B. Daudin

9.2k total citations
321 papers, 7.4k citations indexed

About

B. Daudin is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, B. Daudin has authored 321 papers receiving a total of 7.4k indexed citations (citations by other indexed papers that have themselves been cited), including 259 papers in Condensed Matter Physics, 126 papers in Atomic and Molecular Physics, and Optics and 113 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in B. Daudin's work include GaN-based semiconductor devices and materials (255 papers), Ga2O3 and related materials (108 papers) and Semiconductor Quantum Structures and Devices (107 papers). B. Daudin is often cited by papers focused on GaN-based semiconductor devices and materials (255 papers), Ga2O3 and related materials (108 papers) and Semiconductor Quantum Structures and Devices (107 papers). B. Daudin collaborates with scholars based in France, Spain and Japan. B. Daudin's co-authors include Jean‐Luc Rouvière, G. Feuillet, F. Widmann, Christoph Adelmann, N. T. Pelekanos, M. Arléry, Catherine Bougerol, E. Monroy, H. Mariette and B. Gayral and has published in prestigious journals such as Nano Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

B. Daudin

318 papers receiving 7.3k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
B. Daudin 5.7k 3.4k 2.8k 2.7k 2.1k 321 7.4k
T. D. Moustakas 6.4k 1.1× 4.3k 1.3× 2.7k 1.0× 3.2k 1.2× 3.5k 1.7× 224 9.0k
A. Trampert 6.0k 1.1× 5.7k 1.7× 3.8k 1.4× 3.9k 1.4× 3.3k 1.5× 369 10.3k
Menno J. Kappers 5.5k 1.0× 2.8k 0.8× 2.6k 0.9× 2.2k 0.8× 2.5k 1.2× 311 7.0k
T. Suski 8.1k 1.4× 4.2k 1.2× 3.7k 1.3× 3.6k 1.3× 3.9k 1.8× 455 10.1k
B. Beaumont 5.2k 0.9× 2.6k 0.8× 1.7k 0.6× 2.9k 1.1× 2.7k 1.3× 229 6.2k
S. Strite 4.6k 0.8× 2.5k 0.7× 2.5k 0.9× 2.1k 0.7× 3.4k 1.6× 48 6.9k
N. M. Johnson 5.1k 0.9× 3.3k 1.0× 3.1k 1.1× 2.6k 0.9× 4.7k 2.2× 228 8.7k
O. Brandt 7.9k 1.4× 5.8k 1.7× 4.2k 1.5× 4.4k 1.6× 3.6k 1.7× 380 11.4k
Nobuhiko Sawaki 6.0k 1.0× 3.0k 0.9× 2.6k 0.9× 2.8k 1.0× 2.7k 1.2× 248 7.2k
E. Monroy 6.4k 1.1× 3.8k 1.1× 3.3k 1.2× 4.2k 1.5× 3.3k 1.5× 347 9.3k

Countries citing papers authored by B. Daudin

Since Specialization
Citations

This map shows the geographic impact of B. Daudin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Daudin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Daudin more than expected).

Fields of papers citing papers by B. Daudin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Daudin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Daudin. The network helps show where B. Daudin may publish in the future.

Co-authorship network of co-authors of B. Daudin

This figure shows the co-authorship network connecting the top 25 collaborators of B. Daudin. A scholar is included among the top collaborators of B. Daudin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Daudin. B. Daudin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Robin, Éric, et al.. (2023). Comprehensive Electro-Optical Investigation of a Ga-Doped AlN Nanowire LED for Applications in the UV-C Range. ACS Applied Nano Materials. 6(15). 13945–13951.
2.
Jacopin, Gwénolé, et al.. (2023). Optical properties of Ga-doped AlN nanowires. Applied Physics Letters. 122(9). 6 indexed citations
3.
Jacopin, Gwénolé, Jean‐Luc Rouvière, A. García‐Cristóbal, et al.. (2023). Ultrathin GaN quantum wells in AlN nanowires for UV-C emission. Nanotechnology. 34(27). 275603–275603. 2 indexed citations
4.
Robin, Éric, et al.. (2022). Nanoscale imaging of dopant incorporation in n-type and p-type GaN nanowires by scanning spreading resistance microscopy. Journal of Applied Physics. 131(7). 1 indexed citations
5.
Correia, M. R., Gwénolé Jacopin, Julien Pernot, et al.. (2022). Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes. ACS Applied Nano Materials. 5(1). 972–984. 12 indexed citations
6.
Jacopin, Gwénolé, et al.. (2022). DX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current. Applied Physics Letters. 120(16). 6 indexed citations
7.
Robin, Éric, et al.. (2021). Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy. Applied Physics Letters. 119(26). 5 indexed citations
8.
Daudin, B., Fabrice Donatini, Catherine Bougerol, et al.. (2020). Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy. Nanotechnology. 32(2). 25601–25601. 6 indexed citations
9.
Uedono, Akira, et al.. (2019). Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam. Journal of Applied Physics. 125(17). 1 indexed citations
10.
Jacopin, Gwénolé, A. Cros, N. Garro, et al.. (2019). Mg and In Codoped p-type AlN Nanowires for pn Junction Realization. Nano Letters. 19(12). 8357–8364. 24 indexed citations
11.
Feldberg, Nathaniel, et al.. (2019). Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC. Nanotechnology. 30(37). 375602–375602. 14 indexed citations
12.
Mouton, Isabelle, Bastien Bonef, Catherine Bougerol, et al.. (2018). Dopant radial inhomogeneity in Mg-doped GaN nanowires. Nanotechnology. 29(25). 255706–255706. 22 indexed citations
13.
Donatini, Fabrice, et al.. (2017). Axial p–n junction and space charge limited current in single GaN nanowire. Nanotechnology. 29(1). 01LT01–01LT01. 11 indexed citations
14.
Zhang, Xin, et al.. (2016). 高InNモル分率を有するInGaNナノワイヤ:成長,構造および光学特性. Nanotechnology. 27(19). 10. 7 indexed citations
15.
Balocchi, A., Julien Renard, Cong Tu Nguyen, et al.. (2011). Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots. arXiv (Cornell University). 1 indexed citations
16.
Founta, S., Fabian Rol, E. Bellet‐Amalric, et al.. (2006). Growth of GaN quantum dots on nonpolar A ‐plane SiC by molecular‐beam epitaxy. physica status solidi (b). 243(15). 3968–3971. 10 indexed citations
17.
Gérard, Jean‐Michel, L. Ferlazzo, S. Founta, et al.. (2004). Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence. Physica E Low-dimensional Systems and Nanostructures. 26(1-4). 203–206. 35 indexed citations
18.
Dang, Le Si, G. Fishman, H. Mariette, et al.. (2003). GaN Quantum Dots: Physics and Applications. Journal of the Korean Physical Society. 42. 4 indexed citations
19.
Simon, Julia, et al.. (1999). Growth and Optical Characterization of InGaN Quantum Dots Resulting from a 2D–3D Transition. physica status solidi (a). 176(1). 639–642. 1 indexed citations
20.
Tatarenko, S., K. Saminadayar, T. Baron, et al.. (1995). n and p Type Doping Control of CdTe and CdZnTe Epilayers and CdTe/CdZnTe Quantum Structures. Materials science forum. 182-184. 23–28. 1 indexed citations

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