P. Kruszewski

612 total citations
47 papers, 480 citations indexed

About

P. Kruszewski is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P. Kruszewski has authored 47 papers receiving a total of 480 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 32 papers in Condensed Matter Physics and 20 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in P. Kruszewski's work include GaN-based semiconductor devices and materials (32 papers), Semiconductor materials and devices (17 papers) and Ga2O3 and related materials (13 papers). P. Kruszewski is often cited by papers focused on GaN-based semiconductor devices and materials (32 papers), Semiconductor materials and devices (17 papers) and Ga2O3 and related materials (13 papers). P. Kruszewski collaborates with scholars based in Poland, France and United Kingdom. P. Kruszewski's co-authors include P. Prystawko, Ł. Wachnicki, T. Krajewski, E. Guziewicz, M. Godlewski, M. Leszczyński, E. Przeździecka, S. Ferrari, G. Tallarida and K. Kopalko and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

P. Kruszewski

45 papers receiving 467 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Kruszewski Poland 12 324 264 214 163 105 47 480
Anindya Nath United States 14 415 1.3× 235 0.9× 264 1.2× 180 1.1× 147 1.4× 43 591
N. Dharmarasu Singapore 14 451 1.4× 177 0.7× 263 1.2× 174 1.1× 217 2.1× 67 628
X. Weng United States 16 381 1.2× 338 1.3× 310 1.4× 156 1.0× 202 1.9× 32 712
C. J. Collins United States 10 193 0.6× 129 0.5× 351 1.6× 265 1.6× 155 1.5× 18 483
R. Kruszka Poland 10 223 0.7× 134 0.5× 127 0.6× 70 0.4× 99 0.9× 47 333
Jintong Xu China 13 248 0.8× 138 0.5× 241 1.1× 169 1.0× 124 1.2× 44 468
S. Rennesson France 11 270 0.8× 161 0.6× 302 1.4× 141 0.9× 146 1.4× 28 457
Kamal Hussain United States 12 279 0.9× 137 0.5× 307 1.4× 208 1.3× 99 0.9× 48 463
Jianping Zeng China 9 120 0.4× 167 0.6× 327 1.5× 226 1.4× 66 0.6× 32 418
D. S. Rawal India 15 474 1.5× 153 0.6× 424 2.0× 164 1.0× 169 1.6× 83 619

Countries citing papers authored by P. Kruszewski

Since Specialization
Citations

This map shows the geographic impact of P. Kruszewski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Kruszewski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Kruszewski more than expected).

Fields of papers citing papers by P. Kruszewski

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Kruszewski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Kruszewski. The network helps show where P. Kruszewski may publish in the future.

Co-authorship network of co-authors of P. Kruszewski

This figure shows the co-authorship network connecting the top 25 collaborators of P. Kruszewski. A scholar is included among the top collaborators of P. Kruszewski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Kruszewski. P. Kruszewski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kruszewski, P., Andreas Fiedler, & Zbigniew Galazka. (2025). The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method. Applied Physics Letters. 126(6). 1 indexed citations
2.
Kruszewski, P., et al.. (2024). Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN. AIP Advances. 14(7). 2 indexed citations
3.
4.
Kruszewski, P., Szymon Grzanka, Ewa Grzanka, et al.. (2024). FeGa (0/−) acceptor level as a reference energy level in dilute AlxGa1−xN. Applied Physics Letters. 124(23). 1 indexed citations
5.
Kruszewski, P., В. П. Маркевич, А. R. Peaker, et al.. (2023). Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN. Applied Physics Letters. 123(22). 5 indexed citations
6.
Маркевич, В. П., Matthew P. Halsall, Lijie Sun, et al.. (2022). Electric‐Field Enhancement of Electron Emission Rates for Deep‐Level Traps in n‐type GaN. physica status solidi (b). 260(8). 8 indexed citations
7.
Kruszewski, P., P. Kamiński, R. Kozłowski, et al.. (2021). Laplace DLTS studies of the 0.25 eV electron trap properties in n -GaN. Semiconductor Science and Technology. 36(3). 35014–35014. 6 indexed citations
8.
Kruszewski, P., P. Prystawko, Tomasz Sochacki, et al.. (2019). Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate. Materials Science in Semiconductor Processing. 96. 132–136. 16 indexed citations
9.
Schilirò, Emanuela, Filippo Giannazzo, Corrado Bongiorno, et al.. (2019). Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition. Materials Science in Semiconductor Processing. 97. 35–39. 12 indexed citations
10.
But, Dmytro B., M. Sakowicz, P. Kruszewski, et al.. (2018). AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range. Semiconductor Science and Technology. 34(2). 24002–24002. 11 indexed citations
11.
Grigelionis, I., Vytautas Janonis, Irmantas Kašalynas, et al.. (2018). Terahertz Electroluminescence of Shallow Impurities in AlGaN/GaN Heterostructures at Temperatures above 80 K. physica status solidi (b). 255(5). 6 indexed citations
12.
Kruszewski, P., et al.. (2017). Properties of AlGaN/GaN Ni/Au-Schottky diodes on 2°-off silicon carbide substrates. physica status solidi (a). 214(4). 1600376–1600376. 6 indexed citations
13.
Iwińska, Małgorzata, V.Yu. Ivanov, Mikolaj Amilusik, et al.. (2017). Crystal growth of HVPE-GaN doped with germanium. Journal of Crystal Growth. 480. 102–107. 25 indexed citations
14.
Kamińska, E., Wojciech Gwarek, Robert Kucharski, et al.. (2016). (Invited) Manufacturing Microwave AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Truly Bulk Semi-Insulating GaN Substrates. ECS Transactions. 75(12). 77–84. 7 indexed citations
15.
Greco, Giuseppe, Ferdinando Iucolano, Corrado Bongiorno, et al.. (2015). Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality. physica status solidi (a). 212(5). 1091–1098. 6 indexed citations
16.
Dobaczewski, L., В. П. Маркевич, P. Kruszewski, I.D. Hawkins, & А. R. Peaker. (2009). Energy state distributions at oxide–semiconductor interfaces investigated by Laplace DLTS. Physica B Condensed Matter. 404(23-24). 4604–4607. 1 indexed citations
17.
Kruszewski, P., L. Dobaczewski, В. П. Маркевич, et al.. (2008). Hole-Related Electrical Activity of InAs/GaAs Quantum Dots. Acta Physica Polonica A. 114(5). 1201–1206. 1 indexed citations
18.
Dobaczewski, L., S. Bernardini, P. Kruszewski, et al.. (2008). Energy state distributions of the Pb centers at the (100), (110), and (111) Si∕SiO2 interfaces investigated by Laplace deep level transient spectroscopy. Applied Physics Letters. 92(24). 22 indexed citations
19.
Kruszewski, P., A. Mesli, L. Dobaczewski, et al.. (2007). Iron-aluminium pair reconfiguration processes in SiGe alloys. Journal of Materials Science Materials in Electronics. 18(7). 759–762. 3 indexed citations
20.
Kruszewski, P., A. Mesli, L. Dobaczewski, et al.. (2007). Alloy shift of “no-germanium” iron-related electronic levels in unstrained silicon-germanium alloys. Physical Review B. 76(23). 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Anindya Nath Breakdown of academic impact, for papers by N. Dharmarasu Breakdown of academic impact, for papers by X. Weng Breakdown of academic impact, for papers by C. J. Collins Breakdown of academic impact, for papers by R. Kruszka Breakdown of academic impact, for papers by Jintong Xu Breakdown of academic impact, for papers by S. Rennesson Breakdown of academic impact, for papers by Kamal Hussain Breakdown of academic impact, for papers by Jianping Zeng Breakdown of academic impact, for papers by D. S. Rawal
Rankless by CCL
2026