Adrian Ildefonso

812 total citations
60 papers, 604 citations indexed

About

Adrian Ildefonso is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Instrumentation. According to data from OpenAlex, Adrian Ildefonso has authored 60 papers receiving a total of 604 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 5 papers in Computational Mechanics and 3 papers in Instrumentation. Recurrent topics in Adrian Ildefonso's work include Radiation Effects in Electronics (32 papers), Semiconductor materials and devices (29 papers) and Advancements in Semiconductor Devices and Circuit Design (26 papers). Adrian Ildefonso is often cited by papers focused on Radiation Effects in Electronics (32 papers), Semiconductor materials and devices (29 papers) and Advancements in Semiconductor Devices and Circuit Design (26 papers). Adrian Ildefonso collaborates with scholars based in United States, Germany and France. Adrian Ildefonso's co-authors include Ani Khachatrian, John D. Cressler, Dale McMorrow, George N. Tzintzarov, S. Büchner, Zachary E. Fleetwood, Jeffrey H. Warner, F. Ren, S. J. Pearton and Joel M. Hales and has published in prestigious journals such as Optics Express, Sensors and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

Adrian Ildefonso

58 papers receiving 579 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Adrian Ildefonso United States 13 513 83 76 63 44 60 604
Nicolas J.-H. Roche United States 16 506 1.0× 51 0.6× 27 0.4× 47 0.7× 32 0.7× 43 555
Stephen LaLumondiere United States 10 282 0.5× 78 0.9× 18 0.2× 45 0.7× 137 3.1× 31 365
Ming He China 10 220 0.4× 70 0.8× 65 0.9× 158 2.5× 79 1.8× 74 395
D. Silber Germany 18 769 1.5× 104 1.3× 20 0.3× 34 0.5× 142 3.2× 58 852
Shang-Yi Chiang United States 11 565 1.1× 113 1.4× 18 0.2× 44 0.7× 307 7.0× 31 637
Dang Mo China 11 201 0.4× 199 2.4× 47 0.6× 8 0.1× 93 2.1× 44 338
H.N. Yu United States 12 1.0k 2.0× 159 1.9× 18 0.2× 16 0.3× 126 2.9× 28 1.0k
B. Jagannathan United States 20 1.1k 2.1× 82 1.0× 6 0.1× 27 0.4× 167 3.8× 55 1.1k
S. Tedesco France 11 279 0.5× 43 0.5× 34 0.4× 58 0.9× 143 3.3× 42 416
F. Van de Wiele Belgium 14 672 1.3× 69 0.8× 16 0.2× 11 0.2× 123 2.8× 67 710

Countries citing papers authored by Adrian Ildefonso

Since Specialization
Citations

This map shows the geographic impact of Adrian Ildefonso's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Adrian Ildefonso with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Adrian Ildefonso more than expected).

Fields of papers citing papers by Adrian Ildefonso

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Adrian Ildefonso. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Adrian Ildefonso. The network helps show where Adrian Ildefonso may publish in the future.

Co-authorship network of co-authors of Adrian Ildefonso

This figure shows the co-authorship network connecting the top 25 collaborators of Adrian Ildefonso. A scholar is included among the top collaborators of Adrian Ildefonso based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Adrian Ildefonso. Adrian Ildefonso is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Koehler, Andrew D., Ani Khachatrian, Alan G. Jacobs, et al.. (2025). Single-Event Transients in Vertical GaN Diodes With N-Implanted Hybrid Edge Termination. IEEE Transactions on Nuclear Science. 72(8). 2333–2339.
2.
Ildefonso, Adrian, et al.. (2024). Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA. IEEE Transactions on Nuclear Science. 71(8). 1691–1698. 1 indexed citations
3.
Teng, Jeffrey W., et al.. (2024). How to Consider SEEs When Designing a SiGe Low-Noise Amplifier—An Overview. IEEE Transactions on Nuclear Science. 71(8). 1663–1674. 5 indexed citations
4.
Ildefonso, Adrian, Joel M. Hales, Ani Khachatrian, et al.. (2023). The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs. IEEE Transactions on Nuclear Science. 70(8). 1797–1804. 3 indexed citations
5.
Teng, Jeffrey W., et al.. (2023). Analysis of Optical Single-Event Transients in Integrated Silicon Photonics Mach–Zehnder Modulators for Space-Based Optical Communications. IEEE Transactions on Nuclear Science. 71(4). 736–743. 1 indexed citations
6.
Teng, Jeffrey W., et al.. (2023). Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier. IEEE Transactions on Nuclear Science. 71(4). 823–829. 3 indexed citations
7.
Teng, Jeffrey W., et al.. (2023). Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs. IEEE Transactions on Nuclear Science. 71(4). 816–822. 2 indexed citations
8.
Ildefonso, Adrian, et al.. (2023). A Hybrid Model-Based and Data-Driven Framework for Automated Spacecraft Fault Detection. Annual Conference of the PHM Society. 15(1). 1 indexed citations
9.
Georgiev, Daniel G., Andrew D. Koehler, Karl D. Hobart, et al.. (2022). Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations. IEEE Transactions on Electron Devices. 69(12). 6940–6947. 11 indexed citations
10.
Teng, Jeffrey W., K. Li, Adrian Ildefonso, et al.. (2022). Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures. IEEE Transactions on Nuclear Science. 69(5). 1079–1084. 8 indexed citations
11.
Teng, Jeffrey W., George N. Tzintzarov, K. Li, et al.. (2021). Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation. IEEE Transactions on Nuclear Science. 69(3). 282–289. 1 indexed citations
12.
Pearton, S. J., Assel Aitkaliyeva, Minghan Xian, et al.. (2021). Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors. ECS Journal of Solid State Science and Technology. 10(5). 55008–55008. 91 indexed citations
13.
Pearton, S. J., Aman Haque, Ani Khachatrian, et al.. (2021). Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics. ECS Journal of Solid State Science and Technology. 10(7). 75004–75004. 42 indexed citations
14.
Tzintzarov, George N., S. Büchner, Dale McMorrow, et al.. (2019). Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform. IEEE Transactions on Nuclear Science. 67(1). 260–267. 4 indexed citations
15.
Hales, Joel M., Ani Khachatrian, Jeffrey H. Warner, et al.. (2019). Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics. Optics Express. 27(26). 37652–37652. 8 indexed citations
16.
Ildefonso, Adrian, Jeffrey H. Warner, John D. Cressler, et al.. (2019). Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI. IEEE Transactions on Nuclear Science. 67(1). 71–80. 14 indexed citations
17.
Hales, Joel M., John D. Cressler, Dale McMorrow, et al.. (2019). New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles. IEEE Transactions on Nuclear Science. 67(1). 81–90. 21 indexed citations
18.
Ildefonso, Adrian, George N. Tzintzarov, Nelson E. Lourenco, et al.. (2019). Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam. IEEE Transactions on Nuclear Science. 67(1). 91–98. 12 indexed citations
19.
Goley, Patrick S., George N. Tzintzarov, Saeed Zeinolabedinzadeh, et al.. (2018). Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform. IEEE Transactions on Nuclear Science. 66(1). 125–133. 19 indexed citations
20.
Ildefonso, Adrian, Zachary E. Fleetwood, George N. Tzintzarov, et al.. (2018). Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs. IEEE Transactions on Nuclear Science. 66(1). 359–367. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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