Daniel Francis

1.7k total citations
45 papers, 1.4k citations indexed

About

Daniel Francis is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Daniel Francis has authored 45 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 33 papers in Condensed Matter Physics and 22 papers in Materials Chemistry. Recurrent topics in Daniel Francis's work include GaN-based semiconductor devices and materials (33 papers), Silicon Carbide Semiconductor Technologies (23 papers) and Thermal properties of materials (17 papers). Daniel Francis is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), Silicon Carbide Semiconductor Technologies (23 papers) and Thermal properties of materials (17 papers). Daniel Francis collaborates with scholars based in United States, United Kingdom and Croatia. Daniel Francis's co-authors include Firooz Faili, Felix Ejeckam, Martin Kuball, James W. Pomeroy, Daniel J. Twitchen, D.I. Babic, Huarui Sun, Jungwan Cho, Kenneth E. Goodson and Roland B. Simon and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scripta Materialia.

In The Last Decade

Daniel Francis

43 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Daniel Francis United States	21	971	936	910	400	145	45	1.4k
Firooz Faili United States	21	884 0.9×	833 0.9×	880 1.0×	403 1.0×	122 0.8×	49	1.3k
Felix Ejeckam United States	18	882 0.9×	622 0.7×	523 0.6×	264 0.7×	73 0.5×	43	1.2k
J. Anaya United Kingdom	14	372 0.4×	280 0.3×	586 0.6×	213 0.5×	71 0.5×	35	770
D. I. Florescu United States	13	420 0.4×	686 0.7×	629 0.7×	126 0.3×	175 1.2×	26	962
Urban Forsberg Sweden	23	852 0.9×	862 0.9×	564 0.6×	208 0.5×	517 3.6×	79	1.5k
R. Lossy Germany	17	593 0.6×	540 0.6×	407 0.4×	253 0.6×	246 1.7×	50	968
M. Kuball United Kingdom	19	430 0.4×	695 0.7×	496 0.5×	196 0.5×	244 1.7×	45	922
M. Alomari Germany	14	547 0.6×	627 0.7×	333 0.4×	162 0.4×	243 1.7×	44	867
J. Ramer United States	17	500 0.5×	933 1.0×	525 0.6×	237 0.6×	358 2.5×	38	1.1k
D.C. Dumka United States	15	689 0.7×	517 0.6×	274 0.3×	85 0.2×	90 0.6×	39	834

Countries citing papers authored by Daniel Francis

Since Specialization

Citations

This map shows the geographic impact of Daniel Francis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel Francis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel Francis more than expected).

Fields of papers citing papers by Daniel Francis

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel Francis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel Francis. The network helps show where Daniel Francis may publish in the future.

Co-authorship network of co-authors of Daniel Francis

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel Francis. A scholar is included among the top collaborators of Daniel Francis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel Francis. Daniel Francis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Cui, Yue, Marko J. Tadjer, Travis J. Anderson, et al.. (2020). Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach. Semiconductor Science and Technology. 36(1). 14008–14008. 10 indexed citations

Tadjer, Marko J., Travis J. Anderson, Mario G. Ancona, et al.. (2019). GaN-On-Diamond HEMT Technology With T_AVG = 176°C at P_DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging. IEEE Electron Device Letters. 40(6). 881–884. 75 indexed citations

Anderson, Jonathan, E. L. Piner, Firooz Faili, et al.. (2017). Ultraviolet and visible micro‐Raman and micro‐photoluminescence spectroscopy investigations of stress on a 75‐mm GaN‐on‐diamond wafer. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 14(8). 4 indexed citations

Nazari, Mohammad, Jonathan Anderson, A. Savage, et al.. (2016). Near-ultraviolet micro-Raman study of diamond grown on GaN. Applied Physics Letters. 108(3). 14 indexed citations

Sun, Huarui, Dong Liu, James W. Pomeroy, et al.. (2016). GaN-on-diamond: Robust mechanical and thermal properties. Explore Bristol Research. 201–203. 3 indexed citations

Alvarez, Brian, et al.. (2016). Elimination of Leakage in GaN-on-Diamond. 3. 1–4. 4 indexed citations

Sun, Huarui, James W. Pomeroy, Roland B. Simon, et al.. (2015). Rapid Characterization of GaN-on-diamond Interfacial Thermal Resistance Using Contactless Transient Thermoreflectance. Bristol Research (University of Bristol). 151–153. 4 indexed citations

Cho, Jungwan, Daniel Francis, P.C. Chao, Mehdi Asheghi, & Kenneth E. Goodson. (2015). Cross-Plane Phonon Conduction in Polycrystalline Silicon Films. Journal of Heat Transfer. 137(7). 9 indexed citations

Ejeckam, Felix, et al.. (2014). Diamond for enhanced GaN device performance. 1206–1209. 9 indexed citations

10.

Altman, David, Samuel Kim, Samuel Graham, et al.. (2014). Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates. 1199–1205. 38 indexed citations

11.

Cho, Jungwan, Yoonjin Won, Daniel Francis, Mehdi Asheghi, & Kenneth E. Goodson. (2014). Thermal Interface Resistance Measurements for GaN-on-Diamond Composite Substrates. 1–4. 20 indexed citations

12.

Dumka, D.C., Tso-Min Chou, Firooz Faili, Daniel Francis, & Felix Ejeckam. (2013). AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz. Electronics Letters. 49(20). 1298–1299. 62 indexed citations

13.

Babic, D.I., Quentin Diduck, J. Smart, et al.. (2012). Measurement of thermal boundary resistance in AlGaN/GaN HEMTs using Liquid Crystal Thermography. International Convention on Information and Communication Technology, Electronics and Microelectronics. 48–53. 2 indexed citations

14.

Faili, Firooz, et al.. (2011). Development of III-Nitride HEMTs on CVD Diamond Substrates. 1 indexed citations

15.

Babic, D.I., Quentin Diduck, Anja Schreiber, et al.. (2010). GaN-on-diamond field-effect transistors: from wafers to amplifier modules. 60–66. 14 indexed citations

16.

Diduck, Quentin, L.F. Eastman, Daniel Francis, et al.. (2009). Frequency performance enhancement of AlGaN/GaN HEMTs on diamond. Electronics Letters. 45(14). 758–759. 28 indexed citations

17.

Eastman, L.F., J. Wasserbauer, Firooz Faili, et al.. (2007). Comparison of GaN HEMTs on Diamond and SiC Substrates. IEEE Electron Device Letters. 28(11). 948–950. 125 indexed citations

18.

Francis, Daniel, J. Wasserbauer, D.I. Babic, Firooz Faili, & Felix Ejeckam. (2007). Diamond cools high-power transistors. 25. 4 indexed citations

19.

Francis, Daniel, J. Wasserbauer, Firooz Faili, et al.. (2007). GaN-HEMT Epilayers on Diamond Substrates: Recent Progress. 21 indexed citations

20.

Vail, E.C., et al.. (1993). Buried heterostructure 0.98 μm InGaAs/InGaAsP/InGaP lasers. Applied Physics Letters. 63(16). 2183–2185. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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