Srinivasan Raghavan

5.5k citations

157 papers · 4.6k indexed · 1 hit paper · h-index 33

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Materials Chemistry top 1%
- 2D Materials and Applications
- Graphene research and applications
- ZnO doping and properties
- MXene and MAX Phase Materials

Papers in

Condensed Matter Physics 73
- GaN-based semiconductor devices and materials 72
Electronic, Optical and Magnetic Materials 42
- Ga2O3 and related materials 37

Co-authors: Joan M. Redwing Arindam Ghosh Gopalakrishnan Ramalingam Kallol Roy Srijit Goswami T. Phanindra Sai Medini Padmanabhan Digbijoy N. Nath
Journals: Journal of Applied Physics (17 papers)IEEE Transactions on Electron Devices (13 papers)Applied Physics Letters (9 papers)Semiconductor Science and Technology (8 papers)Journal of Crystal Growth (7 papers)
Partner nations: India United States United Kingdom

In The Last Decade

Srinivasan Raghavan

150 papers receiving 4.4k citations

Hit Papers

align trajectories log scale

Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices 2013 · 1.2k citations

Peers

Countries citing papers authored by Srinivasan Raghavan

Since Specialization

Citations

This map shows the geographic impact of Srinivasan Raghavan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Srinivasan Raghavan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Srinivasan Raghavan more than expected).

Fields of papers citing papers by Srinivasan Raghavan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Srinivasan Raghavan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Srinivasan Raghavan. The network helps show where Srinivasan Raghavan may publish in the future.

Co-authors

The 25 scholars most cited alongside Srinivasan Raghavan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Srinivasan Raghavan Line = papers co-authored together Srinivasan Raghavan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100) Nature Communications ·Shubham Kumar Parate, Sandeep Vura, Subhajit Pal, Upanya Khandelwal, Rama Satya Sandilya Ventrapragada, Rajeev Kumar, Sri Harsha Molleti, Vishnu Kumar, Girish V. Patil, Mudit Jain, Ambresh Mallya, Majid Ahmadi, Bart J. Kooi, Sushobhan Avasthi, Rajeev Ranjan, Srinivasan Raghavan, Saurabh A. Chandorkar, Pavan Nukala	2024	8
2	Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor physica status solidi (a) ·Anirudh Venugopalarao, Shantveer Kanta, Hareesh Chandrasekar, Aniruddhan Gowrisankar, Muralidharan R. Rengarajan, Digbijoy N. Nath, Srinivasan Raghavan	2024	3
3	Investigation of Optical functions, sub-bandgap transitions, and Urbach tail in the absorption spectra of Ga2O3 thin films deposited using mist-CVD Optical Materials ·Usman Ul Muazzam, R. Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath	2023	8
4	Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate Semiconductor Science and Technology ·Pramod Ravindra, Raghav Chaudhary, Eashwer Athresh, Sandeep Vura, Srinivasan Raghavan, Rajeev Ranjan, Kausik Majumdar, Sushobhan Avasthi	2021	2
5	Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress IEEE Transactions on Device and Materials Reliability ·Bhawani Shankar, Swati Shikha, Anant Singh, Jeevesh Kumar, Ankit Soni, Sayak Dutta Gupta, Srinivasan Raghavan, Mayank Shrivastava	2020	7
6	Distinct Failure Modes of AlGaN/GaN HEMTs Under ESD Conditions IEEE Transactions on Electron Devices ·Bhawani Shankar, Srinivasan Raghavan, Mayank Shrivastava	2020	22
7	Trap-Assisted and Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs IEEE Transactions on Device and Materials Reliability ·Bhawani Shankar, Ankit Soni, Srinivasan Raghavan, Mayank Shrivastava	2020	7
8	An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate Semiconductor Science and Technology ·Rohith Soman, Srinivasan Raghavan, Navakanta Bhat	2019	5
9	Selective Electron or Hole Conduction in Tungsten Diselenide (WSe₂) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering IEEE Transactions on Electron Devices ·Ansh Ansh, Jeevesh Kumar, Gaurav Sheoran, Ravikesh Mishra, Srinivasan Raghavan, Mayank Shrivastava	2019	9
10	Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering IEEE Transactions on Electron Devices ·Sayak Dutta Gupta, Ankit Soni, Vipin Joshi, Jeevesh Kumar, Rudrarup Sengupta, Heena Khand, Bhawani Shankar, Nagaboopathy Mohan, Srinivasan Raghavan, Navakanta Bhat, Mayank Shrivastava	2019	46
11	Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS ₂ /GaN and β -In ₂ Se ₃ /GaN Semiconductor Science and Technology ·Swanand V. Solanke, Shashwat Rathkanthiwar, Anisha Kalra, Roop K. Mech, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath	2019	16
12	Directed Microwave‐Assisted Self‐Assembly of Au–Graphene–Au Plasmonic Dimers for SERS Applications Advanced Materials Interfaces ·Priyadarshini Ghosh, Debadrita Paria, Krishna Balasubramanian, Ambarish Ghosh, N. Ravishankar, Srinivasan Raghavan	2019	23
13	ESD Behavior of AlGaN/GaN Schottky Diodes IEEE Transactions on Device and Materials Reliability ·Bhawani Shankar, Sayak Dutta Gupta, Ankit Soni, Srinivasan Raghavan, Mayank Shrivastava	2019	7
14	Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes Semiconductor Science and Technology ·Anisha Kalra, Shashwat Rathkanthiwar, R. Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath	2019	24
15	First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Bhawani Shankar, Ankit Soni, Hareesh Chandrasekar, Srinivasan Raghavan, Mayank Shrivastava	2019	15
16	Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model IEEE Transactions on Electron Devices ·Nayana Remesh, Nagaboopathy Mohan, Sandeep Kumar, Shreesha Prabhu, Ivor Guiney, C. J. Humphreys, Srinivasan Raghavan, R. Muralidharan, Digbijoy N. Nath	2018	16
17	Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer IEEE Transactions on Electron Devices ·Sandeep Kumar, Priti Gupta, Ivor Guiney, C. J. Humphreys, Srinivasan Raghavan, R. Muralidharan, Digbijoy N. Nath	2017	29
18	On the ESD behavior of AlGaN/GaN schottky diodes and trap assisted failure mechanism Bhawani Shankar, Rudrarup Sengupta, Sayak Dutta Gupta, Ankit Soni, Nagaboopathy Mohan, Navakanta Bhat, Srinivasan Raghavan, Mayank Shrivastava	2017	13
19	GaN and the 2014 Nobel Prize in Physics Current Science ·Srinivasan Raghavan	2014	1
20	The development of a cellular automaton-finite volume model for dendritic growth Applied Mathematical Modelling ·Matthew John M. Krane, David Johnson, Srinivasan Raghavan	2008	36

About Srinivasan Raghavan

Srinivasan Raghavan is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering and Mechanics of Materials, having authored 157 papers that have together received 4.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (72 papers), Semiconductor materials and devices (58 papers), Ga2O3 and related materials (37 papers), ZnO doping and properties (24 papers), Graphene research and applications (23 papers), Metal and Thin Film Mechanics (23 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Electronic and Structural Properties of Oxides (12 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Materials Chemistry (3.1k citations), Electronic, Optical and Magnetic Materials (1.2k citations), Ceramics and Composites (220 citations) and Electrical and Electronic Engineering (1.9k citations). Srinivasan Raghavan has collaborated with scholars based in India, United States and United Kingdom. Frequent co-authors include Joan M. Redwing, Arindam Ghosh, Gopalakrishnan Ramalingam, Kallol Roy, Srijit Goswami, T. Phanindra Sai, Medini Padmanabhan, Digbijoy N. Nath, Merrilea J. Mayo and R. Muralidharan. Their work appears in journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices, Applied Physics Letters, Semiconductor Science and Technology and Journal of Crystal Growth.

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