Filip Gucmann

457 total citations
45 papers, 342 citations indexed

About

Filip Gucmann is a scholar working on Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Filip Gucmann has authored 45 papers receiving a total of 342 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electronic, Optical and Magnetic Materials, 23 papers in Condensed Matter Physics and 21 papers in Materials Chemistry. Recurrent topics in Filip Gucmann's work include Ga2O3 and related materials (25 papers), GaN-based semiconductor devices and materials (22 papers) and Semiconductor materials and devices (16 papers). Filip Gucmann is often cited by papers focused on Ga2O3 and related materials (25 papers), GaN-based semiconductor devices and materials (22 papers) and Semiconductor materials and devices (16 papers). Filip Gucmann collaborates with scholars based in Slovakia, United Kingdom and Japan. Filip Gucmann's co-authors include Edmund Dobročka, M. Ťapajna, Martin Kuball, James W. Pomeroy, K. Hušeková, K. Fröhlich, J. Kuzmı́k, D. Gregušová, A. Rosová and R. Stoklas and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

Filip Gucmann

42 papers receiving 327 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Filip Gucmann Slovakia 12 175 173 154 136 63 45 342
A. Mallick India 13 313 1.8× 342 2.0× 95 0.6× 68 0.5× 38 0.6× 32 504
Lingyan Shen China 13 214 1.2× 141 0.8× 319 2.1× 187 1.4× 34 0.5× 43 463
M. Mohamed Sheik Sirajuddeen India 12 257 1.5× 224 1.3× 157 1.0× 43 0.3× 15 0.2× 44 369
S. Dhar India 11 307 1.8× 182 1.1× 156 1.0× 96 0.7× 27 0.4× 22 391
N. V. Pushkarev Belarus 8 231 1.3× 288 1.7× 111 0.7× 119 0.9× 24 0.4× 16 407
Anisha Kalra India 9 259 1.5× 317 1.8× 117 0.8× 205 1.5× 74 1.2× 11 401
Yueh-Chien Lee Taiwan 10 248 1.4× 125 0.7× 191 1.2× 109 0.8× 40 0.6× 21 354
Y. Lin United States 4 246 1.4× 110 0.6× 168 1.1× 46 0.3× 31 0.5× 6 344
Andrew F. Zhou United States 10 238 1.4× 136 0.8× 155 1.0× 51 0.4× 22 0.3× 25 344
Yongkuan Xu China 12 319 1.8× 148 0.9× 178 1.2× 82 0.6× 63 1.0× 16 402

Countries citing papers authored by Filip Gucmann

Since Specialization
Citations

This map shows the geographic impact of Filip Gucmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Filip Gucmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Filip Gucmann more than expected).

Fields of papers citing papers by Filip Gucmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Filip Gucmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Filip Gucmann. The network helps show where Filip Gucmann may publish in the future.

Co-authorship network of co-authors of Filip Gucmann

This figure shows the co-authorship network connecting the top 25 collaborators of Filip Gucmann. A scholar is included among the top collaborators of Filip Gucmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Filip Gucmann. Filip Gucmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kuzmı́k, J., M. Blaho, D. Gregušová, et al.. (2024). Growth and performance of n++ GaN cap layer for HEMTs applications. Materials Science in Semiconductor Processing. 185. 108959–108959. 2 indexed citations
2.
Šimkovic, I, Filip Gucmann, Edmund Dobročka, et al.. (2024). Properties of quaternized and cross-linked hydroxyethylcellulose composite films. Cellulose. 31(17). 10341–10357. 4 indexed citations
3.
Kuzmı́k, J., R. Stoklas, S. Hasenöhrl, et al.. (2024). InN/InAlN heterostructures for new generation of fast electronics. Journal of Applied Physics. 135(24).
4.
Gucmann, Filip, Aleš Chvála, R. Kúdela, et al.. (2024). Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off. ACS Applied Electronic Materials. 3 indexed citations
5.
Kuzmı́k, J., S. Hasenöhrl, M. Blaho, et al.. (2023). Mg Doping of N-Polar, In-Rich InAlN. Materials. 16(6). 2250–2250. 2 indexed citations
6.
Šimkovic, I, Filip Gucmann, Raniero Mendichi, et al.. (2023). Properties of quaternized and crosslinked carboxymethylcellulose films. Cellulose. 30(4). 2023–2036. 5 indexed citations
7.
Hušeková, K., Xiang Zheng, A. Rosová, et al.. (2023). Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(4). 19 indexed citations
8.
Dobročka, Edmund, Filip Gucmann, K. Hušeková, et al.. (2022). Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD. Materials. 16(1). 20–20. 13 indexed citations
9.
Gucmann, Filip, et al.. (2022). Conductance anisotropy of MOCVD-grown α-Ga2O3 films caused by (010) β-Ga2O3 filament-shaped inclusions. Journal of Physics D Applied Physics. 56(4). 45102–45102. 4 indexed citations
10.
Gucmann, Filip, Peter Nádaždy, K. Hušeková, et al.. (2022). Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD. Materials Science in Semiconductor Processing. 156. 107289–107289. 14 indexed citations
11.
Stoklas, R., S. Hasenöhrl, Edmund Dobročka, Filip Gucmann, & J. Kuzmı́k. (2022). Electron transport properties in thin InN layers grown on InAlN. Materials Science in Semiconductor Processing. 155. 107250–107250. 1 indexed citations
12.
Moško, Martin, M. Precner, Miroslav Mikolášek, et al.. (2021). Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition. Journal of Applied Physics. 130(3). 8 indexed citations
13.
Gucmann, Filip, James W. Pomeroy, & Martin Kuball. (2021). Scanning thermal microscopy for accurate nanoscale device thermography. Nano Today. 39. 101206–101206. 24 indexed citations
14.
Gucmann, Filip, S. Hasenöhrl, P. Eliáš, et al.. (2021). InN crystal habit, structural, electrical, and optical properties affected by sapphire substrate nitridation in N-polar InN/InAlN heterostructures. Semiconductor Science and Technology. 36(7). 75025–75025. 3 indexed citations
15.
Šimkovic, I, Filip Gucmann, Raniero Mendichi, et al.. (2021). Extraction and characterization of polysaccharide films prepared from Furcellaria lumbricalis and Gigartina skottsbergii seaweeds. Cellulose. 28(15). 9567–9588. 15 indexed citations
16.
Gucmann, Filip, K. Hušeková, Edmund Dobročka, et al.. (2020). Growth of α- and β-Ga 2 O 3 epitaxial layers on sapphire substrates using liquid-injection MOCVD. Semiconductor Science and Technology. 35(11). 115002–115002. 26 indexed citations
17.
Hasenöhrl, S., Peter Šiffalovič, Edmund Dobročka, et al.. (2019). A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation. CrystEngComm. 22(1). 130–141. 2 indexed citations
18.
Liang, Jianbo, Yan Zhou, Satoshi Masuya, et al.. (2019). Annealing effect of surface-activated bonded diamond/Si interface. Diamond and Related Materials. 93. 187–192. 35 indexed citations
19.
Hasenöhrl, S., Edmund Dobročka, M. P. Chauvat, et al.. (2019). Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD. Journal of Applied Physics. 125(10). 12 indexed citations
20.
Ťapajna, M., Filip Gucmann, K. Hušeková, et al.. (2018). Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures. Materials Science in Semiconductor Processing. 91. 356–361. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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