R. Nieh

2.8k total citations · 1 hit paper
43 papers, 2.3k citations indexed

About

R. Nieh is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, R. Nieh has authored 43 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in R. Nieh's work include Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Ferroelectric and Negative Capacitance Devices (19 papers). R. Nieh is often cited by papers focused on Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Ferroelectric and Negative Capacitance Devices (19 papers). R. Nieh collaborates with scholars based in United States. R. Nieh's co-authors include Byoung Hun Lee, Laegu Kang, Jack C. Lee, Sundararaman Gopalan, J.C. Lee, Rino Choi, Yongjoo Jeon, Chang Seok Kang, K. Onishi and Wenjie Qi and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of The Electrochemical Society.

In The Last Decade

R. Nieh

43 papers receiving 2.2k citations

Hit Papers

Thermal stability and electrical characteristics of ultra... 2000 2026 2008 2017 2000 100 200 300 400 500
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
    2000 523 citations Byoung Hun Lee, Laegu Kang et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Nieh United States 23 2.2k 779 237 235 82 43 2.3k
B. Balland France 13 905 0.4× 440 0.6× 187 0.8× 191 0.8× 76 0.9× 71 1.1k
Laegu Kang United States 12 1.3k 0.6× 509 0.7× 149 0.6× 146 0.6× 31 0.4× 27 1.3k
R. Gregory United States 18 988 0.5× 542 0.7× 164 0.7× 162 0.7× 86 1.0× 46 1.1k
K. J. Hubbard United States 5 976 0.4× 678 0.9× 187 0.8× 188 0.8× 27 0.3× 6 1.1k
V. V. Afanas’ev Belgium 16 1.3k 0.6× 861 1.1× 509 2.1× 147 0.6× 29 0.4× 48 1.6k
Y. Panayiotatos Greece 22 878 0.4× 816 1.0× 329 1.4× 114 0.5× 214 2.6× 63 1.3k
Rama I. Hegde United States 15 809 0.4× 436 0.6× 109 0.5× 126 0.5× 133 1.6× 34 935
G. B. Rayner United States 17 908 0.4× 676 0.9× 182 0.8× 122 0.5× 46 0.6× 35 1.1k
Shin’ichiro Kimura Japan 19 980 0.4× 462 0.6× 97 0.4× 185 0.8× 93 1.1× 47 1.1k
Edmund P. Burte Germany 16 812 0.4× 346 0.4× 154 0.6× 144 0.6× 77 0.9× 132 971

Countries citing papers authored by R. Nieh

Since Specialization
Citations

This map shows the geographic impact of R. Nieh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Nieh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Nieh more than expected).

Fields of papers citing papers by R. Nieh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Nieh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Nieh. The network helps show where R. Nieh may publish in the future.

Co-authorship network of co-authors of R. Nieh

This figure shows the co-authorship network connecting the top 25 collaborators of R. Nieh. A scholar is included among the top collaborators of R. Nieh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Nieh. R. Nieh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Choi, Rino, K. Onishi, R. Nieh, et al.. (2003). High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode. 193–194. 1 indexed citations
3.
Qi, Wenjie, R. Nieh, Byoung Hun Lee, et al.. (2003). MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si. 145–148. 40 indexed citations
4.
Nieh, R., S. Krishnan, Hag‐Ju Cho, et al.. (2003). Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices. 186–187. 12 indexed citations
5.
Onishi, K., Chang Seok Kang, Rino Choi, et al.. (2003). Effects of high-temperature forming gas anneal on HfO/sub 2/ MOSFET performance. 22–23. 15 indexed citations
6.
Edwards, N. V., D. Roan, R. Gregory, et al.. (2003). HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium. Journal of The Electrochemical Society. 150(4). F67–F67. 53 indexed citations
7.
Onishi, K., Chang Seok Kang, Rino Choi, et al.. (2003). Hard and soft-breakdown characteristics of ultra-thin HfO/sub 2/ under dynamic and constant voltage stress. 629–632. 14 indexed citations
8.
9.
Onishi, K., Chang Seok Kang, Rino Choi, et al.. (2003). Charging effects on reliability of HfO/sub 2/ devices with polysilicon gate electrode. 419–420. 4 indexed citations
10.
Kang, Laegu, K. Onishi, Byoung Hun Lee, et al.. (2002). MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics. 35–38. 47 indexed citations
11.
Qi, Wenjie, R. Nieh, Byoung Hun Lee, et al.. (2002). Temperature effect on the reliability of ZrO/sub 2/ gate dielectric deposited directly on silicon. 72–76. 2 indexed citations
12.
Kang, Chang Seok, K. Onishi, Sundararaman Gopalan, et al.. (2002). Structural and electrical properties of HfO2 with top nitrogen incorporated layer. IEEE Electron Device Letters. 23(5). 249–251. 45 indexed citations
13.
Qi, Wenjie, R. Nieh, Byoung Hun Lee, et al.. (2002). Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics. 40–41. 17 indexed citations
14.
Nieh, R., et al.. (2000). Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application. Applied Physics Letters. 77(20). 3269–3271. 150 indexed citations
15.
Kang, Laegu, Byoung Hun Lee, Wenjie Qi, et al.. (2000). Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric. IEEE Electron Device Letters. 21(4). 181–183. 202 indexed citations
16.
Nieh, R., Byoung Hun Lee, Yongjoo Jeon, et al.. (2000). Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application. Applied Physics Letters. 77(11). 1704–1706. 88 indexed citations
17.
Busch, B., W.H. Schulte, Eric Garfunkel, et al.. (2000). Oxygen exchange and transport in thin zirconia films on Si(100). Physical review. B, Condensed matter. 62(20). R13290–R13293. 122 indexed citations
18.
Kang, Laegu, Byoung-Hun Lee, Wenjie Qi, et al.. (1999). Highly Reliable Thin Hafnium Oxide Gate Dielectric. MRS Proceedings. 592. 11 indexed citations
19.
Nieh, R., et al.. (1999). Study on ZrO2 Deposited Directly on Si as an Alternative Gate Dielectric Material. MRS Proceedings. 606. 2 indexed citations
20.
Lee, Byoung H., R. Nieh, Laegu Kang, et al.. (1999). High-K gate dielectrics. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3881. 24–24. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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