James G. Champlain

653 total citations
44 papers, 524 citations indexed

About

James G. Champlain is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, James G. Champlain has authored 44 papers receiving a total of 524 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 13 papers in Materials Chemistry. Recurrent topics in James G. Champlain's work include Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (18 papers) and Advancements in Semiconductor Devices and Circuit Design (14 papers). James G. Champlain is often cited by papers focused on Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (18 papers) and Advancements in Semiconductor Devices and Circuit Design (14 papers). James G. Champlain collaborates with scholars based in United States, France and Ireland. James G. Champlain's co-authors include J.B. Boos, Laura B. Ruppalt, B. R. Bennett, David A. Deen, Mario G. Ancona, N. A. Papanicolaou, R. Magno, Erin R. Cleveland, S. M. Prokes and Doewon Park and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

James G. Champlain

40 papers receiving 503 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
James G. Champlain United States 15 409 263 226 96 83 44 524
Per‐Erik Hellström Sweden 16 725 1.8× 154 0.6× 204 0.9× 41 0.4× 168 2.0× 104 811
S. Chatraphorn Thailand 12 213 0.5× 150 0.6× 156 0.7× 70 0.7× 43 0.5× 35 361
Lalani K. Werake United States 9 174 0.4× 145 0.6× 236 1.0× 25 0.3× 100 1.2× 11 388
Dinusha Herath Mudiyanselage United States 13 202 0.5× 261 1.0× 125 0.6× 138 1.4× 54 0.7× 34 476
Seongjae Lee South Korea 11 413 1.0× 198 0.8× 297 1.3× 43 0.4× 89 1.1× 60 562
F. Sacconi Italy 13 363 0.9× 226 0.9× 281 1.2× 269 2.8× 109 1.3× 41 577
R. E. Sherriff United States 10 197 0.5× 205 0.8× 112 0.5× 45 0.5× 41 0.5× 18 348
Y. Nabetani Japan 16 639 1.6× 416 1.6× 444 2.0× 68 0.7× 61 0.7× 35 771
Nacer Debbar Saudi Arabia 11 403 1.0× 113 0.4× 344 1.5× 38 0.4× 41 0.5× 33 486

Countries citing papers authored by James G. Champlain

Since Specialization
Citations

This map shows the geographic impact of James G. Champlain's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by James G. Champlain with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites James G. Champlain more than expected).

Fields of papers citing papers by James G. Champlain

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by James G. Champlain. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by James G. Champlain. The network helps show where James G. Champlain may publish in the future.

Co-authorship network of co-authors of James G. Champlain

This figure shows the co-authorship network connecting the top 25 collaborators of James G. Champlain. A scholar is included among the top collaborators of James G. Champlain based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with James G. Champlain. James G. Champlain is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Donovan, Brian, Ronald J. Warzoha, E. Getto, et al.. (2024). Propagon boundary scattering relaxed via crystalline host on multiphase germanium telluride. Applied Physics Letters. 124(17). 1 indexed citations
2.
Champlain, James G., et al.. (2020). First-principles study and experimental characterization of metal incorporation in germanium telluride. Journal of Applied Physics. 128(22). 5 indexed citations
3.
Growden, Tyler A., David F. Storm, E. R. Brown, et al.. (2020). Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2. AIP Advances. 10(5). 7 indexed citations
4.
Growden, Tyler A., David F. Storm, E. R. Brown, et al.. (2020). Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes. Applied Physics Letters. 116(11). 27 indexed citations
5.
Downey, Brian P., Andy Xie, Shawn Mack, et al.. (2020). Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design. 29. 1–2. 4 indexed citations
6.
Warzoha, Ronald J., et al.. (2020). Measurements of Thermal Boundary Conductance Across α-GeTe/c-GeTe Interfaces. 128. 1001–1005. 2 indexed citations
7.
Khachatrian, Ani, Nicolas J.-H. Roche, Laura B. Ruppalt, et al.. (2017). Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in ${\text {Al}}_{x} {\text {Ga}}_{1-x}$ N/GaN HEMTs. IEEE Transactions on Nuclear Science. 65(1). 369–375. 5 indexed citations
8.
Kong, Byoung Don, James G. Champlain, & J.B. Boos. (2017). Hot electron inelastic scattering and transmission across graphene surfaces. Journal of Applied Physics. 121(23). 2 indexed citations
9.
Ruppalt, Laura B., Erin R. Cleveland, James G. Champlain, et al.. (2015). Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 33(4). 5 indexed citations
10.
Warner, Jeffrey H., Dale McMorrow, S. Büchner, et al.. (2014). Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors. IEEE Transactions on Nuclear Science. 61(4). 1510–1515. 4 indexed citations
11.
Cress, Cory D., James G. Champlain, Ivan Sanchez Esqueda, et al.. (2012). Total Ionizing Dose Induced Charge Carrier Scattering in Graphene Devices. IEEE Transactions on Nuclear Science. 59(6). 3045–3053. 33 indexed citations
12.
Champlain, James G., R. Magno, Doewon Park, H. S. Newman, & J.B. Boos. (2011). High-frequency, 6.2ÅpN heterojunction diodes. Solid-State Electronics. 67(1). 105–108.
13.
Deen, David A. & James G. Champlain. (2011). High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised. Applied Physics Letters. 99(5). 21 indexed citations
14.
Champlain, James G.. (2011). On the use of the term “ambipolar”. Applied Physics Letters. 99(12). 19 indexed citations
15.
Magno, R., James G. Champlain, H. S. Newman, et al.. (2008). Antimonide-based diodes for terahertz mixers. Applied Physics Letters. 92(24). 7 indexed citations
16.
Champlain, James G., R. Magno, Mario G. Ancona, H. S. Newman, & J.B. Boos. (2008). InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material. Solid-State Electronics. 52(11). 1829–1832. 1 indexed citations
17.
Boos, J.B., B. R. Bennett, N. A. Papanicolaou, et al.. (2008). Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications. IEICE Transactions on Electronics. E91-C(7). 1050–1057. 26 indexed citations
18.
Champlain, James G., R. Magno, Doewon Park, H. S. Newman, & J.B. Boos. (2007). 6.2 Å Sb-based pN diodes for high frequency applications. 855–856. 2 indexed citations
19.
Champlain, James G., R. Magno, & J.B. Boos. (2007). Low resistance, unannealed ohmic contacts to n -type InAs 0.66 Sb 0.34. Electronics Letters. 43(23). 1315–1317. 6 indexed citations
20.
Mishra, Umesh K., P. Parikh, P. Chavarkar, et al.. (2002). Oxide based compound semiconductor electronics. 31. 545–548. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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