F. Bertram

6.2k total citations · 1 hit paper
183 papers, 5.0k citations indexed

About

F. Bertram is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, F. Bertram has authored 183 papers receiving a total of 5.0k indexed citations (citations by other indexed papers that have themselves been cited), including 137 papers in Condensed Matter Physics, 100 papers in Materials Chemistry and 80 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in F. Bertram's work include GaN-based semiconductor devices and materials (137 papers), ZnO doping and properties (81 papers) and Ga2O3 and related materials (77 papers). F. Bertram is often cited by papers focused on GaN-based semiconductor devices and materials (137 papers), ZnO doping and properties (81 papers) and Ga2O3 and related materials (77 papers). F. Bertram collaborates with scholars based in Germany, United States and Japan. F. Bertram's co-authors include J. Christen, A. Hoffmann, Daniel F. Förster, J. Christen, Bertrand Meyer, Martin Straßburg, U. Haboeck, D.M. Hofmann, W. Kriegseis and A. V. Rodina and has published in prestigious journals such as Nano Letters, ACS Nano and Applied Physics Letters.

In The Last Decade

F. Bertram

180 papers receiving 4.9k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Bound exciton and donor–acceptor pair recombinations in ZnO

2004 1.4k citations Daniel F. Förster, F. Bertram et al. physica status solidi (b) profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
F. Bertram Germany	33	3.5k	2.3k	2.2k	2.0k	964	183	5.0k
V. Yu. Davydov Russia	32	3.2k 0.9×	4.0k 1.8×	2.3k 1.1×	1.7k 0.8×	1.7k 1.7×	263	5.8k
V. Cimalla Germany	39	2.8k 0.8×	1.9k 0.9×	1.3k 0.6×	3.3k 1.7×	1.1k 1.1×	263	5.5k
P. Vennéguès France	38	2.1k 0.6×	3.3k 1.4×	1.9k 0.9×	1.5k 0.7×	1.0k 1.0×	172	4.4k
N. A. El-Masry United States	32	2.4k 0.7×	2.1k 0.9×	1.5k 0.7×	1.7k 0.8×	1.5k 1.5×	151	4.2k
Akio Yamamoto Japan	30	1.8k 0.5×	2.7k 1.2×	1.5k 0.7×	1.8k 0.9×	1.8k 1.8×	190	4.3k
S. J. Chua Singapore	32	2.3k 0.6×	1.3k 0.6×	1.2k 0.5×	2.1k 1.0×	903 0.9×	174	3.7k
J. Bläsing Germany	39	3.5k 1.0×	3.5k 1.6×	2.2k 1.0×	2.8k 1.4×	1.2k 1.2×	190	6.2k
Travis J. Anderson United States	37	2.4k 0.7×	2.4k 1.0×	1.4k 0.6×	3.2k 1.6×	651 0.7×	260	4.7k
Ramón Collazo United States	43	2.5k 0.7×	5.1k 2.2×	3.0k 1.4×	2.7k 1.4×	1.1k 1.1×	272	6.5k
Masatomo Sumiya Japan	33	4.0k 1.2×	2.5k 1.1×	2.9k 1.3×	2.7k 1.4×	610 0.6×	149	5.7k

Countries citing papers authored by F. Bertram

Since Specialization

Citations

This map shows the geographic impact of F. Bertram's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Bertram with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Bertram more than expected).

Fields of papers citing papers by F. Bertram

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Bertram. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Bertram. The network helps show where F. Bertram may publish in the future.

Co-authorship network of co-authors of F. Bertram

This figure shows the co-authorship network connecting the top 25 collaborators of F. Bertram. A scholar is included among the top collaborators of F. Bertram based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Bertram. F. Bertram is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Albert, Steven M., A. Bengoechea‐Encabo, Gordon Schmidt, et al.. (2024). Fabrication of non-polar AlN films by ICP etching and overgrowth by MBE. Journal of Crystal Growth. 645. 127843–127843. 1 indexed citations

Schürmann, Helmut, F. Bertram, Gordon Schmidt, et al.. (2024). GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources. physica status solidi (RRL) - Rapid Research Letters. 18(11).

Schürmann, Helmut, Gordon Schmidt, F. Bertram, et al.. (2021). Desorption induced formation of low-density GaN quantum dots: nanoscale correlation of structural and optical properties. Journal of Physics D Applied Physics. 55(14). 145102–145102. 1 indexed citations

Müller, Marcus, F. Bertram, Peter Veit, et al.. (2019). Nanoscale mapping of carrier recombination in GaAs/AlGaAs core-multishell nanowires by cathodoluminescence imaging in a scanning transmission electron microscope. Applied Physics Letters. 115(24). 4 indexed citations

Gačević, Ž., Nenad Vukmirović, Almudena Torres‐Pardo, et al.. (2016). Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires. Physical review. B.. 93(12). 15 indexed citations

Monavarian, Morteza, N. Izyumskaya, Marcus Müller, et al.. (2016). Improvement of optical quality of semipolar (112¯2) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth. Journal of Applied Physics. 119(14). 12 indexed citations

Veit, Peter, et al.. (2015). STEM‐CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi‐quantum wells. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 12(4-5). 469–472. 19 indexed citations

Bertram, F., Fan Zhang, Jonas Evertsson, et al.. (2014). In situ anodization of aluminum surfaces studied by x-ray reflectivity and electrochemical impedance spectroscopy. Journal of Applied Physics. 116(3). 19 indexed citations

Albert, Steven M., A. Bengoechea‐Encabo, M. A. Sánchez-Garcı́a, et al.. (2014). Advances in MBE Selective Area Growth of III-Nitride Nanostructures: From NanoLEDs to Pseudo Substrates. International Journal of High Speed Electronics and Systems. 23(03n04). 1450020–1450020. 2 indexed citations

10.

Veit, Peter, Mathias Müller, Gordon Schmidt, et al.. (2012). Growth and stacking fault reduction in semi‐polar GaN films on planar Si(112) and Si(113). Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 507–510. 13 indexed citations

11.

Wang, Jiaxing, Lai Wang, Lei Wang, et al.. (2012). An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes. Journal of Applied Physics. 112(2). 45 indexed citations

12.

Christen, J., F. Bertram, Gordon Schmidt, et al.. (2012). Cathodoluminescence directly performed in a transmission electron microscope: nanoscale correlation of structural and optical properties. Microscopy and Microanalysis. 18(S2). 1834–1835. 1 indexed citations

13.

Mofor, A. Che, A. Bakin, Abdelhamid El‐Shaer, et al.. (2007). Vapour transport growth of ZnO nanorods. Applied Physics A. 88(1). 17–20. 14 indexed citations

14.

Dadgar, A., A. Krost, J. Christen, et al.. (2006). MOVPE growth of high-quality AlN. Journal of Crystal Growth. 297(2). 306–310. 73 indexed citations

15.

Bertram, F., Daniel F. Förster, J. Christen, et al.. (2006). Direct imaging of phase separation in ZnCdO layers. Applied Physics Letters. 88(6). 51 indexed citations

16.

Krtschil, A., J. Bläsing, A. Dadgar, et al.. (2002). Metalorganic chemical vapor phase deposition of ZnO with different O-precursors. Journal of Crystal Growth. 248. 14–19. 44 indexed citations

17.

Hiramatsu, Kazumasa, Atsushi Motogaito, Hideto Miyake, et al.. (2000). Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask. IEICE Transactions on Electronics. 83(4). 620–626. 3 indexed citations

18.

Kaschner, A., A. Hoffmann, C. Thomsen, et al.. (1999). Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN. Applied Physics Letters. 74(22). 3320–3322. 50 indexed citations

19.

Holst, J., A. Hoffmann, I. Broser, et al.. (1999). Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN. physica status solidi (b). 216(1). 471–476. 8 indexed citations

20.

Hoffmann, A., H. Siegle, A. Kaschner, et al.. (1999). Stress analysis of selective epitaxial growth of GaN. Applied Physics Letters. 74(21). 3122–3124. 40 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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