Christopher Hatem

604 total citations
33 papers, 503 citations indexed

About

Christopher Hatem is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Christopher Hatem has authored 33 papers receiving a total of 503 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 4 papers in Biomedical Engineering. Recurrent topics in Christopher Hatem's work include Semiconductor materials and devices (24 papers), Silicon and Solar Cell Technologies (13 papers) and Semiconductor materials and interfaces (12 papers). Christopher Hatem is often cited by papers focused on Semiconductor materials and devices (24 papers), Silicon and Solar Cell Technologies (13 papers) and Semiconductor materials and interfaces (12 papers). Christopher Hatem collaborates with scholars based in United States, Singapore and India. Christopher Hatem's co-authors include K. S. Jones, Tomás Palacios, Daniel Piedra, Min Sun, M. Azize, R. Mickevičius, Hiu Yung Wong, Nelson Braga, Yuxuan Lin and Lili Yu and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Christopher Hatem

32 papers receiving 489 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Christopher Hatem United States 11 389 260 157 153 124 33 503
Toshiya Tabuchi Japan 13 335 0.9× 401 1.5× 245 1.6× 85 0.6× 164 1.3× 35 498
J. Škriniarová Slovakia 10 224 0.6× 124 0.5× 69 0.4× 110 0.7× 117 0.9× 59 347
Quentin Diduck United States 9 412 1.1× 328 1.3× 126 0.8× 114 0.7× 100 0.8× 31 490
Chih-Wei Yang Taiwan 12 409 1.1× 227 0.9× 117 0.7× 66 0.4× 64 0.5× 53 461
Wei-Hung Kuo Taiwan 10 253 0.7× 239 0.9× 135 0.9× 72 0.5× 162 1.3× 36 386
Ei Ei Nyein United States 9 210 0.5× 201 0.8× 156 1.0× 102 0.7× 314 2.5× 23 425
L. I. Pomortseva Russia 8 283 0.7× 203 0.8× 72 0.5× 159 1.0× 90 0.7× 11 393
Erin C. H. Kyle United States 14 428 1.1× 576 2.2× 364 2.3× 100 0.7× 180 1.5× 17 677
Osamu Ishiguro Japan 9 407 1.0× 479 1.8× 232 1.5× 83 0.5× 93 0.8× 12 513
S.J. Cai United States 10 298 0.8× 334 1.3× 152 1.0× 106 0.7× 85 0.7× 13 417

Countries citing papers authored by Christopher Hatem

Since Specialization
Citations

This map shows the geographic impact of Christopher Hatem's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Christopher Hatem with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Christopher Hatem more than expected).

Fields of papers citing papers by Christopher Hatem

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Christopher Hatem. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Christopher Hatem. The network helps show where Christopher Hatem may publish in the future.

Co-authorship network of co-authors of Christopher Hatem

This figure shows the co-authorship network connecting the top 25 collaborators of Christopher Hatem. A scholar is included among the top collaborators of Christopher Hatem based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Christopher Hatem. Christopher Hatem is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sapkota, Keshab, et al.. (2020). Wet-chemical etching of FIB lift-out TEM lamellae for damage-free analysis of 3-D nanostructures. Ultramicroscopy. 216. 113049–113049. 9 indexed citations
2.
Hu, Xunxiang, et al.. (2018). Defect evolution in ultralow energy, high dose helium implants of silicon performed at elevated temperatures. Journal of Applied Physics. 124(16). 1 indexed citations
3.
Zhang, Yuhao, Zhihong Liu, Marko J. Tadjer, et al.. (2017). Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation. IEEE Electron Device Letters. 38(8). 1097–1100. 148 indexed citations
4.
Xin, Yan, et al.. (2017). Lateral Ge Diffusion During Oxidation of Si/SiGe Fins. Nano Letters. 17(4). 2159–2164. 7 indexed citations
5.
Zhao, Xueying, Daniele Chiappe, Surajit Sutar, et al.. (2017). Low Energy Phosphorus Plasma Implantation for Isolation of MoS 2 Devices. ECS Transactions. 77(8). 3–8. 1 indexed citations
6.
Martin, Thomas P., et al.. (2017). Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon. Journal of Materials Science. 52(17). 10387–10392. 1 indexed citations
7.
Hatem, Christopher, et al.. (2016). Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As. ECS Journal of Solid State Science and Technology. 5(5). Q125–Q131. 12 indexed citations
8.
Zhao, Xueying, et al.. (2016). The Effect of Low Energy Ion Implantation on MoS2. ECS Journal of Solid State Science and Technology. 5(11). Q3050–Q3053. 24 indexed citations
9.
Hatem, Christopher, Xinyu Bao, Ming Zhang, et al.. (2015). Improvement of Si doping of In<inf>0.53</inf>Ga<inf>0.47</inf>As fin by heated implant. 90. 1–2. 2 indexed citations
10.
Sun, Min, Hiu Yung Wong, Yuxuan Lin, et al.. (2015). Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes. IEEE Transactions on Electron Devices. 62(7). 2155–2161. 138 indexed citations
11.
Hatem, Christopher, et al.. (2015). Fermi-Level Effects on Extended Defect Evolution in Si+and P+Implanted In0.53Ga0.47As. ECS Journal of Solid State Science and Technology. 5(4). P3073–P3077. 6 indexed citations
12.
Law, Mark E., et al.. (2014). Concentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As. Applied Physics Letters. 105(4). 10 indexed citations
13.
Hatem, Christopher, et al.. (2014). Electrical activation of ion implanted Si in amorphous and crystalline In0.53Ga0.47As. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 337. 7–10. 12 indexed citations
14.
Misra, Abhishek, et al.. (2014). Enhanced Ge n+/p Junction Performance Using Cryogenic Phosphorus Implantation. IEEE Transactions on Electron Devices. 62(1). 69–74. 13 indexed citations
15.
D’Costa, Vijay Richard, Lanxiang Wang, Wei Wang, et al.. (2014). Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study. Applied Physics Letters. 105(12). 11 indexed citations
16.
Hatem, Christopher, et al.. (2014). High Performance 400 °C p+/n Ge Junctions Using Cryogenic Boron Implantation. IEEE Electron Device Letters. 35(7). 717–719. 24 indexed citations
17.
Mittal, S., Christos Thomidis, Christopher Hatem, et al.. (2014). Cryogenic implantation for source/drain junctions in Ge p-channel (Fin)FETs. 101. 235–236.
18.
Wang, Lanxiang, Bin Liu, Xiao Gong, et al.. (2014). Self-crystallization and reduced contact resistivity by hot phosphorus ion implant in germanium-tin alloy. 109. 1–2. 1 indexed citations
19.
Gelpey, Jeffrey C., et al.. (2008). Ultra-shallow junction formation using flash annealing and advanced doping techniques. 82–86. 9 indexed citations
20.
Hatem, Christopher, et al.. (2008). Approaches to USJ Formation Beyond Molecular Implantation. AIP conference proceedings. 399–402. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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