Wen‐How Lan

406 total citations
42 papers, 337 citations indexed

About

Wen‐How Lan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Wen‐How Lan has authored 42 papers receiving a total of 337 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 10 papers in Condensed Matter Physics. Recurrent topics in Wen‐How Lan's work include ZnO doping and properties (14 papers), Semiconductor materials and devices (12 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). Wen‐How Lan is often cited by papers focused on ZnO doping and properties (14 papers), Semiconductor materials and devices (12 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). Wen‐How Lan collaborates with scholars based in Taiwan and China. Wen‐How Lan's co-authors include YewChung Sermon Wu, Jenn‐Ming Wu, Lung‐Chien Chen, Mu‐Chun Wang, Yu‐Ting Hsu, Chien-Jung Huang, Ming‐Chang Shih, K. F. Huang, Lu‐Yin Lin and Jinhua Hong and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and Thin Solid Films.

In The Last Decade

Wen‐How Lan

38 papers receiving 323 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wen‐How Lan Taiwan 11 189 180 147 80 76 42 337
Xinhe Zheng China 11 222 1.2× 201 1.1× 180 1.2× 94 1.2× 114 1.5× 41 390
Albert Minj Belgium 12 261 1.4× 229 1.3× 207 1.4× 92 1.1× 164 2.2× 48 476
S. J. Chang Taiwan 13 207 1.1× 319 1.8× 265 1.8× 61 0.8× 147 1.9× 17 472
D. Y. Song United States 11 310 1.6× 146 0.8× 199 1.4× 95 1.2× 161 2.1× 21 383
Yueh-Chien Lee Taiwan 10 109 0.6× 191 1.1× 248 1.7× 54 0.7× 125 1.6× 21 354
Dong Sing Wuu Taiwan 9 92 0.5× 258 1.4× 271 1.8× 37 0.5× 81 1.1× 30 367
Haris Naeem Abbasi China 12 84 0.4× 206 1.1× 217 1.5× 35 0.4× 76 1.0× 33 340
Binh Tinh Tran Taiwan 10 201 1.1× 102 0.6× 109 0.7× 63 0.8× 102 1.3× 30 289
J. W. Sinclair United States 12 168 0.9× 61 0.3× 77 0.5× 69 0.9× 120 1.6× 18 292
An-Jye Tzou Taiwan 14 394 2.1× 335 1.9× 246 1.7× 123 1.5× 179 2.4× 32 571

Countries citing papers authored by Wen‐How Lan

Since Specialization
Citations

This map shows the geographic impact of Wen‐How Lan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wen‐How Lan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wen‐How Lan more than expected).

Fields of papers citing papers by Wen‐How Lan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wen‐How Lan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wen‐How Lan. The network helps show where Wen‐How Lan may publish in the future.

Co-authorship network of co-authors of Wen‐How Lan

This figure shows the co-authorship network connecting the top 25 collaborators of Wen‐How Lan. A scholar is included among the top collaborators of Wen‐How Lan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wen‐How Lan. Wen‐How Lan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shih, Ming‐Chang, et al.. (2023). Thickness Study of Ga2O3 Barrier Layer in p-Si/n-MgZnO:Er/Ga2O3/ZnO:In Diode. Crystals. 13(2). 275–275. 1 indexed citations
2.
Shih, Ming‐Chang, et al.. (2023). An Al/SiO2/Si MIS Photo-detector and its Photo-Current Characterization. 18. 866–869.
3.
Lien, Shui‐Yang, et al.. (2022). Transparent Patch Antenna Fabricatedwith Poly(3,4-ethylene dioxythiophene) Polystyrene Sulfonate (PEDOT:PSS) in 2.45 GHz. Sensors and Materials. 34(5). 1845–1845. 2 indexed citations
4.
Shih, Ming‐Chang, et al.. (2021). Study of N-doping in (Bi2MoO6, MoO3)/SnOx:N photocatalys in the degradation of RhB using visible light. Modern Physics Letters B. 35(29). 2 indexed citations
5.
Wang, Mu‐Chun, et al.. (2021). High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs. Crystals. 11(3). 262–262. 5 indexed citations
6.
Wang, Mu‐Chun, et al.. (2020). Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs. Electronics. 9(12). 2095–2095. 3 indexed citations
7.
8.
Lan, Wen‐How, Ming‐Chang Shih, Mu‐Chun Wang, et al.. (2018). Resistance Study of Er-doped Zinc Oxide Diode by Spray Pyrolysis. Sensors and Materials. 939–939. 3 indexed citations
9.
Lan, Wen‐How, Mu‐Chun Wang, Ming‐Chang Shih, et al.. (2018). Carrier concentration of calcium zinc oxide with different calcium contents deposited through spray pyrolysis. Microsystem Technologies. 24(10). 4267–4272. 3 indexed citations
10.
Lan, Wen‐How, et al.. (2017). The Effect of Ascorbic Acid Using in Electrochemical Method to Synthesize Gold Nanoparticles. Journal of Nanoscience and Nanotechnology. 17(8). 5735–5739. 2 indexed citations
11.
Wang, Mu‐Chun, et al.. (2017). Thermal stress probing the channel-length modulation effect of nano n-type FinFETs. Microelectronics Reliability. 83. 260–270. 4 indexed citations
12.
13.
Lan, Wen‐How, et al.. (2014). Effects of post anneal for the INZO films prepared by ultrasonic spray pyrolysis. Advances in nano research. 2(4). 179–186. 1 indexed citations
14.
15.
Lan, Wen‐How, et al.. (2012). Electrical properties of cuprous oxide thin films fabricated by ultrasonic spray pyrolysis. 669–670. 9 indexed citations
16.
Lan, Wen‐How, et al.. (2012). Boron-doped zinc oxide thin films fabricated by ultrasonic spray pyrolysis. 339. 665–666. 1 indexed citations
17.
Wu, Jenn‐Ming, et al.. (2008). Electrical properties and optical bandgaps of AlInN films by reactive sputtering. Journal of Crystal Growth. 310(24). 5308–5311. 24 indexed citations
18.
Lan, Wen‐How, et al.. (2005). Thermal Annealing Effect of Indium Tin Oxide Contact to GaN Light-Emitting Diodes. Japanese Journal of Applied Physics. 44(10R). 7424–7424. 10 indexed citations
19.
Chen, Lung‐Chien, et al.. (2003). GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer. Solid-State Electronics. 47(10). 1843–1846. 44 indexed citations
20.
Yu, Chang-Chin, et al.. (2001). Beryllium-Implanted P-Type GaN with High Carrier Concentration. Japanese Journal of Applied Physics. 40(5A). L417–L417. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026