S. Büchner

6.5k total citations
227 papers, 4.9k citations indexed

About

S. Büchner is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Computational Mechanics. According to data from OpenAlex, S. Büchner has authored 227 papers receiving a total of 4.9k indexed citations (citations by other indexed papers that have themselves been cited), including 213 papers in Electrical and Electronic Engineering, 38 papers in Hardware and Architecture and 22 papers in Computational Mechanics. Recurrent topics in S. Büchner's work include Radiation Effects in Electronics (167 papers), Integrated Circuits and Semiconductor Failure Analysis (123 papers) and Semiconductor materials and devices (87 papers). S. Büchner is often cited by papers focused on Radiation Effects in Electronics (167 papers), Integrated Circuits and Semiconductor Failure Analysis (123 papers) and Semiconductor materials and devices (87 papers). S. Büchner collaborates with scholars based in United States, France and Germany. S. Büchner's co-authors include Dale McMorrow, Joseph S. Melinger, A.B. Campbell, M.P. Baze, R.L. Pease, A.R. Knudson, Ani Khachatrian, William T. Lotshaw, L. W. Massengill and Jeffrey H. Warner and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. Büchner

224 papers receiving 4.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Büchner United States 37 4.6k 1.2k 417 343 292 227 4.9k
P.E. Dodd United States 45 7.1k 1.5× 1.9k 1.7× 225 0.5× 385 1.1× 230 0.8× 154 7.3k
M.R. Shaneyfelt United States 53 8.9k 1.9× 1.2k 1.0× 250 0.6× 858 2.5× 389 1.3× 209 9.2k
A.B. Campbell United States 29 2.5k 0.5× 435 0.4× 234 0.6× 123 0.4× 192 0.7× 132 2.7k
V. Ferlet-Cavrois France 34 3.3k 0.7× 693 0.6× 84 0.2× 145 0.4× 101 0.3× 114 3.4k
Timothy R. Oldham United States 28 3.3k 0.7× 259 0.2× 153 0.4× 351 1.0× 183 0.6× 83 3.4k
F.W. Sexton United States 34 3.1k 0.7× 555 0.5× 186 0.4× 192 0.6× 113 0.4× 81 3.2k
Simone Gerardin Italy 27 2.7k 0.6× 360 0.3× 77 0.2× 203 0.6× 91 0.3× 196 2.9k
R.L. Pease United States 40 4.2k 0.9× 330 0.3× 55 0.1× 304 0.9× 102 0.3× 123 4.3k
P. V. Dressendorfer United States 28 4.0k 0.9× 181 0.2× 126 0.3× 988 2.9× 440 1.5× 59 4.4k
Cheryl J. Marshall United States 23 1.8k 0.4× 271 0.2× 66 0.2× 93 0.3× 140 0.5× 84 2.0k

Countries citing papers authored by S. Büchner

Since Specialization
Citations

This map shows the geographic impact of S. Büchner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Büchner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Büchner more than expected).

Fields of papers citing papers by S. Büchner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Büchner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Büchner. The network helps show where S. Büchner may publish in the future.

Co-authorship network of co-authors of S. Büchner

This figure shows the co-authorship network connecting the top 25 collaborators of S. Büchner. A scholar is included among the top collaborators of S. Büchner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Büchner. S. Büchner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sternberg, Andrew L., John A. Kozub, En Xia Zhang, et al.. (2021). Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation. IEEE Transactions on Nuclear Science. 68(5). 626–633. 10 indexed citations
2.
Cressler, John D., Hugh Barnaby, Ani Khachatrian, et al.. (2021). Radiation Hardened Millimeter-Wave Receiver Implemented in 90-nm, SiGe HBT Technology. IEEE Transactions on Nuclear Science. 69(10). 2154–2161. 8 indexed citations
3.
Tzintzarov, George N., S. Büchner, Dale McMorrow, et al.. (2019). Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform. IEEE Transactions on Nuclear Science. 67(1). 260–267. 4 indexed citations
4.
Hales, Joel M., Ani Khachatrian, Jeffrey H. Warner, et al.. (2019). Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics. Optics Express. 27(26). 37652–37652. 8 indexed citations
5.
Ildefonso, Adrian, Jeffrey H. Warner, John D. Cressler, et al.. (2019). Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI. IEEE Transactions on Nuclear Science. 67(1). 71–80. 14 indexed citations
6.
Khachatrian, Ani, S. Büchner, Andrew D. Koehler, et al.. (2019). The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs. IEEE Transactions on Nuclear Science. 66(7). 1682–1687. 23 indexed citations
7.
Hales, Joel M., John D. Cressler, Dale McMorrow, et al.. (2019). New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles. IEEE Transactions on Nuclear Science. 67(1). 81–90. 21 indexed citations
8.
Ildefonso, Adrian, Zachary E. Fleetwood, George N. Tzintzarov, et al.. (2018). Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs. IEEE Transactions on Nuclear Science. 66(1). 359–367. 20 indexed citations
9.
Khachatrian, Ani, Nicolas J.-H. Roche, S. Büchner, et al.. (2018). Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam. IEEE Transactions on Nuclear Science. 66(1). 368–375. 16 indexed citations
10.
Khachatrian, Ani, Nicolas J.-H. Roche, Laura B. Ruppalt, et al.. (2017). Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in ${\text {Al}}_{x} {\text {Ga}}_{1-x}$ N/GaN HEMTs. IEEE Transactions on Nuclear Science. 65(1). 369–375. 5 indexed citations
11.
Dusseau, L., Ani Khachatrian, J.-R. Vaillé, et al.. (2013). Modeling and Investigations on TID-ASETs Synergistic Effect in LM124 Operational Amplifier From Three Different Manufacturers. IEEE Transactions on Nuclear Science. 60(6). 4430–4438. 22 indexed citations
12.
Roche, Nicolas J.-H., L. Dusseau, J. Boch, et al.. (2011). Impact of Switched Dose-Rate Irradiation on the Response of the LM124 Operational Amplifier to Pulsed X-Rays. IEEE Transactions on Nuclear Science. 58(3). 960–968. 21 indexed citations
13.
Büchner, S., et al.. (2010). A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal. IEEE Transactions on Nuclear Science. 57(6). 3414–3418. 19 indexed citations
14.
Dusseau, L., J. Boch, Frédéric Saigné, et al.. (2009). Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits. IEEE Transactions on Nuclear Science. 56(4). 1971–1977. 20 indexed citations
15.
Büchner, S., Anthony B. Sanders, Kenneth A. LaBel, et al.. (2008). Compendium of Recent Total Ionizing Dose Results for Candidate Spacecraft Electronics for NASA. 5–10. 13 indexed citations
16.
O'Bryan, Martha V., C. Poivey, Kenneth A. LaBel, et al.. (2007). Compendium of Current Single Event Effects Results for Candidate Spacecraft Electronics for NASA. 153–161. 34 indexed citations
17.
Massengill, L. W., Y. Boulghassoul, Andrew L. Sternberg, et al.. (2003). Focused-lon-beam assisted bipolar transistor characterization and analog single-event transient circuit analysis of the OP27. 133–140. 2 indexed citations
18.
Poivey, C., et al.. (2001). Development of a test methodology for single-event transients (SETs) in linear devices. IEEE Transactions on Nuclear Science. 48(6). 2180–2186. 18 indexed citations
19.
McMorrow, Dale, Joseph S. Melinger, A.R. Knudson, et al.. (1998). Charge-enhancement mechanisms of GaAs field-effect transistors: Experiment and simulation. IEEE Transactions on Nuclear Science. 45(3). 1494–1500. 24 indexed citations
20.
McMorrow, Dale, A.B. Campbell, A.R. Knudson, S. Büchner, & T.R. Weatherford. (1992). Transient charge collection from ion tracks in semiconductors. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 67(1-4). 384–389. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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