S. Hasenöhrl

528 total citations
82 papers, 412 citations indexed

About

S. Hasenöhrl is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, S. Hasenöhrl has authored 82 papers receiving a total of 412 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Atomic and Molecular Physics, and Optics, 42 papers in Condensed Matter Physics and 41 papers in Electrical and Electronic Engineering. Recurrent topics in S. Hasenöhrl's work include Semiconductor Quantum Structures and Devices (42 papers), GaN-based semiconductor devices and materials (38 papers) and ZnO doping and properties (21 papers). S. Hasenöhrl is often cited by papers focused on Semiconductor Quantum Structures and Devices (42 papers), GaN-based semiconductor devices and materials (38 papers) and ZnO doping and properties (21 papers). S. Hasenöhrl collaborates with scholars based in Slovakia, Germany and Czechia. S. Hasenöhrl's co-authors include J. Novák, P. Eliáš, I. Vávra, J. Kuzmı́k, R. Stoklas, R. Kúdela, Jaroslav Kováč, Edmund Dobročka, V. Cambel and J. Šoltýs and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. Hasenöhrl

76 papers receiving 386 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Hasenöhrl Slovakia 11 238 206 163 138 103 82 412
F. Uherek Slovakia 13 240 1.0× 166 0.8× 101 0.6× 79 0.6× 128 1.2× 73 438
Igor Altfeder United States 12 140 0.6× 348 1.7× 169 1.0× 81 0.6× 83 0.8× 25 512
Ichiro Shiraki Japan 10 208 0.9× 413 2.0× 144 0.9× 55 0.4× 90 0.9× 21 516
T. Hakkarainen Finland 13 367 1.5× 293 1.4× 175 1.1× 136 1.0× 180 1.7× 38 506
H.H. Yao Taiwan 9 197 0.8× 185 0.9× 125 0.8× 226 1.6× 60 0.6× 16 375
Д. Н. Лобанов Russia 13 285 1.2× 351 1.7× 306 1.9× 72 0.5× 110 1.1× 64 509
J.T. Mullins United Kingdom 13 399 1.7× 253 1.2× 281 1.7× 79 0.6× 56 0.5× 39 499
S. Rennesson France 11 270 1.1× 146 0.7× 161 1.0× 302 2.2× 75 0.7× 28 457
M. Sarzyński Poland 12 139 0.6× 139 0.7× 94 0.6× 276 2.0× 71 0.7× 35 328
E. V. Konenkova Russia 10 198 0.8× 139 0.7× 99 0.6× 187 1.4× 109 1.1× 53 355

Countries citing papers authored by S. Hasenöhrl

Since Specialization
Citations

This map shows the geographic impact of S. Hasenöhrl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Hasenöhrl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Hasenöhrl more than expected).

Fields of papers citing papers by S. Hasenöhrl

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Hasenöhrl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Hasenöhrl. The network helps show where S. Hasenöhrl may publish in the future.

Co-authorship network of co-authors of S. Hasenöhrl

This figure shows the co-authorship network connecting the top 25 collaborators of S. Hasenöhrl. A scholar is included among the top collaborators of S. Hasenöhrl based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Hasenöhrl. S. Hasenöhrl is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kuzmı́k, J., M. Blaho, D. Gregušová, et al.. (2024). Growth and performance of n++ GaN cap layer for HEMTs applications. Materials Science in Semiconductor Processing. 185. 108959–108959. 2 indexed citations
2.
Kuzmı́k, J., R. Stoklas, S. Hasenöhrl, et al.. (2024). InN/InAlN heterostructures for new generation of fast electronics. Journal of Applied Physics. 135(24).
3.
Kuzmı́k, J., S. Hasenöhrl, M. Blaho, et al.. (2023). Mg Doping of N-Polar, In-Rich InAlN. Materials. 16(6). 2250–2250. 2 indexed citations
4.
Stoklas, R., S. Hasenöhrl, D. Gregušová, et al.. (2023). Vertical GaN Transistor with Semi‐Insulating Channel. physica status solidi (a). 220(16). 1 indexed citations
5.
Novák, J., et al.. (2022). Investigation of a nanostructured GaP/MoS2 p-n heterojunction photodiode. AIP Advances. 12(6). 1 indexed citations
6.
Stoklas, R., S. Hasenöhrl, Edmund Dobročka, Filip Gucmann, & J. Kuzmı́k. (2022). Electron transport properties in thin InN layers grown on InAlN. Materials Science in Semiconductor Processing. 155. 107250–107250. 1 indexed citations
7.
Rosová, A., Edmund Dobročka, P. Eliáš, et al.. (2022). In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD. Nanomaterials. 12(19). 3496–3496. 1 indexed citations
8.
Gucmann, Filip, S. Hasenöhrl, P. Eliáš, et al.. (2021). InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures. Semiconductor Science and Technology. 36(7). 75025–75025. 3 indexed citations
9.
Stoklas, R., Aleš Chvála, S. Hasenöhrl, et al.. (2021). Analysis and Modeling of Vertical Current Conduction and Breakdown Mechanisms in Semi-Insulating GaN Grown on GaN: Role of Deep Levels. IEEE Transactions on Electron Devices. 68(5). 2365–2371. 7 indexed citations
10.
Hasenöhrl, S., et al.. (2019). Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer. Applied Surface Science. 502. 144086–144086. 10 indexed citations
11.
Hasenöhrl, S., Peter Šiffalovič, Edmund Dobročka, et al.. (2019). A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation. CrystEngComm. 22(1). 130–141. 2 indexed citations
12.
Hasenöhrl, S., Edmund Dobročka, M. P. Chauvat, et al.. (2019). Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD. Journal of Applied Physics. 125(10). 12 indexed citations
13.
Gregušová, D., L. Tóth, S. Hasenöhrl, et al.. (2019). InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region. Japanese Journal of Applied Physics. 58(SC). SCCD21–SCCD21. 2 indexed citations
14.
Hasenöhrl, S., Edmund Dobročka, R. Stoklas, et al.. (2018). Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer. Applied Surface Science. 470. 1–7. 10 indexed citations
15.
Hasenöhrl, S., et al.. (2018). Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures. Applied Physics Express. 12(1). 14001–14001. 4 indexed citations
16.
Novák, J., et al.. (2007). Influence of surface strain on the MOVPE growth of InGaP epitaxial layers. Applied Physics A. 87(3). 511–516. 8 indexed citations
17.
Kováč, Jaroslav, et al.. (2005). Investigation of graded In Ga1−P buffer by Raman scattering method. Microelectronics Journal. 37(6). 487–490. 3 indexed citations
18.
Novák, J., et al.. (2004). Growth and characterisation of layers with composition close to crossover from direct to indirect band gap. Journal of Crystal Growth. 275(1-2). e1281–e1286. 8 indexed citations
19.
Eliáš, P., V. Cambel, S. Hasenöhrl, & I. Kostič. (2001). OMCVD growth of InP and InGaAs on InP non-planar substrates patterned with {110} quasi facets. Journal of Crystal Growth. 233(1-2). 141–149. 6 indexed citations
20.
Novák, J., et al.. (1998). Resistivity anisotropy in ordered InxGa1−xP grown at 640 °C. Applied Physics Letters. 73(3). 369–371. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by F. Uherek Breakdown of academic impact, for papers by Igor Altfeder Breakdown of academic impact, for papers by Ichiro Shiraki Breakdown of academic impact, for papers by T. Hakkarainen Breakdown of academic impact, for papers by H.H. Yao Breakdown of academic impact, for papers by Д. Н. Лобанов Breakdown of academic impact, for papers by J.T. Mullins Breakdown of academic impact, for papers by S. Rennesson Breakdown of academic impact, for papers by M. Sarzyński Breakdown of academic impact, for papers by E. V. Konenkova
Rankless by CCL
2026