings. 220. 9 indexed citations

Arienzo, M., et al.. (1991). Silicon Nitride in Semiconductor Device Technology. Materials science forum. 47. 228–248. 7 indexed citations

Dori, L., et al.. (1990). Avalanche electron injection in 4-nm Si/sub 3/N/sub 4//8-nm SiO/sub 2/ dielectric structure: turn-around phenomenon and Si-SiO/sub 2/ interface degradation. IEEE Transactions on Electron Devices. 37(1). 177–182. 7 indexed citations

Iyer, Swaminathan P., M. Arienzo, & E. de Frésart. (1990). Low-temperature silicon cleaning via hydrogen passivation and conditions for epitaxy. Applied Physics Letters. 57(9). 893–895. 66 indexed citations

Dori, L., et al.. (1990). Sputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technology. Thin Solid Films. 193-194. 501–510. 7 indexed citations

Dori, L., et al.. (1987). Very Thin Nitride/Oxide Composite Gate Insulator for VLSI CMOS. Symposium on VLSI Technology. 25–26. 8 indexed citations

10.

Harame, D.L., et al.. (1987). Electrical characteristics of diodes fabricated in selective-epitaxial silicon wells. Solid-State Electronics. 30(9). 907–912. 6 indexed citations

11.

Dori, L., et al.. (1987). Electron avalanche injection on 10-nm dielectric films. Journal of Applied Physics. 61(5). 1910–1915. 7 indexed citations

12.

DiMaria, D. J., Massimo V. Fischetti, M. Arienzo, & E. Tierney. (1986). Electron heating studies in silicon dioxide: Low fields and thick films. Journal of Applied Physics. 60(5). 1719–1726. 36 indexed citations

13.

Arienzo, M., et al.. (1986). Effect of post-oxidation anneal on ultrathin SiO2 gate oxides. Applied Physics Letters. 49(16). 1040–1042. 13 indexed citations

14.

Lindholm, F.A., A. Neugroschel, P. A. Iles, & M. Arienzo. (1985). Front and back polysilicon-contacted silicon solar cells. 1003–1007.

15.

Lindholm, F.A., A. Neugroschel, M. Arienzo, & P. A. Iles. (1985). Heavily doped polysilicon-contact solar cells. IEEE Electron Device Letters. 6(7). 363–365. 49 indexed citations

16.

Stork, J.M.C., C. Y. Wong, & M. Arienzo. (1985). Polysilicon Emitter Resistance and Carrier Transport Studies. 44–45. 11 indexed citations

17.

Neugroschel, A., M. Arienzo, Y. Komem, & R. Isaac. (1985). Experimental study of the minority-carrier transport at the polysilicon—monosilicon interface. IEEE Transactions on Electron Devices. 32(4). 807–816. 68 indexed citations

18.

Arienzo, M., Y. Komem, & A. E. Michel. (1984). Diffusion of arsenic in bilayer polycrystalline silicon films. Journal of Applied Physics. 55(2). 365–369. 21 indexed citations

19.

Arienzo, M., et al.. (1982). Investigation of polycrystalline silicon back surface field solar cells. IEEE Transactions on Electron Devices. 29(8). 1151–1155. 7 indexed citations

20.

Arienzo, M. & J. J. Loferski. (1978). Investigation of potentially high efficiency photovoltaic cells consisting of two heterojunctions on a common wide band gap semiconductor base. pvsp. 898–903. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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