Fritz J. Kub

2.5k total citations
112 papers, 2.1k citations indexed

About

Fritz J. Kub is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Fritz J. Kub has authored 112 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Electrical and Electronic Engineering, 34 papers in Condensed Matter Physics and 29 papers in Materials Chemistry. Recurrent topics in Fritz J. Kub's work include Semiconductor materials and devices (44 papers), Silicon Carbide Semiconductor Technologies (36 papers) and GaN-based semiconductor devices and materials (33 papers). Fritz J. Kub is often cited by papers focused on Semiconductor materials and devices (44 papers), Silicon Carbide Semiconductor Technologies (36 papers) and GaN-based semiconductor devices and materials (33 papers). Fritz J. Kub collaborates with scholars based in United States, United Kingdom and Spain. Fritz J. Kub's co-authors include Karl D. Hobart, Marko J. Tadjer, Charles R. Eddy, Travis J. Anderson, Jennifer K. Hite, Andrew D. Koehler, Michael A. Mastro, Virginia D. Wheeler, Joshua D. Caldwell and Boris N. Feigelson and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Fritz J. Kub

106 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Fritz J. Kub United States 24 1.2k 1.0k 647 534 326 112 2.1k
Fengwen Mu Japan 24 971 0.8× 944 0.9× 520 0.8× 302 0.6× 238 0.7× 77 1.7k
Soumendra N. Basu United States 29 939 0.8× 1.9k 1.9× 483 0.7× 472 0.9× 307 0.9× 132 2.7k
Rajiv O. Dusane India 25 1.2k 1.0× 976 1.0× 558 0.9× 160 0.3× 273 0.8× 130 1.9k
Sean Hearne United States 20 1.1k 1.0× 1.0k 1.0× 768 1.2× 715 1.3× 322 1.0× 45 2.3k
Jacob H. Leach United States 26 952 0.8× 1.1k 1.1× 897 1.4× 1.2k 2.2× 201 0.6× 112 2.1k
Hideo Aida Japan 16 471 0.4× 1.1k 1.1× 673 1.0× 265 0.5× 529 1.6× 66 1.5k
C.S. Sandu Switzerland 28 906 0.7× 1.4k 1.3× 363 0.6× 357 0.7× 768 2.4× 83 2.1k
Lisa M. Porter United States 26 1.7k 1.4× 1.3k 1.3× 944 1.5× 180 0.3× 147 0.5× 85 2.7k
Degang Zhao China 27 779 0.6× 1.6k 1.6× 629 1.0× 288 0.5× 197 0.6× 194 2.7k
Sukwon Choi United States 26 789 0.7× 1.3k 1.3× 703 1.1× 799 1.5× 270 0.8× 77 1.9k

Countries citing papers authored by Fritz J. Kub

Since Specialization
Citations

This map shows the geographic impact of Fritz J. Kub's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fritz J. Kub with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fritz J. Kub more than expected).

Fields of papers citing papers by Fritz J. Kub

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fritz J. Kub. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fritz J. Kub. The network helps show where Fritz J. Kub may publish in the future.

Co-authorship network of co-authors of Fritz J. Kub

This figure shows the co-authorship network connecting the top 25 collaborators of Fritz J. Kub. A scholar is included among the top collaborators of Fritz J. Kub based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fritz J. Kub. Fritz J. Kub is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tadjer, Marko J., Travis J. Anderson, Mario G. Ancona, et al.. (2019). GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging. IEEE Electron Device Letters. 40(6). 881–884. 75 indexed citations
2.
Tadjer, Marko J., Fritz J. Kub, Peter E. Raad, et al.. (2018). Electrothermal Evaluation of AlGaN/GaN Membrane High Electron Mobility Transistors by Transient Thermoreflectance. IEEE Journal of the Electron Devices Society. 6. 922–930. 15 indexed citations
3.
Luna, Lunet E., Travis J. Anderson, Andrew D. Koehler, et al.. (2018). Vertical and Lateral GaN Power Devices Enabled by Engineered GaN Substrates. ECS Transactions. 86(9). 3–8. 1 indexed citations
4.
Tadjer, Marko J., Virginia D. Wheeler, Brian P. Downey, et al.. (2017). Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films. Solid-State Electronics. 136. 30–35. 23 indexed citations
5.
Matsumae, Takashi, Andrew D. Koehler, Jordan D. Greenlee, et al.. (2015). Temporary Bonding with Polydimethylglutarimide Based Lift Off Resist as a Layer Transfer Platform. ECS Journal of Solid State Science and Technology. 4(7). P190–P194. 5 indexed citations
6.
Johnson, Scooter D., E. R. Glaser, Fritz J. Kub, & Charles R. Eddy. (2015). Formation of Thick Dense Yttrium Iron Garnet Films Using Aerosol Deposition. Journal of Visualized Experiments. 1 indexed citations
7.
Tadjer, Marko J., Karl D. Hobart, Travis J. Anderson, et al.. (2014). Thermionic-Field Emission Barrier Between Nanocrystalline Diamond and Epitaxial 4H-SiC. IEEE Electron Device Letters. 35(12). 1173–1175. 8 indexed citations
8.
Stahlbush, Robert E., Nadeemullah A. Mahadik, Eugene A. Imhoff, et al.. (2011). Expansion of Shockley Stacking faults in high doped 4H-SiC epilayers. 427. 1–2. 2 indexed citations
9.
Mastro, Michael A., Marko J. Tadjer, Fritz J. Kub, et al.. (2010). Rechargeable zinc oxide / carbon nano-structures. Journal of Ceramic Processing Research. 11(1). 40–43. 1 indexed citations
10.
Mastro, Michael A., et al.. (2009). SYNTHESIS OF MANGANESE OXIDE NANOSTRUCTURES ON CARBON PAPER FOR SUPERCAPACITOR APPLICATIONS. Surface Review and Letters. 16(4). 513–517. 5 indexed citations
11.
Mastro, Michael A., M. E. Twigg, Blake S. Simpkins, et al.. (2008). Group III-nitride radial heterojunction nanowire light emitters. Journal of Ceramic Processing Research. 9(6). 584–587.
12.
Mastro, Michael A., Jaime A. Freitas, O. J. Glembocki, et al.. (2007). Plasmonically enhanced emission from a group-III nitride nanowire emitter. Nanotechnology. 18(26). 265401–265401. 12 indexed citations
13.
Feygelson, Tatyana I., Karl D. Hobart, Mario G. Ancona, Fritz J. Kub, & J. E. Butler. (2006). Fabrication of Silicon-on-Diamond (SOD) Substrates. ECS Meeting Abstracts. MA2005-01(11). 510–510. 2 indexed citations
14.
Colinge, Cindy, et al.. (2006). UV Activation Treatment for Hydrophobic Wafer Bonding. Journal of The Electrochemical Society. 153(7). G613–G613. 14 indexed citations
15.
Colinge, Cindy, et al.. (2006). Fabrication Techniques for Thin-Film Silicon Layer Transfer. ECS Transactions. 3(6). 67–73. 3 indexed citations
16.
Godbey, D. J., et al.. (2003). A Si/sub 0.7/Ge/sub 0.3/ strained layer etch stop for the generation of bond and etch back SOI. 143–144. 1 indexed citations
17.
Kub, Fritz J., et al.. (2003). Double-side IGBT phase leg architecture for reduced recovery current and turn-on loss. 141–144. 5 indexed citations
18.
Hobart, Karl D., et al.. (2002). Very high power S-band SiGe heterojunction bipolar transistors. 42–43. 1 indexed citations
19.
Hobart, Karl D., Fritz J. Kub, M. Fatemi, et al.. (2000). Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides. Journal of Electronic Materials. 29(7). 897–900. 75 indexed citations
20.
Hobart, Karl D., Fritz J. Kub, Glenn G. Jernigan, M. E. Twigg, & Philip E. Thompson. (1998). Fabrication of SOI substrates with ultra-thin Silayers. Electronics Letters. 34(12). 1265–1267. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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