Fabrizio Roccaforte

9.9k total citations · 1 hit paper
345 papers, 7.9k citations indexed

About

Fabrizio Roccaforte is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Fabrizio Roccaforte has authored 345 papers receiving a total of 7.9k indexed citations (citations by other indexed papers that have themselves been cited), including 275 papers in Electrical and Electronic Engineering, 167 papers in Atomic and Molecular Physics, and Optics and 97 papers in Materials Chemistry. Recurrent topics in Fabrizio Roccaforte's work include Semiconductor materials and devices (189 papers), Silicon Carbide Semiconductor Technologies (176 papers) and Semiconductor materials and interfaces (152 papers). Fabrizio Roccaforte is often cited by papers focused on Semiconductor materials and devices (189 papers), Silicon Carbide Semiconductor Technologies (176 papers) and Semiconductor materials and interfaces (152 papers). Fabrizio Roccaforte collaborates with scholars based in Italy, Switzerland and France. Fabrizio Roccaforte's co-authors include Filippo Giannazzo, Giuseppe Greco, V. Raineri, Patrick Fiorenza, Ferdinando Iucolano, Raffaella Lo Nigro, Francesco La Via, Corrado Bongiorno, Salvatore Di Franco and Mario Saggio and has published in prestigious journals such as SHILAP Revista de lepidopterología, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

Fabrizio Roccaforte

330 papers receiving 7.7k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

2017 426 citations Fabrizio Roccaforte, Patrick Fiorenza et al. profile →

Peers

Countries citing papers authored by Fabrizio Roccaforte

Since Specialization

Citations

This map shows the geographic impact of Fabrizio Roccaforte's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fabrizio Roccaforte with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fabrizio Roccaforte more than expected).

Fields of papers citing papers by Fabrizio Roccaforte

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fabrizio Roccaforte. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fabrizio Roccaforte. The network helps show where Fabrizio Roccaforte may publish in the future.

Co-authorship network of co-authors of Fabrizio Roccaforte

This figure shows the co-authorship network connecting the top 25 collaborators of Fabrizio Roccaforte. A scholar is included among the top collaborators of Fabrizio Roccaforte based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fabrizio Roccaforte. Fabrizio Roccaforte is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities 2025 ·Scientific Reports ·(unknown), G. Greco, S. Mirabella, F. Iucolano, Fabrizio Roccaforte	0
2	Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures 2024 ·Applied Surface Science ·(unknown), Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, (unknown), S. Mirabella, Ferdinando Iucolano, Fabrizio Roccaforte	7
3	Silicon Carbide materials and devices: power electronics and innovative applications 2024 ·Materials Science in Semiconductor Processing ·Fabrizio Roccaforte, Daniel Alquier, Tsunenobu Kimoto, Anant Agarwal	4
4	Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy 2024 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Patrick Fiorenza, (unknown), (unknown), (unknown), (unknown), A. Guarnera, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte	1
5	Interface Properties of MoS2 van der Waals Heterojunctions with GaN 2024 ·Nanomaterials ·Salvatore Ethan Panasci, Ioannis Deretzis, Emanuela Schilirò, Antonino La Magna, Fabrizio Roccaforte, Antal A. Koós, Miklós Németh, B. Pécz, M. Cannas, S. Agnello, Filippo Giannazzo	10
6	Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs 2024 ·IEEE Electron Device Letters ·Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Marilena Vivona, (unknown), F. Iucolano, Fabrizio Roccaforte	3
7	Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire 2024 ·Applied Physics Letters ·Salvatore Ethan Panasci, Emanuela Schilirò, Antal A. Koós, Fabrizio Roccaforte, M. Cannas, S. Agnello, B. Pécz, Filippo Giannazzo	5
8	Schottky contacts on sulfurized silicon carbide (4H-SiC) surface 2024 ·Applied Physics Letters ·Fabrizio Roccaforte, Marilena Vivona, Salvatore Ethan Panasci, Giuseppe Greco, Patrick Fiorenza, Attila Sulyok, Antal A. Koós, B. Pécz, Filippo Giannazzo	4
9	Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation 2023 ·Materials Science in Semiconductor Processing ·Antonino Scandurra, (unknown), G. Franzò, Giuseppe Greco, Fabrizio Roccaforte, Maria Eloisa Castagna, (unknown), Andrea Severino, Ferdinando Iucolano, E. Bruno, S. Mirabella	3
10	Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps 2023 ·Materials Science in Semiconductor Processing ·Patrick Fiorenza, (unknown), (unknown), (unknown), (unknown), Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte	3
11	Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults 2023 ·Applied Physics Letters ·Marilena Vivona, Patrick Fiorenza, Viviana Scuderi, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte	7
12	Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition 2023 ·Nanomaterials ·M. Španková, Š. Chromík, Edmund Dobročka, (unknown), (unknown), M. Gregor, B. Pécz, Antal A. Koós, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Y. Cordier, Éric Frayssinet, Filippo Giannazzo	6
13	Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices 2023 ·Materials ·Emanuela Schilirò, Patrick Fiorenza, Raffaella Lo Nigro, (unknown), Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte	4
14	Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing 2022 ·Journal of Applied Physics ·Patrick Fiorenza, Luca Maiolo, G. Fortunato, Marcin Zieliński, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte	4
15	Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology 2021 ·Materials ·Fan Li, Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Francesco La Via, Amador Pérez‐Tomás, Jonathan Evans, Craig A. Fisher, (unknown), Philip Mawby, Michael R. Jennings	29
16	Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC 2020 ·Applied Physics Reviews ·Giuseppe Fisicaro, Corrado Bongiorno, Ioannis Deretzis, Filippo Giannazzo, Francesco La Via, Fabrizio Roccaforte, Marcin Zieliński, Massimo Zimbone, Antonino La Magna	33
17	Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon 2019 ·Materials Science in Semiconductor Processing ·(unknown), Giuseppe Greco, Raffaella Lo Nigro, Corrado Bongiorno, Filippo Giannazzo, Marcin Zieliński, Francesco La Via, Fabrizio Roccaforte	14
18	Effect of air on oxygen p‐doped graphene on SiO₂ 2016 ·physica status solidi (a) ·Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, G. Fisichella, Antonino La Magna, Fabrizio Roccaforte, M. Cannas, F. M. Gelardi, S. Agnello	25
19	Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition 2016 ·Journal of Applied Physics ·(unknown), Marilena Vivona, (unknown), (unknown), (unknown), Svetlana Beljakowa, Heiko B. Weber, Filippo Giannazzo, Hervé Peyre, Véronique Soulière, Thierry Chassagne, Marcin Zieliński, Sandrine Juillaguet, Gabriel Ferro, Fabrizio Roccaforte, M. Krieger	7
20	Ion beam erosion of graphite surfaces studied by STM: Ripples, self-affine roughening and near-surface damage accumulation 2000 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·S. Habenicht, K.P. Lieb, W. Bolse, U. Geyer, Fabrizio Roccaforte, Carsten Ronning	20

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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