Anindya Nath

747 total citations
43 papers, 591 citations indexed

About

Anindya Nath is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Anindya Nath has authored 43 papers receiving a total of 591 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in Anindya Nath's work include Silicon Carbide Semiconductor Technologies (20 papers), Semiconductor materials and devices (14 papers) and Graphene research and applications (13 papers). Anindya Nath is often cited by papers focused on Silicon Carbide Semiconductor Technologies (20 papers), Semiconductor materials and devices (14 papers) and Graphene research and applications (13 papers). Anindya Nath collaborates with scholars based in United States, Italy and Australia. Anindya Nath's co-authors include Andrew D. Koehler, Karl D. Hobart, Marko J. Tadjer, Travis J. Anderson, Mulpuri V. Rao, D. Kurt Gaskill, Boris N. Feigelson, Roberta Nipoti, Rachael L. Myers‐Ward and Virginia D. Wheeler and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Anindya Nath

41 papers receiving 578 citations

Peers

Anindya Nath

EEE

CMP

EOMM

AMPO

Jr‐Tai Chen Sweden

Idriss Abid France

R. Held Germany

Duo Cao China

J.M. Li China

Matthew Charles France

Reet Chaudhuri United States

A. L. Syrkin United States

Marcello Cioni Italy

Yuichi Sato Japan

Jr‐Tai Chen Sweden

Anindya Nath

336 ×0.8

EEE

469 ×1.8

CMP

186 ×0.8

258 ×1.4

EOMM

120 ×0.8

AMPO

Citations per year, relative to Anindya Nath Anindya Nath (= 1×) peers Jr‐Tai Chen

Countries citing papers authored by Anindya Nath

Since Specialization

Citations

This map shows the geographic impact of Anindya Nath's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Anindya Nath with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Anindya Nath more than expected).

Fields of papers citing papers by Anindya Nath

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Anindya Nath. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Anindya Nath. The network helps show where Anindya Nath may publish in the future.

Co-authorship network of co-authors of Anindya Nath

This figure shows the co-authorship network connecting the top 25 collaborators of Anindya Nath. A scholar is included among the top collaborators of Anindya Nath based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Anindya Nath. Anindya Nath is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nath, Anindya, et al.. (2025). Probing the mechanistic role of the catalyst layer microstructure in proton exchange membrane water electrolyzers. Journal of Materials Chemistry A. 13(16). 11793–11803. 1 indexed citations

Lock, Evgeniya H., Joseph Prestigiacomo, Pratibha Dev, et al.. (2020). Quantum transport in functionalized epitaxial graphene without electrostatic gating. Carbon. 175. 490–498. 4 indexed citations

Tadjer, Marko J., Fritz J. Kub, Peter E. Raad, et al.. (2018). Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance. IEEE Journal of the Electron Devices Society. 6. 922–930. 15 indexed citations

Fatimy, A. El, Anindya Nath, Byoung Don Kong, et al.. (2018). Ultra‐broadband photodetectors based on epitaxial graphene quantum dots. Nanophotonics. 7(4). 735–740. 27 indexed citations

Zhang, Yuhao, Zhihong Liu, Marko J. Tadjer, et al.. (2017). Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation. IEEE Electron Device Letters. 38(8). 1097–1100. 148 indexed citations

Prestigiacomo, Joseph, Anindya Nath, M. S. Osofsky, et al.. (2017). Determining the nature of the gap in semiconducting graphene. Scientific Reports. 7(1). 41713–41713. 11 indexed citations

Tadjer, Marko J., Peter E. Raad, Tatyana I. Feygelson, et al.. (2017). Quantifying substrate removal induced electrothermal degradation in AlGaN/GaN HEMTs. 1–2. 3 indexed citations

Tadjer, Marko J., Michael A. Mastro, Anindya Nath, et al.. (2017). Mechanical Exfoliation of Large Area (100) β-Ga₂O₃ Onto Arbitrary Substrates for High Power Devices. ECS Meeting Abstracts. MA2017-02(29). 1233–1233. 1 indexed citations

Koehler, Andrew D., Travis J. Anderson, Ani Khachatrian, et al.. (2017). High Voltage GaN Lateral Photoconductive Semiconductor Switches. ECS Journal of Solid State Science and Technology. 6(11). S3099–S3102. 22 indexed citations

10.

Daniels, Kevin M., Mohsen Jadidi, A. B. Sushkov, et al.. (2017). Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene. 2D Materials. 4(2). 25034–25034. 33 indexed citations

11.

Feigelson, Boris N., James A. Wollmershauser, Jennifer K. Hite, et al.. (2017). Electrochemically Prepared Polycrystalline Copper Surface for the Growth of Hexagonal Boron Nitride. Crystal Growth & Design. 17(4). 1669–1678. 11 indexed citations

12.

Daniels, Kevin M., Mohsen Jadidi, A. B. Sushkov, et al.. (2016). Narrow terahertz plasmon resonance of quasi-freestanding bilayer epitaxial graphene. 1–2.

13.

Osofsky, M. S., Sandra C. Hernández, Anindya Nath, et al.. (2016). Functionalized graphene as a model system for the two-dimensional metal-insulator transition. Scientific Reports. 6(1). 19939–19939. 12 indexed citations

14.

Nath, Anindya, Marc Currie, Anthony K. Boyd, et al.. (2016). In search of quantum-limited contact resistance: understanding the intrinsic and extrinsic effects on the graphene–metal interface. 2D Materials. 3(2). 25013–25013. 13 indexed citations

15.

Koehler, Andrew D., Travis J. Anderson, Marko J. Tadjer, et al.. (2016). Vertical GaN junction barrier schottky diodes by Mg implantation and activation annealing. 5. 344–346. 1 indexed citations

16.

Parisini, A., et al.. (2015). Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC. Journal of Applied Physics. 118(3). 18 indexed citations

17.

Mahadik, Nadeemullah A., Robert E. Stahlbush, Anindya Nath, et al.. (2014). Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers. Materials science forum. 778-780. 324–327. 3 indexed citations

18.

Nath, Anindya, et al.. (2014). Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes. 1–4. 2 indexed citations

19.

Hernández, Sandra C., Virginia D. Wheeler, M. S. Osofsky, et al.. (2013). Plasma-based chemical modification of epitaxial graphene with oxygen functionalities. Surface and Coatings Technology. 241. 8–12. 20 indexed citations

20.

Nipoti, Roberta, et al.. (2011). Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC. Materials science forum. 679-680. 393–396. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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