Jordan D. Greenlee

1.2k citations

40 papers · 994 indexed · h-index 19

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 24
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 10
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 22
- Advanced Memory and Neural Computing 6
- Silicon Carbide Semiconductor Technologies 5
Materials Chemistry
- ZnO doping and properties 9
Renewable Energy, Sustainability and the Environment
Polymers and Plastics
- Transition Metal Oxide Nanomaterials 6
Mechanics of Materials
- Metal and Thin Film Mechanics 5

Co-authors: Karl D. Hobart Travis J. Anderson Jennifer K. Hite Francis J. Kub Andrew D. Koehler Boris N. Feigelson Marko J. Tadjer W. Alan Doolittle
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Partner nations: United States Germany

In The Last Decade

Jordan D. Greenlee

40 papers receiving 974 citations

Peers

Countries citing papers authored by Jordan D. Greenlee

Since Specialization

Citations

This map shows the geographic impact of Jordan D. Greenlee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jordan D. Greenlee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jordan D. Greenlee more than expected).

Fields of papers citing papers by Jordan D. Greenlee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jordan D. Greenlee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jordan D. Greenlee. The network helps show where Jordan D. Greenlee may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Jordan D. Greenlee, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jordan D. Greenlee Line = papers co-authored together Jordan D. Greenlee links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Hyperspectral Electroluminescence Characterization of OFF-State Device Characteristics in Proton Irradiated High Voltage AlGaN/GaN HEMTs Travis J. Anderson,Andrew D. Koehler,Jaime A. Freitas,B. D. Weaver,Jordan D. Greenlee,Marko J. Tadjer,Eugene A. Imhoff,Karl D. Hobart,Francis J. Kub	2016	10
2	Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension Travis J. Anderson,Jordan D. Greenlee,Boris N. Feigelson,Jennifer K. Hite,Fritz J. Kub,Karl D. Hobart	2016	36
3	Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices Travis J. Anderson,Jordan D. Greenlee,Boris N. Feigelson,Jennifer K. Hite,Karl D. Hobart,Francis J. Kub	2016	32
4	Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs Andrew D. Koehler,Travis J. Anderson,Marko J. Tadjer,B. D. Weaver,Jordan D. Greenlee,David I. Shahin,Karl D. Hobart,Francis J. Kub	2016	37
5	Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing Jordan D. Greenlee,Brendan Gunning,Boris N. Feigelson,Travis J. Anderson,Andrew D. Koehler,Karl D. Hobart,Francis J. Kub,W. Alan Doolittle	2016	11
6	Characterization of an Mg‐implanted GaN p–i–n diode Jordan D. Greenlee,Travis J. Anderson,Boris N. Feigelson,Karl D. Hobart,Francis J. Kub	2015	34
7	Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing Marko J. Tadjer,Boris N. Feigelson,Jordan D. Greenlee,Jaime A. Freitas,Travis J. Anderson,Jennifer K. Hite,Laura B. Ruppalt,Charles R. Eddy,Karl D. Hobart,Fritz J. Kub	2015	45
8	Temporary Bonding with Polydimethylglutarimide Based Lift Off Resist as a Layer Transfer Platform Takashi Matsumae,Andrew D. Koehler,Jordan D. Greenlee,Travis J. Anderson,Helmut Baumgart,Glenn G. Jernigan,Karl D. Hobart,Fritz J. Kub	2015	5
9	Molecular beam epitaxy growth of niobium oxides by solid/liquid state oxygen source and lithium assisted metal-halide chemistry M. Brooks Tellekamp,Jordan D. Greenlee,Joshua C. Shank,W. Alan Doolittle	2015	7
10	Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing Marko J. Tadjer,Nadeemullah A. Mahadik,Boris N. Feigelson,Robert E. Stahlbush,Eugene A. Imhoff,P. B. Klein,Jaime A. Freitas,Jordan D. Greenlee,Fritz J. Kub	2015	1
11	Thermal etching of nanocrystalline diamond films David I. Shahin,Travis J. Anderson,Tatyana I. Feygelson,Bradford B. Pate,Virginia D. Wheeler,Jordan D. Greenlee,Jennifer K. Hite,Marko J. Tadjer,A. Christou,Karl D. Hobart	2015	10
12	Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates Travis J. Anderson,Marko J. Tadjer,Jennifer K. Hite,Jordan D. Greenlee,Andrew D. Koehler,Karl D. Hobart,Fritz J. Kub	2015	55
13	(Invited) Vertical GaN p-i-n Diodes Formed by Mg Ion Implantation Travis J. Anderson,Jordan D. Greenlee,Boris N. Feigelson,Jennifer K. Hite,Karl D. Hobart,Francis J. Kub	2015	5
14	Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation Andrew D. Koehler,Travis J. Anderson,Jennifer K. Hite,B. D. Weaver,Marko J. Tadjer,Michael A. Mastro,Jordan D. Greenlee,Petra Specht,Matthew Porter,T.R. Weatherford,Karl D. Hobart,Fritz J. Kub	2014	10
15	Liquid Phase Electro-Epitaxy of Memristive LiNbO₂ Crystals Jordan D. Greenlee,Joshua C. Shank,M. Brooks Tellekamp,Brendan Gunning,Chloe A. M. Fabien,W. Alan Doolittle	2014	16
16	Comparison of AlN encapsulants for high-temperature GaN annealing Jordan D. Greenlee,Travis J. Anderson,Boris N. Feigelson,Jennifer K. Hite,Konrad M. Bussmann,Charles R. Eddy,Karl D. Hobart,Francis J. Kub	2014	10
17	Radiation Effects on LiNbO$_2$ Memristors for Neuromorphic Computing Applications Jordan D. Greenlee,Joshua C. Shank,M. Brooks Tellekamp,En Xia Zhang,Jinshun Bi,Daniel M. Fleetwood,Michael L. Alles,Ronald D. Schrimpf,W. Alan Doolittle	2013	15
18	Spatiotemporal drift-diffusion simulations of analog ionic memristors Jordan D. Greenlee,Joshua C. Shank,M. Brooks Tellekamp,W. Alan Doolittle	2013	10
19	In-situ oxygen x-ray absorption spectroscopy investigation of the resistance modulation mechanism in LiNbO2 memristors Jordan D. Greenlee,Cole Petersburg,W. Laws Calley,Cherno Jaye,Daniel A. Fischer,Faisal M. Alamgir,W. Alan Doolittle	2012	32
20	Observation and control of the surface kinetics of InGaN for the elimination of phase separation Michael W. Moseley,Brendan Gunning,Jordan D. Greenlee,J. E. Lowder,Gon Namkoong,W. Alan Doolittle	2012	38

About Jordan D. Greenlee

Jordan D. Greenlee is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 40 papers that have together received 994 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (24 papers), Semiconductor materials and devices (22 papers), Ga2O3 and related materials (10 papers), ZnO doping and properties (9 papers), Advanced Memory and Neural Computing (6 papers), Transition Metal Oxide Nanomaterials (6 papers), Metal and Thin Film Mechanics (5 papers) and Silicon Carbide Semiconductor Technologies (5 papers). The work is most often cited by research in Condensed Matter Physics (620 citations), Electronic, Optical and Magnetic Materials (428 citations) and Electrical and Electronic Engineering (693 citations). Jordan D. Greenlee has collaborated with scholars based in United States and Germany. Frequent co-authors include Karl D. Hobart, Travis J. Anderson, Jennifer K. Hite, Francis J. Kub, Andrew D. Koehler, Boris N. Feigelson, Marko J. Tadjer, W. Alan Doolittle, B. D. Weaver and Fritz J. Kub.

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