Ani Khachatrian

1.9k citations

109 papers · 1.5k indexed · h-index 21

Impact in

Electrical and Electronic Engineering top 5%
- Radiation Effects in Electronics
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials

Papers in

Electrical and Electronic Engineering 88
- Radiation Effects in Electronics 61
- Semiconductor materials and devices 43
- Integrated Circuits and Semiconductor Failure Analysis 38
- Advancements in Semiconductor Devices and Circuit Design 24
- Radio Frequency Integrated Circuit Design 9
Instrumentation 4

Co-authors: Dale McMorrow S. Büchner Joseph S. Melinger Jeffrey H. Warner Adrian Ildefonso Nicolas J.-H. Roche Igor L. Medintz Susan Buckhout‐White
Journals: IEEE Transactions on Nuclear Science (67 papers)ECS Journal of Solid State Science and Technology (5 papers)The Journal of Physical Chemistry A (3 papers)Applied Physics Letters (2 papers)The Journal of Chemical Physics (2 papers)
Partner nations: United States France Netherlands

In The Last Decade

Ani Khachatrian

104 papers receiving 1.5k citations

Peers

Countries citing papers authored by Ani Khachatrian

Since Specialization

Citations

This map shows the geographic impact of Ani Khachatrian's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ani Khachatrian with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ani Khachatrian more than expected).

Fields of papers citing papers by Ani Khachatrian

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ani Khachatrian. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ani Khachatrian. The network helps show where Ani Khachatrian may publish in the future.

Co-authors

The 25 scholars most cited alongside Ani Khachatrian, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ani Khachatrian Line = papers co-authored together Ani Khachatrian links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Enhancing radiation hardness of microelectronics through stress-relief milling Applied Physics Letters ·Sergei P. Stepanoff, Ani Khachatrian, Aman Haque, F. Ren, S. J. Pearton, Douglas E. Wolfe	2025	0
2	Single-Event Transients in Vertical GaN Diodes With N-Implanted Hybrid Edge Termination IEEE Transactions on Nuclear Science ·Andrew D. Koehler, Ani Khachatrian, Alan G. Jacobs, James Spencer Lundh, Adrian Ildefonso, Cory D. Cress, Geoffrey M. Foster, Tolen Nelson, Daniel G. Georgiev, Raghav Khanna, Karl D. Hobart, Travis J. Anderson	2025	0
3	Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA IEEE Transactions on Nuclear Science ·Delgermaa Nergui, Zachary R. Brumbach, Adrian Ildefonso, Jeffrey W. Teng, Sunil G. Rao, Brett L. Ringel, Ani Khachatrian, Dale McMorrow, John D. Cressler	2024	1
4	Electric Orbit Raising Radiation-Induced Coverglass Darkening and Its Impact on III-V Multijunction Solar Cell Performance IEEE Journal of Photovoltaics ·Samuel Beyene, Bao Hoang, Catherine C. Keys, B. D. Weaver, Ani Khachatrian	2024	1
5	The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs IEEE Transactions on Nuclear Science ·Adrian Ildefonso, Joel M. Hales, Ani Khachatrian, Jeffrey W. Teng, George N. Tzintzarov, Delgermaa Nergui, Brett L. Ringel, Uppili S. Raghunathan, Vibhor Jain, John D. Cressler, Dale McMorrow	2023	3
6	Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs IEEE Transactions on Nuclear Science ·Zachary R. Brumbach, Delgermaa Nergui, Jeffrey W. Teng, Yaw A. Mensah, Delwyn G. Sam, Adrian Ildefonso, Ani Khachatrian, Dale McMorrow, John D. Cressler	2023	2
7	Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier IEEE Transactions on Nuclear Science ·Delgermaa Nergui, Jeffrey W. Teng, Zachary R. Brumbach, Adrian Ildefonso, Sunil G. Rao, Ani Khachatrian, Dale McMorrow, John D. Cressler	2023	3
8	Analysis of Optical Single-Event Transients in Integrated Silicon Photonics Mach–Zehnder Modulators for Space-Based Optical Communications IEEE Transactions on Nuclear Science ·Mozhgan Hosseinzadeh, Jeffrey W. Teng, Delgermaa Nergui, Brett L. Ringel, Adrian Ildefonso, Ani Khachatrian, Dale McMorrow, John D. Cressler	2023	1
9	Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga ₂ O ₃ ECS Journal of Solid State Science and Technology ·Xinyi Xia, Jian-Sian Li, Ribhu Sharma, F. Ren, Md Abu Jafar Rasel, Sergei P. Stepanoff, Nahid Sultan Al‐Mamun, Aman Haque, Douglas E. Wolfe, Sushrut Modak, Leonid Chernyak, Mark E. Law, Ani Khachatrian, S. J. Pearton	2022	35
10	Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation IEEE Transactions on Nuclear Science ·Kaitlyn L. Ryder, Landen D. Ryder, Andrew L. Sternberg, John A. Kozub, En Xia Zhang, Stephen LaLumondiere, Daniele M. Monahan, Jeremy P. Bonsall, Ani Khachatrian, S. Büchner, Dale McMorrow, Joel M. Hales, Yuanfu Zhao, Liang Wang, Chuanmin Wang, Robert A. Weller, Ronald D. Schrimpf, Sharon M. Weiss, Robert A. Reed	2021	10
11	Radiation Hardened Millimeter-Wave Receiver Implemented in 90-nm, SiGe HBT Technology IEEE Transactions on Nuclear Science ·Ebrahim M. Al Seragi, Subhra Dash, K. Muthuseenu, John D. Cressler, Hugh Barnaby, Ani Khachatrian, S. Büchner, Dale McMorrow, Saeed Zeinolabedinzadeh	2021	8
12	Calculation of Thermophysical Characteristicsfrom First Principles D.A. Zakarian, Ani Khachatrian	2020	0
13	Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform IEEE Transactions on Nuclear Science ·George N. Tzintzarov, S. Büchner, Dale McMorrow, Jeffrey H. Warner, Mehmet Kaynak, Lars Zimmermann, John D. Cressler, Adrian Ildefonso, Patrick S. Goley, Milad Frounchi, Delgermaa Nergui, Sunil G. Rao, Jeffrey W. Teng, Jacob Campbell, Ani Khachatrian	2019	4
14	Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI IEEE Transactions on Nuclear Science ·Adrian Ildefonso, Jeffrey H. Warner, John D. Cressler, George N. Tzintzarov, Delgermaa Nergui, Anup P. Omprakash, Patrick S. Goley, Joel M. Hales, Ani Khachatrian, S. Büchner, Dale McMorrow	2019	14
15	The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs IEEE Transactions on Nuclear Science ·Ani Khachatrian, S. Büchner, Andrew D. Koehler, Chaffra A. Affouda, Dale McMorrow, S. D. LaLumondiere, E. C. Dillingham, Jeremy P. Bonsall, Adam C. Scofield, Dale Brewe	2019	23
16	New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles IEEE Transactions on Nuclear Science ·Joel M. Hales, John D. Cressler, Dale McMorrow, Ani Khachatrian, S. Büchner, Jeffrey H. Warner, Adrian Ildefonso, George N. Tzintzarov, Delgermaa Nergui, Daniele M. Monahan, Stephen LaLumondiere	2019	21
17	Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics Optics Express ·Joel M. Hales, Ani Khachatrian, Jeffrey H. Warner, S. Büchner, Adrian Ildefonso, George N. Tzintzarov, Delgermaa Nergui, Daniele M. Monahan, Stephen LaLumondiere, John D. Cressler, Dale McMorrow	2019	8
18	Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs IEEE Transactions on Nuclear Science ·Adrian Ildefonso, Zachary E. Fleetwood, George N. Tzintzarov, Joel M. Hales, Delgermaa Nergui, Milad Frounchi, Ani Khachatrian, S. Büchner, Dale McMorrow, Jeffrey H. Warner, Joseph Harms, Anna Erickson, Kay Obbe Voss, Véronique Ferlet-Cavrois, John D. Cressler	2018	20
19	Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam IEEE Transactions on Nuclear Science ·Ani Khachatrian, Nicolas J.-H. Roche, S. Büchner, Andrew D. Koehler, Travis J. Anderson, Dale McMorrow, S. D. LaLumondiere, Jeremy P. Bonsall, E. C. Dillingham, Dale Brewe	2018	16
20	Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in ${\text {Al}}_{x} {\text {Ga}}_{1-x}$ N/GaN HEMTs IEEE Transactions on Nuclear Science ·Ani Khachatrian, Nicolas J.-H. Roche, Laura B. Ruppalt, James G. Champlain, S. Büchner, Andrew D. Koehler, Travis J. Anderson, Karl D. Hobart, Jeffrey H. Warner, Dale McMorrow	2017	5

About Ani Khachatrian

Ani Khachatrian is a scholar working on Electrical and Electronic Engineering, Instrumentation, Spectroscopy, Condensed Matter Physics and Computational Mechanics, having authored 109 papers that have together received 1.5k indexed citations. Recurring topics across this work include Radiation Effects in Electronics (61 papers), Semiconductor materials and devices (43 papers), Integrated Circuits and Semiconductor Failure Analysis (38 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers), Ion-surface interactions and analysis (12 papers), Radio Frequency Integrated Circuit Design (9 papers), Spectroscopy and Laser Applications (9 papers) and GaN-based semiconductor devices and materials (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (993 citations), Condensed Matter Physics (137 citations), Instrumentation (35 citations), Electronic, Optical and Magnetic Materials (182 citations) and Hardware and Architecture (54 citations). Ani Khachatrian has collaborated with scholars based in United States, France and Netherlands. Frequent co-authors include Dale McMorrow, S. Büchner, Joseph S. Melinger, Jeffrey H. Warner, Adrian Ildefonso, Nicolas J.-H. Roche, Igor L. Medintz, Susan Buckhout‐White, John D. Cressler and Ellen R. Goldman. Their work appears in journals such as IEEE Transactions on Nuclear Science, ECS Journal of Solid State Science and Technology, The Journal of Physical Chemistry A, Applied Physics Letters and The Journal of Chemical Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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