Joseph Spencer

1.3k total citations · 1 hit paper
36 papers, 983 citations indexed

About

Joseph Spencer is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Joseph Spencer has authored 36 papers receiving a total of 983 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electronic, Optical and Magnetic Materials, 25 papers in Materials Chemistry and 13 papers in Electrical and Electronic Engineering. Recurrent topics in Joseph Spencer's work include Ga2O3 and related materials (25 papers), ZnO doping and properties (20 papers) and GaN-based semiconductor devices and materials (11 papers). Joseph Spencer is often cited by papers focused on Ga2O3 and related materials (25 papers), ZnO doping and properties (20 papers) and GaN-based semiconductor devices and materials (11 papers). Joseph Spencer collaborates with scholars based in United States, United Kingdom and Hong Kong. Joseph Spencer's co-authors include Marko J. Tadjer, Yuhao Zhang, Alan G. Jacobs, Xinhua Liang, Alan W. Weimer, Luis F. Hakim, A. Mock, M. Schubert, Yuan Qin and David M. King and has published in prestigious journals such as SHILAP Revista de lepidopterología, ACS Nano and Applied Physics Letters.

In The Last Decade

Joseph Spencer

34 papers receiving 961 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3

2022 230 citations Joseph Spencer, A. Mock et al. Applied Physics Reviews profile →

Peers

Joseph Spencer

EEE

EOMM

RESE

CMP

C.A. Cortés-Escobedo Mexico

L. V. Saraf United States

Su Jae Kim South Korea

Jason Schiemer United Kingdom

В. В. Федотова Belarus

Hiroyuki Shimada Japan

Xianquan Meng China

Charles H. Hervoches Czechia

С. И. Бредихин Russia

Jayanta Mondal India

C.A. Cortés-Escobedo Mexico

Joseph Spencer

711 ×1.1

287 ×0.6

EEE

710 ×1.5

EOMM

164 ×0.7

RESE

153 ×1.3

CMP

Citations per year, relative to Joseph Spencer Joseph Spencer (= 1×) peers C.A. Cortés-Escobedo

Countries citing papers authored by Joseph Spencer

Since Specialization

Citations

This map shows the geographic impact of Joseph Spencer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Joseph Spencer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Joseph Spencer more than expected).

Fields of papers citing papers by Joseph Spencer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Joseph Spencer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Joseph Spencer. The network helps show where Joseph Spencer may publish in the future.

Co-authorship network of co-authors of Joseph Spencer

This figure shows the co-authorship network connecting the top 25 collaborators of Joseph Spencer. A scholar is included among the top collaborators of Joseph Spencer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Joseph Spencer. Joseph Spencer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Spencer, Joseph, Yuan Qin, Alan G. Jacobs, et al.. (2025). Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability. SHILAP Revista de lepidopterología. 1(1). 1 indexed citations

Qin, Yuan, Matthew Porter, Joseph Spencer, et al.. (2025). Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025). Advanced Electronic Materials. 11(1).

Jacobs, Alan G., Boris N. Feigelson, James Spencer Lundh, et al.. (2024). Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN. physica status solidi (a). 221(21). 1 indexed citations

Lundh, James Spencer, Tatyana I. Feygelson, Kohei Sasaki, et al.. (2024). Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond. Applied Physics Letters. 124(15). 9 indexed citations

Qin, Yuan, Hehe Gong, Alan G. Jacobs, et al.. (2024). 10 kV, 250°C Operational, Enhancement-Mode Ga₂O₃ JFET with Charge-Balance and Hybrid-Drain Designs. 1–4. 6 indexed citations

Spencer, Joseph, Alan G. Jacobs, Karl D. Hobart, et al.. (2024). PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates. Journal of Electronic Materials. 53(6). 2798–2805. 2 indexed citations

Lundh, James Spencer, Cory D. Cress, Alan G. Jacobs, et al.. (2024). Electrothermal enhancement of β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer. Journal of Applied Physics. 136(22). 2 indexed citations

Thapa, Sunil, Sukgeun Choi, Zhuo Yang, et al.. (2023). Band structure, g-factor, and spin relaxation in n-type InAsP alloys. Physical review. B.. 108(11). 2 indexed citations

Porter, Matthew, Yuan Qin, Joseph Spencer, et al.. (2023). 1 kV Self-Aligned Vertical GaN Superjunction Diode. IEEE Electron Device Letters. 45(1). 12–15. 13 indexed citations

10.

Jacobs, Alan G., Joseph Spencer, Jennifer K. Hite, et al.. (2023). Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation. physica status solidi (a). 220(16). 4 indexed citations

11.

Qin, Yuan, Ming Xiao, Matthew Porter, et al.. (2023). 10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C. IEEE Electron Device Letters. 44(8). 1268–1271. 57 indexed citations

12.

Li, Jian-Sian, Chao-Ching Chiang, Xinyi Xia, et al.. (2023). NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(3). 8 indexed citations

13.

Qin, Yuan, Matthew Porter, Joseph Spencer, et al.. (2023). Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices. Advanced Electronic Materials. 11(1). 24 indexed citations

14.

Li, Jian-Sian, Chao-Ching Chiang, Xinyi Xia, et al.. (2023). (Invited) NiO/ β-(Al _x Ga_1-x)₂O₃ /Ga₂O₃ Heterojunction Lateral Rectifiers with Reverse Breakdown Voltage > 7kV. ECS Transactions. 111(2). 85–96. 4 indexed citations

15.

Li, Jian-Sian, Chao-Ching Chiang, Xinyi Xia, et al.. (2023). Operation of NiO/β-(Al_0.21Ga_0.79)₂O₃/Ga₂O₃ Heterojunction Lateral Rectifiers at up to 225 °C. ECS Journal of Solid State Science and Technology. 12(7). 75008–75008. 4 indexed citations

16.

Jacobs, Alan G., Boris N. Feigelson, Joseph Spencer, et al.. (2023). Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices. Crystals. 13(5). 736–736. 2 indexed citations

17.

Qin, Yuan, Joseph Spencer, James Spencer Lundh, et al.. (2023). Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective. Journal of Physics D Applied Physics. 56(9). 93001–93001. 86 indexed citations

18.

Spencer, Joseph, A. Mock, Alan G. Jacobs, et al.. (2022). A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3. Applied Physics Reviews. 9(1). 230 indexed citations breakdown →

19.

Wang, Boyan, Ming Xiao, Joseph Spencer, et al.. (2022). 2.5 kV Vertical Ga₂O₃ Schottky Rectifier With Graded Junction Termination Extension. IEEE Electron Device Letters. 44(2). 221–224. 85 indexed citations

20.

Lu, Guanyu, Christopher R. Gubbin, J. Ryan Nolen, et al.. (2021). Collective Phonon–Polaritonic Modes in Silicon Carbide Subarrays. ACS Nano. 16(1). 963–973. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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