James C. Gallagher

711 citations

49 papers · 562 indexed · h-index 15

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials
- Magnetic and transport properties of perovskites and related materials

Papers in

Condensed Matter Physics 35
- GaN-based semiconductor devices and materials 33
Electronic, Optical and Magnetic Materials 22
- Ga2O3 and related materials 19

Co-authors: Travis J. Anderson Karl D. Hobart Andrew D. Koehler Marko J. Tadjer Michael A. Mastro Jennifer K. Hite Jaime A. Freitas Mona A. Ebrish
Journals: Journal of Applied Physics (5 papers)Applied Physics Letters (3 papers)IEEE Transactions on Electron Devices (3 papers)ECS Journal of Solid State Science and Technology (3 papers)Journal of Crystal Growth (3 papers)
Partner nations: United States Germany Romania

In The Last Decade

James C. Gallagher

47 papers receiving 545 citations

Peers

Countries citing papers authored by James C. Gallagher

Since Specialization

Citations

This map shows the geographic impact of James C. Gallagher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by James C. Gallagher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites James C. Gallagher more than expected).

Fields of papers citing papers by James C. Gallagher

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by James C. Gallagher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by James C. Gallagher. The network helps show where James C. Gallagher may publish in the future.

Co-authors

The 25 scholars most cited alongside James C. Gallagher, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with James C. Gallagher Line = papers co-authored together James C. Gallagher links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Band alignment of Cr2MnO4 on (2¯01) and (001) β-Ga2O3 Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·王子立, Chao-Ching Chiang, F. Ren, Don L. Mansfield, Lars Rex, Raj Spielmann, Adam J. Hauser, Marko J. Tadjer, James C. Gallagher, S. J. Pearton	2025	1
2	Epitaxial Cr2MnO4 p–n heterojunction to (2¯01) β-Ga2O3 deposited via off-axis magnetron sputtering Journal of Applied Physics ·Don L. Mansfield, Lars Rex, Raj Spielmann, James C. Gallagher, Marko J. Tadjer, 亭内田, Michael G. Hall, Zi-hu Wang, Gaurab Rimal, A. Kayani, Daniel J. Pennachio, Ольга Салыкова, Xin Wang, 稲木康一郎, Karl D. Hobart, Michael A. Mastro, Adam J. Hauser	2025	0
3	Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance IEEE Transactions on Electron Devices ·Karkan Delara, Grazielli Fernandes, G. Stridh, Daniel G. Georgiev, Raghav Khanna, Alan G. Jacobs, James Spencer Lundh, James C. Gallagher, Andrew D. Koehler, Karl D. Hobart, Travis J. Anderson	2024	3
4	Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide Nano Letters ·E VLarson, Nadeemullah A. Mahadik, James C. Gallagher, Mario Coriasco, 梁心远, Dagmar Zemanova, John Mwita, Nabil Bassim, Thomas Taubner, Joshua D. Caldwell	2024	1
5	Improving vertical GaN p–n diode performance with room temperature defect mitigation Semiconductor Science and Technology ·S. C. Esparza-Gonzáles, James C. Gallagher, Alan G. Jacobs, Karl D. Hobart, Travis J. Anderson, Brendan Gunning, Robert Kaplar, Douglas E. Wolfe, Aman Haque	2023	1
6	Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes Applied Physics Express ·Mona A. Ebrish, Matthew Porter, Alan G. Jacobs, James C. Gallagher, Robert Kaplar, Brendan Gunning, Karl D. Hobart, Travis J. Anderson	2023	2
7	Scaled Projections of Empirically Verified Hybrid Edge Terminated Vertical GaN Diodes to 20 kV Grazielli Fernandes, Karkan Delara, Daniel G. Georgiev, Raghav Khanna, G. Stridh, Alan G. Jacobs, James C. Gallagher, Andrew D. Koehler, Karl D. Hobart, Travis J. Anderson	2023	1
8	A Simple Edge Termination Design for Vertical GaN P-N Diodes IEEE Transactions on Electron Devices ·Karkan Delara, Grazielli Fernandes, Sonia Mari Fogiato, G. Stridh, Daniel G. Georgiev, Andrew D. Koehler, Travis J. Anderson, James C. Gallagher, Geoffrey M. Foster, Alan G. Jacobs, Mona A. Ebrish, Brendan Gunning, Robert Kaplar, Karl D. Hobart, Raghav Khanna	2022	17
9	Investigation of the Reverse Leakage Behavior and Substrate Defects in Vertical GaN Schottky and PIN Diodes ECS Journal of Solid State Science and Technology ·Yekan Wang, Michael E. Liao, Kenny Huynh, Carles Cant, James C. Gallagher, Travis J. Anderson, Xianrong Huang, Michael Wojcik, Mark S. Goorsky	2022	3
10	Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments Applied Physics Letters ·Geoffrey M. Foster, Andrew D. Koehler, Mona A. Ebrish, James C. Gallagher, Travis J. Anderson, Brenton A. Noesges, L. J. Brillson, Brendan Gunning, Karl D. Hobart, Francis J. Kub	2020	21
11	A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes IEEE Transactions on Semiconductor Manufacturing ·Mona A. Ebrish, Travis J. Anderson, Andrew D. Koehler, Geoffrey M. Foster, James C. Gallagher, Robert Kaplar, Brendan Gunning, Karl D. Hobart	2020	5
12	Structural and electronic properties of Si- and Sn-doped (−201) β-Ga ₂ O ₃ annealed in nitrogen and oxygen atmospheres Journal of Physics D Applied Physics ·Marko J. Tadjer, Jaime A. Freitas, James C. Culbertson, Marc H. Weber, E. R. Glaser, A. Mock, Nadeemullah A. Mahadik, P Widler, Eric M. Jackson, James C. Gallagher, Boris N. Feigelson, Akito Kuramata	2020	34
13	Characterization of β-Ga ₂ O ₃ homoepitaxial films and MOSFETs grown by MOCVD at high growth rates Journal of Physics D Applied Physics ·Marko J. Tadjer, Fikadu Alema, A. Osinsky, Michael A. Mastro, Neeraj Nepal, J. Woodward, Rachael L. Myers‐Ward, E. R. Glaser, Jaime A. Freitas, Alan G. Jacobs, James C. Gallagher, A. Mock, Daniel J. Pennachio, C. Feigl, Mona A. Ebrish, Travis J. Anderson, Karl D. Hobart, Jennifer K. Hite, Charles R. Eddy	2020	35
14	Room-temperature skyrmions in strain-engineered FeGe thin films Physical review. B. ·P G Inouye, Guillermo Cabanes, 宋继龙, 吴举国, H. C.P.F. Roelen, Brian D. Hoskins, Arashdeep Singh Thind, Albina Y. Borisevich, Michelle E. Jamer, Travis J. Anderson, Andrew D. Koehler, Karl D. Hobart, 蔡育儒, D. Heiman, Tim Mewes, Rohan Mishra, James C. Gallagher, Adam J. Hauser	2020	19
15	Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation IEEE Transactions on Semiconductor Manufacturing ·James C. Gallagher, Francis J. Kub, Travis J. Anderson, Andrew D. Koehler, Geoffrey M. Foster, Alan G. Jacobs, Boris N. Feigelson, Michael A. Mastro, Jennifer K. Hite, Karl D. Hobart	2019	5
16	GaN-On-Diamond HEMT Technology With T_AVG = 176°C at P_DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging IEEE Electron Device Letters ·Marko J. Tadjer, Travis J. Anderson, Mario G. Ancona, Peter E. Raad, Pavel L. Komarov, Tingyu Bai, James C. Gallagher, Andrew D. Koehler, Mark S. Goorsky, Daniel Francis, Karl D. Hobart, Fritz J. Kub	2019	75
17	Demonstration of CuI as a P–N heterojunction toβ-Ga₂O₃ Applied Physics Express ·James C. Gallagher, Andrew D. Koehler, Marko J. Tadjer, Sri Yunita, Travis J. Anderson, P G Inouye, 宋继龙, Adam J. Hauser, Karl D. Hobart, Francis J. Kub	2019	19
18	Dusty plasma (Yukawa) rings Physics of Plasmas ·T. E. Sheridan, James C. Gallagher	2016	8
19	Doping and strain dependence of the electronic band structure in Ge and GeSn alloys Bulletin of the American Physical Society ·Chi Xu, James C. Gallagher, Charutha Senaratne, Christopher Brown, Ming-Ming You, Stefan Zollner, John Kouvetakis, J. Menéndez	2015	1
20	Experimental observation of soliton propagation and annihilation in a hydromechanical array of one-way coupled oscillators Physical Review E ·John F. Lindner, O. Riu Martinez, Patrick Odenthal, James C. Gallagher, George Tapinos	2008	7

About James C. Gallagher

James C. Gallagher is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment and Materials Chemistry, having authored 49 papers that have together received 562 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (33 papers), Ga2O3 and related materials (19 papers), Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor materials and devices (16 papers), ZnO doping and properties (13 papers), Advanced Photocatalysis Techniques (6 papers), Electronic and Structural Properties of Oxides (4 papers) and Metal and Thin Film Mechanics (3 papers). The work is most often cited by research in Condensed Matter Physics (319 citations), Electronic, Optical and Magnetic Materials (325 citations), Materials Chemistry (274 citations), Renewable Energy, Sustainability and the Environment (93 citations) and Electrical and Electronic Engineering (278 citations). James C. Gallagher has collaborated with scholars based in United States, Germany and Romania. Frequent co-authors include Travis J. Anderson, Karl D. Hobart, Andrew D. Koehler, Marko J. Tadjer, Michael A. Mastro, Jennifer K. Hite, Jaime A. Freitas, Mona A. Ebrish, Alan G. Jacobs and Francis J. Kub. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, IEEE Transactions on Electron Devices, ECS Journal of Solid State Science and Technology and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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