Thomas Auzelle

506 total citations
31 papers, 395 citations indexed

About

Thomas Auzelle is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Thomas Auzelle has authored 31 papers receiving a total of 395 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Condensed Matter Physics, 17 papers in Electronic, Optical and Magnetic Materials and 15 papers in Materials Chemistry. Recurrent topics in Thomas Auzelle's work include GaN-based semiconductor devices and materials (28 papers), Ga2O3 and related materials (17 papers) and ZnO doping and properties (14 papers). Thomas Auzelle is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), Ga2O3 and related materials (17 papers) and ZnO doping and properties (14 papers). Thomas Auzelle collaborates with scholars based in Germany, France and Spain. Thomas Auzelle's co-authors include B. Daudin, B. Gayral, A. Cros, Albert Minj, Benedikt Haas, Jean‐Luc Rouvière, J. Colchero, M. den Hertog, Lutz Geelhaar and Mathieu Kociak and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Thomas Auzelle

31 papers receiving 390 citations

Peers

Thomas Auzelle

CMP

EOMM

EEE

Aurélie Pierret France

Tilman Schimpke Germany

Sammy Saber United States

Giuliano Vescovi Sweden

S. Rennesson France

M. A. Mastro United States

Pavel Aseev Spain

Johannes Ledig Germany

Takao Oto Japan

M. Niebelschütz Germany

Aurélie Pierret France

Thomas Auzelle

175 ×0.7

CMP

298 ×1.5

118 ×0.7

EOMM

191 ×1.3

138 ×1.2

EEE

Citations per year, relative to Thomas Auzelle Thomas Auzelle (= 1×) peers Aurélie Pierret

Countries citing papers authored by Thomas Auzelle

Since Specialization

Citations

This map shows the geographic impact of Thomas Auzelle's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Thomas Auzelle with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Thomas Auzelle more than expected).

Fields of papers citing papers by Thomas Auzelle

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Thomas Auzelle. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Thomas Auzelle. The network helps show where Thomas Auzelle may publish in the future.

Co-authorship network of co-authors of Thomas Auzelle

This figure shows the co-authorship network connecting the top 25 collaborators of Thomas Auzelle. A scholar is included among the top collaborators of Thomas Auzelle based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Thomas Auzelle. Thomas Auzelle is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kang, Jingxuan, Thomas Auzelle, A. Trampert, et al.. (2025). Growth of compositionally uniform In_xGa_1−xN layers with low relaxation degree on GaN by molecular beam epitaxy. Journal of Physics D Applied Physics. 58(14). 14LT01–14LT01. 1 indexed citations

Trampert, A., Jonas Lähnemann, Vladimir M. Kaganer, et al.. (2024). ScN/GaN(1100): A New Platform for the Epitaxy of Twin-Free Metal–Semiconductor Heterostructures. Nano Letters. 24(21). 6233–6239. 2 indexed citations

Kang, Jingxuan, Thomas Auzelle, Abbès Tahraoui, et al.. (2024). Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles. Nanotechnology. 35(37). 375301–375301. 4 indexed citations

Auzelle, Thomas, et al.. (2024). AlN Nanowire-Based Vertically Integrated Piezoelectric Nanogenerators. ACS Applied Nano Materials. 7(13). 15798–15807. 3 indexed citations

Kaganer, Vladimir M., Stefan Meister, Abbès Tahraoui, et al.. (2023). A route for the top-down fabrication of ordered ultrathin GaN nanowires. Nanotechnology. 34(20). 205301–205301. 6 indexed citations

Ruiz, Marcos Gómez, Jonas Lähnemann, A. Trampert, et al.. (2023). Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires. Nanotechnology. 34(46). 465605–465605. 4 indexed citations

Auzelle, Thomas, et al.. (2023). Density control of GaN nanowires at the wafer scale using self-assembled SiN_x patches on sputtered TiN(111). Nanotechnology. 34(37). 375602–375602. 3 indexed citations

Auzelle, Thomas, Wolfgang Kowalsky, Eric Mankel, et al.. (2021). External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers. ACS Applied Materials & Interfaces. 13(3). 4626–4635. 8 indexed citations

Auzelle, Thomas, et al.. (2020). Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires. ACS Applied Nano Materials. 4(1). 43–52. 13 indexed citations

10.

Corfdir, Pierre, Carsten Pfüller, Guanhui Gao, et al.. (2019). Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy. Nano Letters. 19(9). 5938–5948. 7 indexed citations

11.

Calabrese, Gabriele, Guanhui Gao, Pierre Corfdir, et al.. (2019). Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al₂O₃. Nanotechnology. 30(11). 114001–114001. 11 indexed citations

12.

Auzelle, Thomas, Gabriele Calabrese, & Sergio Fernández‐Garrido. (2019). Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition. Physical Review Materials. 3(1). 5 indexed citations

13.

Corfdir, Pierre, Gabriele Calabrese, Apurba Laha, et al.. (2018). Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry. CrystEngComm. 20(23). 3202–3206. 6 indexed citations

14.

Lourenço‐Martins, Hugo, Sophie Meuret, Mathieu Kociak, et al.. (2016). InGaN nanowires with high InN molar fraction: growth, structural and optical properties. Nanotechnology. 27(19). 195704–195704. 21 indexed citations

15.

Minj, Albert, A. Cros, Thomas Auzelle, Julien Pernot, & B. Daudin. (2016). Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy. Nanotechnology. 27(38). 385202–385202. 21 indexed citations

16.

Rodrigues, J., J. F. C. Carreira, N. Ben Sédrine, et al.. (2016). Correction to “Spectroscopic Analysis of Eu³⁺ Implanted and Annealed GaN Layers and Nanowires”. The Journal of Physical Chemistry C. 120(12). 6907–6908. 6 indexed citations

17.

Rodrigues, J., J. F. C. Carreira, N. Ben Sédrine, et al.. (2015). Spectroscopic Analysis of Eu³⁺ Implanted and Annealed GaN Layers and Nanowires. The Journal of Physical Chemistry C. 119(31). 17954–17964. 12 indexed citations

18.

Auzelle, Thomas, Benedikt Haas, M. den Hertog, et al.. (2015). Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries. Applied Physics Letters. 107(5). 43 indexed citations

19.

Tizei, Luiz H. G., Sophie Meuret, Katia March, et al.. (2014). A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures. Applied Physics Letters. 105(14). 7 indexed citations

20.

Rodrigues, J., N. Ben Sédrine, M. Felizardo, et al.. (2014). GaN:Pr³⁺ nanostructures for red solid state light emission. RSC Advances. 4(108). 62869–62877. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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