S. Büchner

6.5k citations

227 papers · 4.9k indexed · h-index 37

Hardware and Architecture top 0.5%
- VLSI and Analog Circuit Testing 27
Electrical and Electronic Engineering top 0.5%
- Radiation Effects in Electronics 167
- Integrated Circuits and Semiconductor Failure Analysis 123
- Semiconductor materials and devices 87
- Advancements in Semiconductor Devices and Circuit Design 37
- Electrostatic Discharge in Electronics 20
Radiation top 2%
Instrumentation top 5%
Computational Mechanics top 2%
- Ion-surface interactions and analysis 18
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 15

Co-authors: Dale McMorrow Joseph S. Melinger A.B. Campbell M.P. Baze R.L. Pease A.R. Knudson Ani Khachatrian William T. Lotshaw
Cited by: Hardware and Architecture Electrical and Electronic Engineering Radiation
Journals: IEEE Transactions on Nuclear Science (158 papers)Optics Express (1 paper)Aerospace Science and Technology (1 paper)
Partner nations: United States France Germany

In The Last Decade

S. Büchner

224 papers receiving 4.7k citations

Peers

Countries citing papers authored by S. Büchner

Since Specialization

Citations

This map shows the geographic impact of S. Büchner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Büchner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Büchner more than expected).

Fields of papers citing papers by S. Büchner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Büchner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Büchner. The network helps show where S. Büchner may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Büchner, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Büchner Line = papers co-authored together S. Büchner links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation IEEE Transactions on Nuclear Science ·Natsuki SHIRAI,Ava Hajian,Andrew L. Sternberg,John A. Kozub,En Xia Zhang,Stephen LaLumondiere,Daniele M. Monahan,Lucie Bejstová,Ani Khachatrian,S. Büchner,Dale McMorrow,Joel M. Hales,Yuanfu Zhao,Liang Wang,Satoaki MATOBA,Robert A. Weller,Ronald D. Schrimpf,Sharon M. Weiss,Robert A. Reed	2021	10
2	Radiation Hardened Millimeter-Wave Receiver Implemented in 90-nm, SiGe HBT Technology IEEE Transactions on Nuclear Science ·Christian Ehrensberger,Achint Gupta,太田靖子,John D. Cressler,Hugh Barnaby,Ani Khachatrian,S. Büchner,Dale McMorrow,Saeed Zeinolabedinzadeh	2021	8
3	Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform IEEE Transactions on Nuclear Science ·George N. Tzintzarov,S. Büchner,Dale McMorrow,Jeffrey H. Warner,Mehmet Kaynak,Lars Zimmermann,John D. Cressler,Adrian Ildefonso,Patrick S. Goley,أ.د.نضال كمال الشريفين,G W Smart,Kristen Beck,Jeffrey W. Teng,悟志立山,Ani Khachatrian	2019	4
4	Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics Optics Express ·Joel M. Hales,Ani Khachatrian,Jeffrey H. Warner,S. Büchner,Adrian Ildefonso,George N. Tzintzarov,G W Smart,Daniele M. Monahan,Stephen LaLumondiere,John D. Cressler,Dale McMorrow	2019	8
5	Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI IEEE Transactions on Nuclear Science ·Adrian Ildefonso,Jeffrey H. Warner,John D. Cressler,George N. Tzintzarov,G W Smart,安井禎,Patrick S. Goley,Joel M. Hales,Ani Khachatrian,S. Büchner,Dale McMorrow	2019	14
6	The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs IEEE Transactions on Nuclear Science ·Ani Khachatrian,S. Büchner,Andrew D. Koehler,Nikola Lopac,Dale McMorrow,S. D. LaLumondiere,María Pilar Nicolás,Lucie Bejstová,Adam C. Scofield,Dale Brewe	2019	23
7	New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles IEEE Transactions on Nuclear Science ·Joel M. Hales,John D. Cressler,Dale McMorrow,Ani Khachatrian,S. Büchner,Jeffrey H. Warner,Adrian Ildefonso,George N. Tzintzarov,G W Smart,Daniele M. Monahan,Stephen LaLumondiere	2019	21
8	Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs IEEE Transactions on Nuclear Science ·Adrian Ildefonso,Zachary E. Fleetwood,George N. Tzintzarov,Joel M. Hales,G W Smart,أ.د.نضال كمال الشريفين,Ani Khachatrian,S. Büchner,Dale McMorrow,Jeffrey H. Warner,Joseph Harms,Anna Erickson,K Matsubara,Véronique Ferlet-Cavrois,John D. Cressler	2018	20
9	Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam IEEE Transactions on Nuclear Science ·Ani Khachatrian,Nicolas J.-H. Roche,S. Büchner,Andrew D. Koehler,Travis J. Anderson,Dale McMorrow,S. D. LaLumondiere,Lucie Bejstová,María Pilar Nicolás,Dale Brewe	2018	16
10	Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in ${\text {Al}}_{x} {\text {Ga}}_{1-x}$ N/GaN HEMTs IEEE Transactions on Nuclear Science ·Ani Khachatrian,Nicolas J.-H. Roche,Laura B. Ruppalt,James G. Champlain,S. Büchner,Andrew D. Koehler,Travis J. Anderson,Karl D. Hobart,Jeffrey H. Warner,Dale McMorrow	2017	5
11	Modeling and Investigations on TID-ASETs Synergistic Effect in LM124 Operational Amplifier From Three Different Manufacturers IEEE Transactions on Nuclear Science ·Rizal Yan,L. Dusseau,Ani Khachatrian,André Joris,Nazi̇f Kürkçüoǧlu,J.-R. Vaillé,J. Boch,Jeffrey H. Warner,ZHIRONG HUAN,S. Büchner,Dale McMorrow,Paulo F. Ribeiro,Alexander Blumrosen,B. Azaïs,R. Marec,P. Calvel,F. Bezerra,R. Ecoffet	2013	22
12	Impact of Switched Dose-Rate Irradiation on the Response of the LM124 Operational Amplifier to Pulsed X-Rays IEEE Transactions on Nuclear Science ·Nicolas J.-H. Roche,L. Dusseau,Prabir Kumar Halder,Ch. Vibert,Мд.Р. Миях,زهرا فکری راد,J. Boch,Frédéric Saigné,R. Marec,P. Calvel,F. Bezerra,Alexander Blumrosen,B. Azaïs,S. Büchner	2011	21
13	A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal IEEE Transactions on Nuclear Science ·P. Burton,S. Büchner,Dale McMorrow,H.L. Hughes,Bobby Sidhu,Susan Zivkovich Clark,Liu Xiao-wan	2010	19
14	Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits IEEE Transactions on Nuclear Science ·K Horbachevska,زهرا فکری راد,L. Dusseau,J. Boch,Мд.Р. Миях,Frédéric Saigné,B. Azaïs,Alexander Blumrosen,E. Lorfèvre,新井史人,S. Büchner,Jean‐Pierre David,R. Marec,P. Calvel	2009	20
15	Compendium of Recent Total Ionizing Dose Results for Candidate Spacecraft Electronics for NASA Nkem Ernest Njukang,S. Büchner,Anthony B. Sanders,Kenneth A. LaBel,Martin A. Carts,C. Poivey,Timothy R. Oldham,Raymond L. Ladbury,Martha V. O'Bryan,Guosheng Wang	2008	13
16	Compendium of Current Single Event Effects Results for Candidate Spacecraft Electronics for NASA Martha V. O'Bryan,C. Poivey,Kenneth A. LaBel,S. Büchner,Ray Ladbury,Timothy R. Oldham,J. A. Howard,W.W. ROBSON,Melanie D. Berg,(unknown)	2007	34
17	Focused-lon-beam assisted bipolar transistor characterization and analog single-event transient circuit analysis of the OP27 孝宏伊東,L. W. Massengill,Y. Boulghassoul,Andrew L. Sternberg,Robert A. Weller,S. Büchner,Dale McMorrow,M.W. Savage	2003	2
18	Development of a test methodology for single-event transients (SETs) in linear devices IEEE Transactions on Nuclear Science ·C. Poivey,J.W. Howard,S. Büchner,K.A. LaBel,P. Somalaxmi,Mohammad Mohammadi,Arjang A. Assad	2001	18
19	Charge-enhancement mechanisms of GaAs field-effect transistors: Experiment and simulation IEEE Transactions on Nuclear Science ·Dale McMorrow,Joseph S. Melinger,A.R. Knudson,S. Büchner,M. B.Ch. B. L'pool,A.B. Campbell,W.R. Curtice	1998	24
20	Transient charge collection from ion tracks in semiconductors Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Dale McMorrow,A.B. Campbell,A.R. Knudson,S. Büchner,T.R. Weatherford	1992	4

About S. Büchner

S. Büchner is a scholar working on Hardware and Architecture, Electrical and Electronic Engineering, Nuclear Energy and Engineering, Instrumentation and Safety, Risk, Reliability and Quality, having authored 227 papers that have together received 4.9k indexed citations. Recurring topics across this work include Radiation Effects in Electronics (167 papers), Integrated Circuits and Semiconductor Failure Analysis (123 papers), Semiconductor materials and devices (87 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers), VLSI and Analog Circuit Testing (27 papers), Electrostatic Discharge in Electronics (20 papers), Ion-surface interactions and analysis (18 papers) and Semiconductor Quantum Structures and Devices (15 papers). The work is most often cited by research in Hardware and Architecture (1.2k citations), Electrical and Electronic Engineering (4.6k citations), Radiation (276 citations), Instrumentation (106 citations) and Computational Mechanics (417 citations). S. Büchner has collaborated with scholars based in United States, France and Germany. Frequent co-authors include Dale McMorrow, Joseph S. Melinger, A.B. Campbell, M.P. Baze, R.L. Pease, A.R. Knudson, Ani Khachatrian, William T. Lotshaw, L. W. Massengill and Jeffrey H. Warner. Their work appears in journals such as IEEE Transactions on Nuclear Science, Optics Express, Aerospace Science and Technology, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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