R. Held

685 total citations
18 papers, 532 citations indexed

About

R. Held is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Held has authored 18 papers receiving a total of 532 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 7 papers in Condensed Matter Physics and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Held's work include Silicon Carbide Semiconductor Technologies (8 papers), Semiconductor materials and devices (5 papers) and GaN-based semiconductor devices and materials (5 papers). R. Held is often cited by papers focused on Silicon Carbide Semiconductor Technologies (8 papers), Semiconductor materials and devices (5 papers) and GaN-based semiconductor devices and materials (5 papers). R. Held collaborates with scholars based in Germany, United States and United Kingdom. R. Held's co-authors include E. Niemann, P. I. Cohen, A. M. Dabiran, W. Wondrak, U. Schmid, Nando Kaminski, Megan E. Holtz, David A. Muller, Darrell G. Schlom and Julia A. Mundy and has published in prestigious journals such as Nature Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Held

18 papers receiving 515 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Held Germany 11 296 231 193 193 106 18 532
A. L. Syrkin United States 13 337 1.1× 168 0.7× 236 1.2× 145 0.8× 171 1.6× 53 524
J. T. Hsu Taiwan 10 193 0.7× 338 1.5× 370 1.9× 294 1.5× 151 1.4× 18 585
Wen-Tai Lin Taiwan 9 199 0.7× 213 0.9× 103 0.5× 96 0.5× 89 0.8× 37 353
Anindya Nath United States 14 415 1.4× 235 1.0× 264 1.4× 180 0.9× 147 1.4× 43 591
Jin‐Kuo Ho Taiwan 6 286 1.0× 212 0.9× 475 2.5× 251 1.3× 130 1.2× 9 562
S. H. Goss United States 13 272 0.9× 166 0.7× 230 1.2× 143 0.7× 108 1.0× 29 418
Stephan G. Mueller United States 12 283 1.0× 102 0.4× 176 0.9× 139 0.7× 106 1.0× 32 454
J.M. Li China 15 308 1.0× 239 1.0× 184 1.0× 109 0.6× 221 2.1× 33 510
K. Y. Zang Singapore 15 200 0.7× 268 1.2× 369 1.9× 214 1.1× 78 0.7× 38 498
T. P. Chow United States 11 334 1.1× 108 0.5× 229 1.2× 162 0.8× 108 1.0× 22 436

Countries citing papers authored by R. Held

Since Specialization
Citations

This map shows the geographic impact of R. Held's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Held with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Held more than expected).

Fields of papers citing papers by R. Held

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Held. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Held. The network helps show where R. Held may publish in the future.

Co-authorship network of co-authors of R. Held

This figure shows the co-authorship network connecting the top 25 collaborators of R. Held. A scholar is included among the top collaborators of R. Held based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Held. R. Held is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Arnold, E., J. M. Riley, L. B. Duffy, et al.. (2025). Magnetic x-ray spectroscopy of Gd-doped EuO thin films. Physical Review Materials. 9(2). 1 indexed citations
2.
Held, R., et al.. (2021). Fabrication of chemically and structurally abrupt Eu1−xLaxO/SrO/Si interfaces and their analysis by STEM-EELS. Physical Review Materials. 5(12). 2 indexed citations
3.
Held, R., Alexander Melville, Julia A. Mundy, et al.. (2020). Exploring the intrinsic limit of the charge-carrier-induced increase of the Curie temperature of Lu- and La-doped EuO thin films. Physical Review Materials. 4(10). 10 indexed citations
4.
Mundy, Julia A., Jakob Schaab, Yu Kumagai, et al.. (2017). Functional electronic inversion layers at ferroelectric domain walls. Nature Materials. 16(6). 622–627. 131 indexed citations
5.
Wondrak, W., et al.. (2005). A new concept for high-voltage SOI devices. 278–281. 9 indexed citations
6.
Silber, D., et al.. (2002). Predictive modeling of SiC-device power Schottky diode for investigations in power electronics. 1. 239–245. 5 indexed citations
7.
Wondrak, W., et al.. (2002). SiC devices for power and high-temperature applications. 1. 153–156. 8 indexed citations
8.
9.
Wondrak, W., R. Held, E. Niemann, & U. Schmid. (2001). SiC devices for advanced power and high-temperature applications. IEEE Transactions on Industrial Electronics. 48(2). 307–308. 93 indexed citations
10.
Held, R., et al.. (2000). A rate equation model for the growth of GaN on GaN(0001) by molecular beam epitaxy. Journal of Applied Physics. 87(3). 1219–1226. 13 indexed citations
11.
Held, R., et al.. (2000). SiC-Power Rectifiers. Materials science forum. 338-342. 1407–1410. 9 indexed citations
12.
Held, R., G. Nowak, S. M. Seutter, et al.. (1999). Structure and composition of GaN(0001) A and B surfaces. Journal of Applied Physics. 85(11). 7697–7704. 56 indexed citations
13.
Held, R., Nando Kaminski, & E. Niemann. (1998). SiC Merged p-n/Schottky Rectifiers for High Voltage Applications. Materials science forum. 264-268. 1057–1060. 36 indexed citations
14.
Held, R., et al.. (1998). N-Limited Versus Ga-Limited Growth on ${\rm GaN}(000\bar{1})$ by MBE Using NH3. Surface Review and Letters. 5(03n04). 913–934. 42 indexed citations
15.
Held, R., et al.. (1997). In situ control of gan growth by molecular beam epitaxy. Journal of Electronic Materials. 26(3). 272–280. 59 indexed citations
16.
Schröder, Christian, et al.. (1996). Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodes. Applied Physics Letters. 68(14). 1957–1959. 17 indexed citations
17.
Held, R., et al.. (1996). Growth Rate Reduction of GaN Due to Ga Surface Accumulation. MRS Internet Journal of Nitride Semiconductor Research. 1. 17 indexed citations
18.
Held, R., et al.. (1993). Comparison of DMOS/IGBT-compatible high-voltage termination structures and passivation techniques. IEEE Transactions on Electron Devices. 40(10). 1845–1854. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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