Aman Haque

9.3k total citations · 1 hit paper
234 papers, 7.3k citations indexed

About

Aman Haque is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Aman Haque has authored 234 papers receiving a total of 7.3k indexed citations (citations by other indexed papers that have themselves been cited), including 121 papers in Materials Chemistry, 92 papers in Electrical and Electronic Engineering and 58 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Aman Haque's work include Semiconductor materials and devices (40 papers), Ga2O3 and related materials (38 papers) and Metal and Thin Film Mechanics (34 papers). Aman Haque is often cited by papers focused on Semiconductor materials and devices (40 papers), Ga2O3 and related materials (38 papers) and Metal and Thin Film Mechanics (34 papers). Aman Haque collaborates with scholars based in United States, Bangladesh and South Korea. Aman Haque's co-authors include M. Taher A. Saif, Amit V. Desai, Qing Wang, Guangzu Zhang, Matthew R. Gadinski, Qi Li, Shihai Zhang, Haoyu U. Li, Lei Chen and Thomas N. Jackson and has published in prestigious journals such as Nature, Proceedings of the National Academy of Sciences and Advanced Materials.

In The Last Decade

Aman Haque

221 papers receiving 7.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Flexible high-temperature dielectric materials from polymer nanocomposites

2015 1.8k citations Aman Haque et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Aman Haque United States	40	4.5k	2.9k	1.8k	1.3k	1.2k	234	7.3k
Te‐Hua Fang Taiwan	49	5.7k 1.3×	2.9k 1.0×	2.9k 1.6×	896 0.7×	2.6k 2.2×	511	9.4k
Pradeep Sharma United States	47	6.3k 1.4×	2.6k 0.9×	1.3k 0.7×	863 0.7×	3.1k 2.6×	160	9.3k
Christopher M. Stafford United States	49	3.0k 0.7×	4.9k 1.7×	2.0k 1.1×	1.0k 0.8×	925 0.8×	170	10.0k
Lei Jiang China	35	2.3k 0.5×	3.5k 1.2×	2.7k 1.5×	875 0.7×	2.0k 1.7×	178	10.6k
Benjamin D. Hatton Canada	31	2.3k 0.5×	2.5k 0.9×	1.8k 1.0×	562 0.4×	1.6k 1.3×	75	8.9k
Seungbum Hong South Korea	39	4.4k 1.0×	3.1k 1.1×	2.8k 1.6×	1.9k 1.5×	400 0.3×	266	7.4k
Nicolas Vogel Germany	42	3.0k 0.7×	2.6k 0.9×	1.6k 0.9×	1.4k 1.1×	441 0.4×	186	7.4k
Jae‐Hyun Kim South Korea	40	3.3k 0.7×	3.1k 1.1×	2.4k 1.3×	946 0.7×	514 0.4×	142	6.6k
Lianxi Zheng China	48	4.3k 1.0×	2.4k 0.8×	2.1k 1.2×	2.4k 1.9×	404 0.3×	184	7.8k
L. Martinů Canada	49	5.0k 1.1×	1.4k 0.5×	3.9k 2.1×	1.1k 0.9×	3.6k 3.0×	310	9.4k

Countries citing papers authored by Aman Haque

Since Specialization

Citations

This map shows the geographic impact of Aman Haque's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Aman Haque with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Aman Haque more than expected).

Fields of papers citing papers by Aman Haque

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Aman Haque. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Aman Haque. The network helps show where Aman Haque may publish in the future.

Co-authorship network of co-authors of Aman Haque

This figure shows the co-authorship network connecting the top 25 collaborators of Aman Haque. A scholar is included among the top collaborators of Aman Haque based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Aman Haque. Aman Haque is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chu, Rongming, et al.. (2025). Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing. Micromachines. 16(3). 242–242.

Stepanoff, Sergei P., Ani Khachatrian, Aman Haque, et al.. (2025). Enhancing radiation hardness of microelectronics through stress-relief milling. Applied Physics Letters. 126(3).

Waryoba, Daudi, et al.. (2024). Microstructural modification and enhanced mechanical properties in Zr50-Ti50 alloy via low temperature electron wind force annealing. Materials Characterization. 215. 114188–114188. 1 indexed citations

Liu, Gongyuan, et al.. (2024). Low-Temperature Annealing of Nanoscale Defects in Polycrystalline Graphite. SHILAP Revista de lepidopterología. 10(3). 76–76. 1 indexed citations

Chiang, Chao-Ching, et al.. (2024). Dry and wet etching of single-crystal AlN. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(5). 2 indexed citations

Li, Jian-Sian, Xinyi Xia, David C. Hays, et al.. (2024). Determination of band offsets at the interfaces of NiO, SiO2, Al2O3, and ITO with AlN. Journal of Applied Physics. 135(23). 2 indexed citations

Li, Jian-Sian, Chao-Ching Chiang, Sergei P. Stepanoff, et al.. (2024). Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 42(5). 1 indexed citations

Xia, Xinyi, Sergei P. Stepanoff, Aman Haque, et al.. (2023). 60Co γ-irradiation of AlGaN UVC light-emitting diodes. Optical Materials. 142. 114015–114015. 2 indexed citations

Gallagher, James C., Alan G. Jacobs, Karl D. Hobart, et al.. (2023). Improving vertical GaN p–n diode performance with room temperature defect mitigation. Semiconductor Science and Technology. 39(1). 15004–15004. 1 indexed citations

10.

Kim, Jihyun, et al.. (2023). Reducing proton radiation vulnerability in AlGaN/GaN high electron mobility transistors with residual strain relief. Journal of Applied Physics. 134(22). 1 indexed citations

11.

Stepanoff, Sergei P., Aman Haque, F. Ren, S. J. Pearton, & Douglas E. Wolfe. (2023). Rapid detection of radiation susceptible regions in electronics. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 41(4). 3 indexed citations

12.

Pearton, S. J., Xinyi Xia, F. Ren, et al.. (2023). Radiation damage in GaN/AlGaN and SiC electronic and photonic devices. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 41(3). 16 indexed citations

13.

Rasel, Md Abu Jafar, Sergei P. Stepanoff, Aman Haque, et al.. (2023). Ultrafast, room temperature rejuvenation of SiC Schottky diodes from forward current-induced degradation. Applied Physics Letters. 122(20). 6 indexed citations

14.

Rasel, Md Abu Jafar, Sergei P. Stepanoff, Aman Haque, et al.. (2022). Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force. ECS Journal of Solid State Science and Technology. 11(7). 75002–75002. 18 indexed citations

15.

Xia, Xinyi, Jian-Sian Li, Ribhu Sharma, et al.. (2022). Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga ₂ O ₃. ECS Journal of Solid State Science and Technology. 11(9). 95001–95001. 35 indexed citations

16.

Xia, Xinyi, Chaker Fares, Aman Haque, et al.. (2022). Band Alignment of Al ₂ O ₃ on α -(Al _x Ga _1-x ) ₂ O ₃. ECS Journal of Solid State Science and Technology. 11(2). 25006–25006. 4 indexed citations

17.

Stepanoff, Sergei P., et al.. (2022). Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 121(23). 4 indexed citations

18.

Rasel, Md Abu Jafar, Brian C. Wyatt, Maxwell Wetherington, Babak Anasori, & Aman Haque. (2021). Low-temperature annealing of 2D Ti3C2Tx MXene films using electron wind force in ambient conditions. Journal of materials research/Pratt's guide to venture capital sources. 36(17). 3398–3406. 6 indexed citations

19.

Fares, Chaker, Zahabul Islam, Aman Haque, et al.. (2019). Effect of Annealing on the Band Alignment of ALD SiO₂ on (Al_xGa_1-x)₂O₃ for x = 0.2 - 0.65. ECS Journal of Solid State Science and Technology. 8(12). P751–P756. 7 indexed citations

20.

Wang, Baoming, et al.. (2015). High temperature and current density induced degradation of multi-layer graphene. Applied Physics Letters. 107(16). 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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